公开(公告)号：KR1020090079426A

公开(公告)日：2009-07-22

申请号：KR1020080005380

申请日：2008-01-17

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  김언정 ,  배은주 ,  이은홍

IPC: B82B3/00

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01L51/0013 ,  H01L51/0048 ,  H01L51/0508

Abstract: A method for transferring carbon nanotubes is provided to secure the carbon nanotubes with desired length, position and direction transferred on a substrate. A method for transferring carbon nanotubes comprises: the first step of forming the carbon nanotubes(18) on the first substrate(10) in a vertical direction; the second step of preparing the second substrate(30) on which the carbon nanotubes are to be transferred; the third step of aligning the first substrate on the second substrate so that the carbon nanotubes face the second substrate; and the fourth step of pressurizing the second substrate toward the first substrate in order to transfer the carbon nanotubes onto the second substrate.

Abstract translation: 提供了一种用于转移碳纳米管的方法，以将所需长度，位置和方向的碳纳米管固定在基底上。 一种转移碳纳米管的方法包括：在垂直方向上在第一衬底（10）上形成碳纳米管（18）的第一步骤; 制备在其上转移碳纳米管的第二基板（30）的第二步骤; 将第一基板对准第二基板以使碳纳米管面对第二基板的第三步骤; 以及将第二基板朝向第一基板加压以将碳纳米管转移到第二基板上的第四步骤。

公开(公告)号：KR1020070089369A

公开(公告)日：2007-08-31

申请号：KR1020060019301

申请日：2006-02-28

Applicant: 삼성전자주식회사

Inventor： 설광수 ,  최성재 ,  최재영 ,  민요셉 ,  장은주 ,  이동기

IPC: H01L21/336

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/51 ,  H01L29/513 ,  H01L29/7881 ,  Y10S977/721 ,  Y10S977/785 ,  Y10S977/943

Abstract: A memory device with a nano crystal and a manufacturing method thereof are provided to improve controllability of device characteristics and to enhance the device characteristics by arranging uniformly nano crystals using a tunneling oxide layer structure for introducing an aminosilane layer. A memory device with a nano crystal includes a substrate(11), source and drain regions(13,15) spaced apart from each other in the substrate, a memory cell, and a control gate. The memory cell(22) is formed on the substrate in order to connect the source and drain regions with each other. The memory cell contains a plurality of nano crystals. The control gate(17) is formed on the memory cell. The memory cell includes a first tunneling oxide layer(21) on the substrate, a second tunneling oxide layer(23) on the first tunneling oxide layer, and a control oxide layer(25) on the second tunneling oxide layer. An aminosilane layer is additionally formed on the second tunneling oxide layer.

Abstract translation: 提供具有纳米晶体的存储器件及其制造方法，以通过使用用于引入氨基硅烷层的隧穿氧化物层结构来均匀地布置纳米晶体来提高器件特性的可控性并提高器件特性。 具有纳米晶体的存储器件包括衬底（11），在衬底中彼此间隔开的源极和漏极区域（13,15），存储器单元和控制栅极。 存储单元（22）形成在基板上，以便将源区和漏区彼此连接。 存储单元包含多个纳米晶体。 控制栅极（17）形成在存储单元上。 所述存储单元包括在所述衬底上的第一隧道氧化物层（21），所述第一隧道氧化物层上的第二隧道氧化物层（23）和所述第二隧穿氧化物层上的控制氧化物层（25）。 另外在第二隧道氧化物层上形成氨基硅烷层。

公开(公告)号：KR1020070072726A

公开(公告)日：2007-07-05

申请号：KR1020060000164

申请日：2006-01-02

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  배은주 ,  박완준

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: C01G9/02 ,  B82Y30/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/64 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/811

Abstract: A method for manufacturing zinc oxide(ZnO) nano-wires comprising formation of ZnO seed layer is provided to produce the nano-wires with smaller diameter than typical nano-wires and high density by forming the ZnO seed layer containing a large amount of hydroxyl groups then growing the nano-wires on the seed layer. The method comprises the steps of: forming a ZnO seed layer(2) containing more than 50% of hydroxyl groups on a substrate(1); and growing ZnO nano-wires on the ZnO seed layer. The ZnO seed layer is ZnO seed film formed by vaporizing Zn raw material and an oxidation raw material prepared of H2O or H2O2. The ZnO seed layer is prepared by forming the ZnO seed film on the substrate then surface treating the surface of the ZnO seed film with hydroxyl group containing material. The surface treatment is performed by reacting the ZnO seed film in a water solution containing hydroxyl groups.

