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    도전막 매립형 기판, 그 형성 방법, 및 이를 이용하는 반도체 소자의 제조 방법
    31.
    发明公开
    도전막 매립형 기판, 그 형성 방법, 및 이를 이용하는 반도체 소자의 제조 방법 无效
    基板具有导电层及其形成方法，以及使用其的半导体器件的制造方法

    公开(公告)号：KR1020120020526A

    公开(公告)日：2012-03-08

    申请号：KR1020100084182

    申请日：2010-08-30

    Applicant: 삼성전자주식회사

    Inventor： 강필규 ,  최길현 ,  배대록 ,  박병률 ,  이동각

    IPC: H01L27/12 ,  H01L21/20

    CPC classification number: H01L29/66666 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/1203

    Abstract: PURPOSE: A conductive film buried type substrate, a formation method thereof, and a manufacturing method of a semiconductor device using the same are provided to include an adhesion improvement film between a silicon oxide film and a conductive film, thereby significantly improving adhesive properties between the silicon oxide film and the conductive film. CONSTITUTION: A silicon oxide film(108) is attached on a support substrate(150). A conductive film(106b) is arranged on the silicon oxide film. An adhesion improvement film(107b) is arranged between the silicon oxide film and the conductive film. A mono-crystalline semiconductor film is arranged on the conductive film. A conductive film buried type substrate is arranged by attaching the silicon oxide film and the support substrate.

    Abstract translation: 目的：提供一种导电膜掩埋型基板及其形成方法以及使用其的半导体器件的制造方法，其包括在氧化硅膜和导电膜之间的粘合改善膜，从而显着改善 氧化硅膜和导电膜。 构成：氧化硅膜（108）附着在支撑衬底（150）上。 导电膜（106b）布置在氧化硅膜上。 在氧化硅膜和导电膜之间配置粘接改善膜（107b）。 在导电膜上设置单晶半导体膜。 通过安装氧化硅膜和支撑衬底来布置导电膜掩埋型衬底。

    광검출기 구조체 형성방법
    32.
    发明公开
    광검출기 구조체 형성방법 有权
    制造光电转换器结构的方法

    公开(公告)号：KR1020120011117A

    公开(公告)日：2012-02-07

    申请号：KR1020100072688

    申请日：2010-07-28

    Applicant: 삼성전자주식회사

    Inventor： 지호철 ,  나경원 ,  하경호 ,  강필규

    IPC: H01L31/10

    CPC classification number: G02B6/12004 ,  G02B6/132 ,  G02B6/136 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

    Abstract: PURPOSE: A method for forming a photodetector structure is provided to obtain a germanium layer having impoved optical absorption by using bulk silicon as a crystallization seed for a germanium layer. CONSTITUTION: A structural layer filling a cladding material is formed inside a trench(S110). A monocrystalline silicon layer is formed at an upper part of a structural layer(S120). The monocrystalline silicon layer is etched(S130). A first insulation layer is formed on a top portion of the monocrystalline silicon layer(S140). A part of the first insulation layer is etched(S150). A germanium layer is formed at the upper part of the first insulation layer(S160). An electrode is connected to the germanium layer(S170).

    Abstract translation: 目的：提供一种形成光检测器结构的方法，通过使用体硅作为锗层的结晶种子来获得具有光吸收的锗层。 构成：在沟槽内形成填充包层材料的结构层（S110）。 在结构层的上部形成单晶硅层（S120）。 蚀刻单晶硅层（S130）。 第一绝缘层形成在单晶硅层的顶部（S140）上。 蚀刻第一绝缘层的一部分（S150）。 锗层形成在第一绝缘层的上部（S160）。 电极连接到锗层（S170）。

    ＬＥＧ 공정을 이용하여 벌크 실리콘 웨이퍼의 필요한 영역내에 ＳＯⅠ층을 형성하는 반도체 소자의 제조방법
    33.
    发明公开
    ＬＥＧ 공정을 이용하여 벌크 실리콘 웨이퍼의 필요한 영역내에 ＳＯⅠ층을 형성하는 반도체 소자의 제조방법 有权
    使用LEG过程制造在需要的块状硅膜区域中的SOI层的半导体器件的方法

    公开(公告)号：KR1020110113462A

    公开(公告)日：2011-10-17

    申请号：KR1020100032863

    申请日：2010-04-09

    Applicant: 삼성전자주식회사

    Inventor： 강필규 ,  배대록 ,  최길현 ,  이종명

    IPC: H01L21/20

    CPC classification number: H01L21/02381 ,  G02B6/13 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02675

