公开(公告)号：US20150340540A1

公开(公告)日：2015-11-26

申请号：US14156521

申请日：2014-01-16

Applicant: Massachusetts Institute of Technology ,  1366 Technologies, Inc.

Inventor： Benjamin F. Polito ,  Holly G. Gates ,  Emanuel M. Sachs

IPC: H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

Abstract translation: 用于光伏和其他用途的图案化基板是通过将柔性印模压在覆盖诸如晶片的基底的抗蚀剂材料薄层上而制成的。 抗蚀剂改变相位或变得可流动，从印模的位置流出，露出经受一些成形过程的基底。 典型的基底是硅，典型的抗蚀剂是蜡。 工件纹理包括延伸凹槽，离散的，间隔开的凹坑，以及它们的组合和中间体。 可以使用压板或旋转图案形成装置。 粗糙和不规则的工件衬底可以由延长的印模元件容纳。 抗蚀剂可以首先施加到工件，印模或基本上同时地在离散的位置，或者在两者的整个表面上。 抗蚀剂在需要时完全将基材脱模。

公开(公告)号：US20140220171A1

公开(公告)日：2014-08-07

申请号：US14250581

申请日：2014-04-11

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G.D. Stephen Hudelson ,  Ralf Jonczyk

IPC: B29C33/44

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 可以在模板上施加压力差，并且在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的松弛可以允许晶片的释放。 模具片可以比熔体更冷。 通过成形晶片的厚度提取热量。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板可以允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：WO2019083956A1

公开(公告)日：2019-05-02

申请号：PCT/US2018/057031

申请日：2018-10-23

Applicant: 1366 TECHNOLOGIES INC.

Inventor： STEEMAN, Robertus Antonius

IPC: H01L21/677 ,  H01L21/68 ,  H01L21/78 ,  H01L21/67 ,  H01L21/683 ,  B25B11/00

Abstract: A semiconductor wafer is as wide as the industry standard width A (presently 156 mm +/- 1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption. Modules may be composed of a plurality of such larger wafers. Such wafers can be processed in conventional processing equipment that has a wafer retaining portion of industry standard size A and a configuration that also accommodates a wafer with a perpendicular second edge longer than A by at least 1 and typically 3-20 mm. Wet bench carriers and transport and inspection stations can be so used.

公开(公告)号：WO2015167826A1

公开(公告)日：2015-11-05

申请号：PCT/US2015/026389

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： SACHS, Emanuel, M. ,  JONCZYK, Ralf ,  LORENZ, Adam, L. ,  WALLACE, Richard, L. ,  HUDELSON, Stephen George, D.

IPC: H01L31/0236

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180 - 250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6 x 10 17 atoms/cc, preferably less than 2 x 10 17 , total oxygen less than 8. 75 x 10 17 atoms/cc, preferably less than 5. 25 x 10 17 . Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

Abstract translation: 半导体晶片在受控位置具有较薄和较厚的区域可能适用于光伏发电。 内部可以小于180微米或更薄，至50微米，较厚部分为180-250微米。 薄晶圆具有更高的效率。 较厚的周长提供处理强度。 较厚的条纹，着陆和岛屿用于金属化耦合。 晶片可以直接从熔体制成模板，其中不同热提取倾向的区域布置成对应于相对厚度的位置。 间隙氧小于6×1017原子/立方厘米，优选小于2×1017，小于8.75×10 17原子/立方厘米，优选小于5.25×1017的总氧。较大的区域形成相对较高的相邻模板区域 热提取倾向; 较薄的区域具有较小的提取倾向。 较厚的模板区域具有较高的提取倾向。 模板上的功能材料也具有不同的提取倾向。

公开(公告)号：WO2013056059A2

公开(公告)日：2013-04-18

申请号：PCT/US2012/059967

申请日：2012-10-12

Applicant: 1366 TECHNOLOGIES INC.

Inventor： DANNER, Guy, M. ,  GATES, Holly, G. ,  TARASOV, Vladimir, S. ,  KANE, Peter, E. ,  MADDEN, Peter, G. ,  SACHS, Emanuel, M.