Abstract translation: 提供了一种制造包含ZnO种子层形成的氧化锌（ZnO）纳米线的方法，以通过形成含有大量羟基的ZnO种子层来制造具有比典型纳米线更小的直径和高密度的纳米线 然后在种子层上生长纳米线。 该方法包括以下步骤：在衬底（1）上形成含有多于50％的羟基的ZnO种子层（2）; 并在ZnO种子层上生长ZnO纳米线。 ZnO种子层是通过蒸发Zn原料和由H 2 O或H 2 O 2制备的氧化原料形成的ZnO种子膜。 通过在衬底上形成ZnO种子膜，然后用含羟基的材料对ZnO种子膜的表面进行表面处理来制备ZnO种子层。 表面处理通过使ZnO种子膜在含有羟基的水溶液中反应来进行。

公开(公告)号：KR1020070000683A

公开(公告)日：2007-01-03

申请号：KR1020050056228

申请日：2005-06-28

Applicant: 삼성전자주식회사

Inventor： 배은주 ,  민요셉 ,  박완준

IPC: B82B3/00 ,  B82B1/00 ,  C01B31/02

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/17 ,  H01J2201/30469 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/845

Abstract: A method of selectively removing carbonaceous impurities from sulfur combined CNT is provided to eliminate amorphous carbon fraction from CNT under vacuum condition in sealed space by sulfidation of carbon impurities from the CNT synthesized in a semiconductor device. The method comprises: a first step of preparing sulfur and carbon nano-tube in a closed space; and a second step of removing impurities adhered to the carbon nano-tube by sulfidation. The second step includes further a step of heating the impurities of the carbon nano-tube up to more than temperature of sulfidation. The heating step is performed by maintaining the closed space at about 300deg.C for more than 30 minutes. The second step includes further a step of vacuum formation in the closed space by completely exhausting air out of the space before the heating step. Alternatively, the method comprises: a first step of preparing a device containing sulfur and carbon nano-tube; and a second step of removing impurities on surface of the carbon nano-tube.

Abstract translation: 提供从硫组合CNT中选择性除去含碳杂质的方法，以在密封空间中通过在半导体器件中合成的CNT的碳杂质硫化来在真空条件下从CNT消除无定形碳馏分。 该方法包括：在封闭空间中制备硫和碳纳米管的第一步骤; 以及通过硫化除去粘附到碳纳米管上的杂质的第二步骤。 第二步还包括将碳纳米管的杂质加热至多于硫化温度的步骤。 加热步骤通过将封闭空间保持在约300℃下进行30多分钟。 第二步骤还包括通过在加热步骤之前将空气从空间中完全排出而在封闭空间中形成真空的步骤。 或者，该方法包括：制备含有硫和碳纳米管的装置的第一步骤; 以及除去碳纳米管表面上的杂质的第二步骤。

公开(公告)号：KR1020060091522A

公开(公告)日：2006-08-21

申请号：KR1020050012442

申请日：2005-02-15

Applicant: 삼성전자주식회사

Inventor： 민요셉 ,  조영진

IPC: H01L27/04 ,  H01L21/324 ,  H01L27/108

CPC classification number: C23C16/40 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31691 ,  H01L28/55

Abstract: An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for integration of the semiconductor device.

公开(公告)号：KR1020040103821A

公开(公告)日：2004-12-09

申请号：KR1020040085807

申请日：2004-10-26

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  민요셉 ,  조영진

IPC: H01L27/108 ,  H01L21/336 ,  H01L21/31

CPC classification number: H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  H01L28/40 ,  H01L29/517

Abstract: PURPOSE: A precursor for forming a hafnium oxide layer and a method for forming a hafnium oxide layer using the same are provided to perform a low-temperature deposition process and enhance a deposition speed by improving electrical characteristics. CONSTITUTION: A liquid precursor is formed by combining HfCl4 with a nitrogen compound and diluting the combined material within an organic solvent. A substrate is loaded into a reactor. The liquid precursor is supplied into the reactor through a vaporizer and is applied onto a surface of the substrate. The reactor is purged by using an inert gas. An atomic layer is deposited on the substrate by supplying an oxidizing agent to the reactor to oxidize the material applied onto the substrate. The reactor is purged by using the inert gas.