    Abstract: 벌크 실리콘 웨이퍼 상에 SOI 층을 형성하는 것을 포함하는 반도체 소자의 제조방법이 제공된다. 본 발명의 기술적 사상에 의한 반도체 소자의 제조방법은, 벌크 실리콘 웨이퍼에 SOI 층을 형성하되, 상기 SOI 층에는 제1비정질 실리콘이 절연층 상에 부분적으로 형성되며, 상기 제1비정질 실리콘층을 녹이는 1차 어닐링 공정을 수행하고, 상기 제1비정질 실리콘층은 에피택셜 성장함으로써, 단결정 실리콘층과 다결정 실리콘층으로 전환되며, 상기 다결정 실리콘층을 제2비정질 실리콘층으로 대체하며, 상기 제2비정질 실리콘층을 녹이는 2차 어닐링 공정을 수행하고, 상기 제2비정질 실리콘층은 에피택셜 성장함으로써, 단결정 실리콘층으로 전환되는 것으로 구성될 수 있다.

    반도체 장치의 제조방법
    34.
    发明公开
    반도체 장치의 제조방법 有权
    半导体器件制造方法

    公开(公告)号：KR1020090038974A

    公开(公告)日：2009-04-22

    申请号：KR1020070104314

    申请日：2007-10-17

    Applicant: 삼성전자주식회사

    Inventor： 강필규 ,  손용훈 ,  이종욱

    IPC: H01L21/265 ,  H01L21/268

    CPC classification number: H01L21/02532 ,  H01L21/02636 ,  H01L21/02675

    Abstract: A manufacturing method of a semiconductor device is provided to increase a heat flow speed through a seed in a melting process using a laser beam by performing an ion injection process before converting an amorphous silicone film into a single crystal silicone film. A seed film(10) including silicone material is formed by a selective epitaxial growth. An amorphous silicone film including amorphous silicone material is formed on a top of the seed film. The amorphous silicone film is formed by a chemical vapor deposition. A dopant is doped in the amorphous silicone film by performing an ion injection process. A laser beam is irradiated on the amorphous silicone film. The amorphous silicone film is mono-crystallized by the laser beam. A single crystal silicone film(30) is formed through a mono-crystallization of the amorphous silicone film.

    Abstract translation: 提供一种半导体器件的制造方法，用于通过在将非晶硅膜转换为单晶硅酮膜之前执行离子注入工艺，在使用激光束的熔化过程中增加通过种子的热流速度。 通过选择性外延生长形成包括硅酮材料的种子膜（10）。 在种子膜的顶部形成包含无定形硅酮材料的非晶硅膜。 无定形硅氧烷膜通过化学气相沉积形成。 通过进行离子注入工艺，在无定形硅酮膜中掺杂掺杂剂。 将激光束照射在非晶硅膜上。 无定形硅胶膜由激光束单晶化。 通过无定形硅酮膜的单结晶形成单晶硅酮薄膜（30）。

    반도체 메모리 소자의 제조 방법
    35.
    发明授权
    반도체 메모리 소자의 제조 방법 失效
    반도체메모리소자의제조방법

    公开(公告)号：KR100875953B1

    公开(公告)日：2008-12-26

    申请号：KR1020070056578

    申请日：2007-06-11

    Applicant: 삼성전자주식회사

    Inventor： 손용훈 ,  최시영 ,  이종욱 ,  강필규

    IPC: H01L21/20

    Abstract: A manufacturing method of a memory device is provided to increase the reliability of the semiconductor device by applying the stack architecture to the formation of the channel layer. A manufacturing method of the semiconductor memory device comprises the following steps: the step for forming the seed film(128) including the single crystal material within the first opening(126) of the first insulating layer pattern(124) formed on the single crystal substrate(120); the step for forming the first amorphous thin film with uniform thickness including the amorphous material on the first insulating layer pattern and the seed film; the step for obtaining the primary channel layer(140) including the single crystal thin film by phase-transforming the first amorphous thin film; the step for forming the second insulating layer pattern(142) including the second opening which exposes the surface of the primary channel layer, if the defect exists in the primary channel layer; the step for forming the second amorphous thin film burying the second opening.