IPC: B05D1/06

CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B12/16 ,  B05B13/02 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

Abstract translation: 本发明涉及在基材上形成薄聚合物膜。 描述了用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了将固体抗蚀剂转化为小颗粒气溶胶的装置，通过加热抗蚀剂以形成与雾化相容的低粘度液体，并应用喷射或冲击雾化和气溶胶颗粒尺寸的技术以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒的方法，并且使用充电装置的进展建立了将带电粒子流引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。

公开(公告)号：WO2013028802A1

公开(公告)日：2013-02-28

申请号：PCT/US2012/051939

申请日：2012-08-22

Applicant: 1366 TECHNOLOGIES INC ,  STERN, Eric ,  WEST, Bradley, M. ,  CRISCIONE, Jason

Inventor： STERN, Eric ,  WEST, Bradley, M. ,  CRISCIONE, Jason

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L31/02366 ,  C09K13/08 ,  H01L31/02363 ,  Y02E10/50

Abstract: Acid etch compositions for etching multicrystalline silicon substrates are disclosed which may include hydrofluoric acid, an oxidizer, an acid diluent, and soluble silicon. The soluble silicon may be hexafluorosilicic acid or ammonium fluorosilicate. Silicon substrates patterned with organic resist may be used with the acid etch compositions for selective silicon patterning for solar cell applications.

Abstract translation: 公开了用于蚀刻多晶硅衬底的酸蚀组合物，其可以包括氢氟酸，氧化剂，酸稀释剂和可溶性硅。 可溶性硅可以是六氟硅酸或氟硅酸铵。 用有机抗蚀剂图案化的硅衬底可以与用于太阳能电池应用的选择性硅图案化的酸蚀组合物一起使用。

公开(公告)号：WO2010104838A1

公开(公告)日：2010-09-16

申请号：PCT/US2010/026639

申请日：2010-03-09

Applicant: 1366 TECHNOLOGIES INC. ,  SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

Inventor： SACHS, Emanuel, M. ,  WALLACE, Richard, L. ,  HANTSOO, Eerik, T. ,  LORENZ, Adam, M. ,  HUDELSON, G. D., Stephen ,  JONCZYK, Ralf

IPC: C30B15/00 ,  C03B19/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 在模板上施加压差，并在其上形成半导体（例如硅）晶片。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：WO2016122731A1

公开(公告)日：2016-08-04

申请号：PCT/US2015/055460

申请日：2015-10-14

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： JONCZYK, Ralf ,  KERNAN, Brian, D. ,  HUDELSON, Stephen, G.D. ,  LORENZ, Adam, M. ,  SACHS, Emanuel, M.

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  H01L21/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Abstract translation: 在包含掺杂剂的模具上形成半导体晶片。 掺杂剂掺杂与模具相邻的熔融区域。 那里，掺杂剂浓度高于熔体体积。 晶片开始凝固。 掺杂剂在固体半导体中扩散不良。 晶圆开始凝固后，掺杂剂不能进入熔体。 之后，与晶片表面相邻的熔体中的掺杂剂浓度小于晶片开始形成时的浓度。 新的晶片区域从其掺杂浓度随时间减少的熔融区域生长。 这在晶片中建立了掺杂剂梯度，在模具附近具有较高的浓度。 渐变可以定制。 梯度产生可用作漂移或背表面场的场。 太阳能集热器可以在后表面具有开放的栅格导体和更好的光学反射器，这可以通过固有的背面场来实现。

公开(公告)号：WO2013103930A3

公开(公告)日：2015-06-11

申请号：PCT/US2013020435

申请日：2013-01-06

Applicant: 1366 TECHNOLOGIES INC

Inventor： TARASOV VLADIMIR ,  ERSEN ALI ,  STERN ERIC ,  CRISCIONE JASON M ,  SACHS EMANUEL M

IPC: H01L21/00

CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

Abstract: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.

Abstract translation: 通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。 光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。 修改也可以通过在腔体特征的底部选择性地添加材料。 不同类型的相同晶片中的特征可以被不同地对待。 有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。 有些可能会加深，有些粗糙，有的两个。 不需要对准以选择性地实现。 掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。

公开(公告)号：WO2013056059A3

公开(公告)日：2014-06-19

申请号：PCT/US2012059967

申请日：2012-10-12

Applicant: 1366 TECHNOLOGIES INC

Inventor： DANNER GUY M ,  GATES HOLLY G ,  TARASOV VLADIMIR S ,  KANE PETER E ,  MADDEN PETER G ,  SACHS EMANUEL M

IPC: C23C18/14

CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B13/02 ,  B05B15/04 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

Abstract: A thin polymer film is formed on a substrate. An apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. An apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid; the liquid being suitable for jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices, establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

Abstract translation: 在基板上形成薄的聚合物膜。 描述了一种用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了通过加热抗蚀剂以将固体抗蚀剂转化成小颗粒的气溶胶以形成低粘度液体的装置; 该液体适用于喷射或冲击雾化和气溶胶颗粒尺寸以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒并使用充电装置的进展的方法，建立了将带电粒子的流动引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。