Abstract translation: 目的：提供用于形成氧化铪层的前体和使用其的形成氧化铪层的方法，以通过改善电特性来进行低温沉积工艺和提高沉积速度。 构成：通过将HfCl 4与氮化合物组合并在有机溶剂中稀释组合的材料形成液体前体。 将基底装载到反应器中。 将液体前体通过蒸发器供入反应器中并施加到基底的表面上。 通过使用惰性气体吹扫反应器。 通过向反应器中供应氧化剂以氧化施加到基底上的材料，将原子层沉积在基底上。 通过使用惰性气体吹扫反应器。

公开(公告)号：KR1020040087414A

公开(公告)日：2004-10-14

申请号：KR1020030021624

申请日：2003-04-07

Applicant: 삼성전자주식회사

Inventor： 조영진 ,  박영수 ,  이정현 ,  서범석 ,  이용균 ,  민요셉

IPC: C01G29/00 ,  H01B3/12 ,  H01G4/12

CPC classification number: C01G29/006 ,  C01G21/006 ,  C01G55/002 ,  H01B3/12 ,  H01G4/10 ,  H01G4/12

Abstract: PURPOSE: A conductive oxide having a pyrochlore structure and an oxide thin film and a capacitor containing the oxide are provided, to obtain a precursor suitable for MOCVD(metal organic chemical vapor deposition) or ALD(atomic layer deposition) for making a 3D capacitor. CONSTITUTION: The conductive oxide has a pyrochlore structure and is represented by Bi2(Ru(2-x), Six)O(7-y) or Pb2(Ru(2-x), Six)O(7-y), wherein 0

Abstract translation: 目的：提供具有烧绿石结构和氧化物薄膜的导电氧化物和含有氧化物的电容器，以获得适合于用于制造3D电容器的MOCVD（金属有机化学气相沉积）或ALD（原子层沉积）的前体。 构成：导电氧化物具有烧绿石结构，由Bi2（Ru（2-x），Six）O（7-y）或Pb2（Ru（2-x），Six）O（7-y）表示，其中 0

公开(公告)号：KR100416739B1

公开(公告)日：2004-05-17

申请号：KR1019970002966

申请日：1997-01-31

Applicant: 삼성전자주식회사

Inventor： 조은철 ,  김동섭 ,  민요셉

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/06 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521

Abstract: PURPOSE: A method for fabricating a silicon solar cell is provided to reduce fabricating cost by decreasing the consumption of a material, and to increase adaptability by maintaining the efficiency of the solar cell. CONSTITUTION: An oxide layer(23) is formed on a p-type silicon substrate(21). A photoresist pattern is formed on the oxide layer formed on the silicon substrate. The oxide layer is etched by using the photoresist pattern. The photoresist pattern is removed and a texturing process is performed. The oxide layer on the silicon substrate is etched. Phosphorous ions are diffused to the front and rear surfaces of the silicon substrate to form an n¬+ semiconductor layer(22). An oxide layer is formed on the n¬+ semiconductor layer on the silicon substrate. Aluminum is deposited on the rear surface of the silicon substrate and is sintered to form a p¬+ semiconductor layer. A photolithography process is performed to form a conductive metal layer in a predetermined region of the front surface of the silicon substrate. A lift-off process is performed. A conductive metal layer is deposited on the rear surface of the silicon substrate to form a rear surface electrode(24). Silver is electroplated on the conductive metal layer on the front surface of the silicon substrate.

Abstract translation: 目的：提供一种制造硅太阳能电池的方法，通过降低材料的消耗来降低制造成本，并通过保持太阳能电池的效率来提高适应性。 构成：在p型硅衬底（21）上形成氧化物层（23）。 在形成于硅衬底上的氧化物层上形成光刻胶图案。 通过使用光致抗蚀剂图案来蚀刻氧化物层。 去除光致抗蚀剂图案并进行纹理化处理。 蚀刻硅衬底上的氧化物层。 磷离子扩散到硅衬底的前表面和后表面以形成n + +半导体层（22）。 在硅衬底上的n + +半导体层上形成氧化物层。 铝沉积在硅衬底的后表面上并被烧结以形成p +半导体层。 进行光刻工艺以在硅衬底的前表面的预定区域中形成导电金属层。 执行剥离过程。 导电金属层沉积在硅衬底的后表面上以形成后表面电极（24）。 将银电镀在硅衬底的前表面上的导电金属层上。