    Abstract translation: 提供了一种存储器件的制造方法，以通过将堆叠体系结构应用于沟道层的形成来提高半导体器件的可靠性。 该半导体存储器件的制造方法包括以下步骤：在形成于单晶衬底上的第一绝缘层图案（124）的第一开口（126）内形成包括单晶材料的籽晶膜（128）的步骤 （120）; 在第一绝缘层图案和籽晶膜上形成包括非晶材料的厚度均匀的第一非晶薄膜的步骤; 通过对第一非晶态薄膜进行相变来获得包括单晶薄膜的主沟道层（140）的步骤; 如果所述主沟道层中存在所述缺陷，则形成包括暴露所述主沟道层的表面的所述第二开口的所述第二绝缘层图案（142）的步骤; 形成掩埋第二开口的第二非晶薄膜的步骤。

    반도체 메모리 소자의 제조 방법
    36.
    发明公开
    반도체 메모리 소자의 제조 방법 失效
    制造半导体存储器件的方法

    公开(公告)号：KR1020080108695A

    公开(公告)日：2008-12-16

    申请号：KR1020070056578

    申请日：2007-06-11

    Applicant: 삼성전자주식회사

    Inventor： 손용훈 ,  최시영 ,  이종욱 ,  강필규

    IPC: H01L21/20

    Abstract: A manufacturing method of a memory device is provided to increase the reliability of the semiconductor device by applying the stack architecture to the formation of the channel layer. A manufacturing method of the semiconductor memory device comprises the following steps: the step for forming the seed film(128) including the single crystal material within the first opening(126) of the first insulating layer pattern(124) formed on the single crystal substrate(120); the step for forming the first amorphous thin film with uniform thickness including the amorphous material on the first insulating layer pattern and the seed film; the step for obtaining the primary channel layer(140) including the single crystal thin film by phase-transforming the first amorphous thin film; the step for forming the second insulating layer pattern(142) including the second opening which exposes the surface of the primary channel layer, if the defect exists in the primary channel layer; the step for forming the second amorphous thin film burying the second opening.

    Abstract translation: 提供了一种存储器件的制造方法，以通过将叠层结构应用到沟道层的形成来提高半导体器件的可靠性。 半导体存储器件的制造方法包括以下步骤：在形成在单晶衬底上的第一绝缘层图案（124）的第一开口（126）内形成包括单晶材料的种子膜（128）的步骤 （120）; 用于在第一绝缘层图案和种子膜上形成包括非晶材料的均匀厚度的第一非晶薄膜的步骤; 用于通过相变第一非晶薄膜来获得包括单晶薄膜的主沟道层（140）的步骤; 如果在第一通道层中存在缺陷，则形成包括第二开口的第二绝缘层图案（142）的步骤，其暴露主沟道层的表面; 用于形成掩埋第二开口的第二非晶薄膜的步骤。

    반도체 장치 및 반도체 장치의 제조 방법
    37.
    发明授权
    반도체 장치 및 반도체 장치의 제조 방법 失效
    半导体器件及其制造方法

    公开(公告)号：KR100803694B1

    公开(公告)日：2008-02-20

    申请号：KR1020070007779

    申请日：2007-01-25

    Applicant: 삼성전자주식회사

    Inventor： 강필규 ,  손용훈 ,  최시영 ,  이병찬 ,  이종욱 ,  정인수

    IPC: H01L29/786

    CPC classification number: H01L21/2022 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/8221

    Abstract: A semiconductor device and a fabricating method thereof are provided to prevent a defect portion from being transferred to an upper layer by forming a silicon-germanium protective layer pattern on the defect portion. A first insulation layer pattern(220) is formed on a first single crystal layer(210), and has an opening partially exposing a surface of the first single crystal layer. A seed layer(230) is formed by selective epitaxial growth in a structure to be buried at the opening. A second single crystal layer(250) is formed on the substrate comprising the seed layer by irradiating a laser beam onto a first polycrystal layer. A first protective layer(260) is formed on a defect portion produced when the second single crystal layer is formed. A third single crystal layer(270) is formed on the first protective layer.

    Abstract translation: 提供半导体器件及其制造方法，以通过在缺陷部分上形成硅 - 锗保护层图案来防止缺陷部分转移到上层。 第一绝缘层图案（220）形成在第一单晶层（210）上，并且具有部分地暴露第一单晶层的表面的开口。 种子层（230）通过选择性外延生长形成在待掩埋在开口处的结构中。 通过将激光束照射到第一多晶层上，在包括种子层的基板上形成第二单晶层（250）。 第一保护层（260）形成在形成第二单晶层时产生的缺陷部分上。 在第一保护层上形成第三单晶层（270）。

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