公开(公告)号：KR1020040013401A

公开(公告)日：2004-02-14

申请号：KR1020020046306

申请日：2002-08-06

Applicant: 삼성전자주식회사

Inventor： 조영진 ,  민요셉 ,  박영수 ,  이정현 ,  이준기 ,  이용균

IPC: H01L21/316

CPC classification number: H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

Abstract: PURPOSE: A method for fabricating a bismuth titanium silicon oxide thin film is provided to be used as a dielectric layer and a gate insulation layer of a transistor that form a capacitor of a semiconductor substrate, by using bismuth titanium silicon oxide of high dielectric constant which is thermally and chemically stable. CONSTITUTION: Mixture composed of a bismuth precursor, a titanium precursor and a silicon precursor is supplied to a vaporizer in a non-oxide atmosphere so as to be absorbed to the surface of the substrate. The resultant structure absorbed to the surface of the substrate is oxidized to deposit an atomic layer. The bismuth titanium silicon oxide thin film has a pyrochlore structure displayed by the following chemical formula. Bi2(Ti2-xSix)O7-y where x is a number from 0.8 to 1.3 and y is a number from -1 to 1.

Abstract translation: 目的：提供一种制造铋钛氧化硅薄膜的方法，用作介电层和形成半导体衬底的电容器的晶体管的栅极绝缘层，通过使用高介电常数的铋钛氧化硅 是热和化学稳定的。 构成：将由铋前体，钛前体和硅前体组成的混合物供给到非氧化物气氛中的蒸发器，以便被吸收到基板的表面。 吸收到基底表面的所得结构被氧化沉积原子层。 铋钛氧化硅薄膜具有以下化学式显示的烧绿石结构。 Bi2（Ti2-xSix）O7-y，其中x为0.8至1.3的数，y为-1至1的数。

公开(公告)号：KR100408519B1

公开(公告)日：2003-12-06

申请号：KR1020010024043

申请日：2001-05-03

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  김대식 ,  민요셉 ,  조영진

IPC: H01L21/203

Abstract: PURPOSE: A reaction chamber for forming an atomic layer is provided to reduce a deposition time for the atomic layer, prevent undesired generation of particles, and reduce a staying time of chemicals in the reaction chamber. CONSTITUTION: A wafer stage(42) is formed on a bottom of a housing(40). An exhaust hole(44) is formed around the wafer stage(42). A heating portion(46) and an upper plate(48) of predetermined thickness are installed on an upper portion of the wafer stage(42). A barrier rib(49) is formed between the housing(40) and the upper plate(48). A space between the housing(40) and the upper plate(48) is divided into two parts by the barrier rib(49). A gas supply tube(50) is connected with the housing(40). A precursor is supplied through the gas supply tube(50). An atomic layer is formed on a surface of a wafer by the supplied precursor. A gas supply tube(54) has an injection nozzle(52). An electrode plate(58) is installed at a bottom face of the upper plate(48). The electrode plate(58) is connected with an RF power source(56). A shower head(60) is installed under the upper plate(48). A plurality of holes(62) is formed in the shower head(60). A heating portion(64) is formed in the shower head(60).

Abstract translation: 目的：提供用于形成原子层的反应室，以减少原子层的沉积时间，防止不希望的颗粒产生，并减少化学品在反应室中的停留时间。 构成：晶片台（42）形成在外壳（40）的底部上。 在晶片台（42）周围形成排气孔（44）。 在晶片台（42）的上部安装预定厚度的加热部分（46）和上板（48）。 在壳体（40）和上板（48）之间形成隔离肋（49）。 壳体（40）和上板（48）之间的空间被障壁（49）分成两部分。 气体供应管（50）与壳体（40）连接。 前体通过气体供应管（50）供应。 通过所提供的前体在晶片的表面上形成原子层。 气体供应管（54）具有注射喷嘴（52）。 电极板（58）安装在上板（48）的底面。 电极板（58）与RF电源（56）连接。 淋浴头（60）安装在上板（48）下方。 在喷头（60）中形成有多个孔（62）。 加热部分（64）形成在喷头（60）中。