公开(公告)号：KR101519711B1

公开(公告)日：2015-05-12

申请号：KR1020130049828

申请日：2013-05-03

Applicant: 현대자동차주식회사

Inventor： 신나리 ,  우희진 ,  이용성 ,  이호택 ,  류경한

IPC: H01M4/70 ,  H01M10/39

Abstract: 본 발명은, 리튬-황 전지에 있어서, 양극 황 전극의 알루미늄 집전체 및 음극 리튬 전극의 구리 집전체는 노듈 형태인 것인 리튬-황 전지를 제공한다.
또한 본 발명은, 리튬-황 전지의 제조 방법에 있어서, 알루미늄 또는 구리를 용해하는 단계, 전기도금을 이용하여 알루미늄 또는 구리 박막을 제조하는 단계 및 박막 표면 처리시 패턴을 제어하여 노듈의 크기를 지정하는 단계를 포함하는 것인 리튬-황 전지의 제조방법을 제공한다.

公开(公告)号：KR101410668B1

公开(公告)日：2014-06-25

申请号：KR1020130063772

申请日：2013-06-04

Applicant: 현대자동차주식회사 ,  포항공과대학교 산학협력단

Inventor： 김용구 ,  김솔 ,  김상학 ,  이용성 ,  황인성 ,  용기중

IPC: H01L31/04 ,  H01L31/18

CPC classification number: Y02E10/50 ,  H01L31/18 ,  H01L31/04

Abstract: The present invention relates to an eco-friendly quantum dot-sensitive solar cell and a manufacturing method thereof. The solar cell includes: an anode; a counter electrode which is opposite to the anode; and electrolyte which is placed therebetween. The anode includes: nanowires which are arranged in a line on the surface of a substrate; and Ag2S dots which are combined to the surfaces of the nanowires. The existing toxic quantum dots can be replaced with eco-friendly quantum dots. Since the Ag2S dots have a low bandgap of 1.04 eV, it is possible to absorb light of a wide range of wavelengths compared to the existing solar cell, increase efficiency of collecting and delivering electrons using an ZnO nanowire electrode, and improve contact with the electrolyte.

Abstract translation: 本发明涉及环保量子点敏感太阳能电池及其制造方法。 太阳能电池包括：阳极; 与阳极相对的对电极; 和放置在其间的电解质。 阳极包括：在基板的表面上以一条直线布置的纳米线; 和与纳米线表面结合的Ag2S点。 现有的有毒量子点可以用环保量子点代替。 由于Ag2S点具有1.04eV的低带隙，与现有的太阳能电池相比，可以吸收宽波长范围的光，从而提高使用ZnO纳米线电极收集和传送电子的效率，并改善与电解质的接触 。

公开(公告)号：KR101305131B1

公开(公告)日：2013-09-12

申请号：KR1020070057547

申请日：2007-06-13

Applicant: 현대자동차주식회사

Inventor： 이용성 ,  이종흔 ,  문창섭 ,  김해룡

IPC: C04B35/453 ,  C01G19/04 ,  C01G19/00 ,  B82Y30/00

Abstract: 본 발명은 자동차용 매연 감지 센서의 제조 방법에 관한 것으로서, 더욱 상세하게는 디젤 자동차의 배기가스에 대한 선택적 감응성을 향상시킬 수 있고, 산화주석에 의한 뛰어난 가스감도 및 빠른 반응속도를 나타내어 매연 감지에 뛰어난 효과를 제공할 수 있도록 한 자동차용 매연 감지 센서의 제조 방법에 관한 것이다.
이를 위해, 본 발명은 상온에서 염화주석 수화물(SnCl
2 ㆍ2H
2 O)을 물에 녹인 후, 아민 수화물(N
2 H
4 ㆍ2H
2 O) 수용액을 첨가하는 단계와; 상기 혼합용액의 온도가 20℃로 냉각되었을 때, 핵생성제로 PtCl
4 5~100 ppm를 첨가한 후, 교반하는 단계와; 교반 후에 50% NaOH수용액을 첨가하는 단계와; 600℃에서 1시간 열처리하여 SnO
2 로 산화시키는 단계; 를 포함하여 이루어지는 것을 특징으로 하는 자동차용 매연 감지 센서의 제조 방법을 제공한다.
매연 감지 센서, 제조 방법, 자동차, 산화주석, 핵생성제

公开(公告)号：KR1020130021771A

公开(公告)日：2013-03-06

申请号：KR1020110084234

申请日：2011-08-23

Applicant: 현대자동차주식회사

Inventor： 이용성 ,  홍경국 ,  이종석

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/66287 ,  H01L21/02293 ,  H01L21/20 ,  H01L29/7802

Abstract: PURPOSE: A semiconductor device is provided to reduce the on resistance of a device by preventing the diffusion of a depletion layer generated in a pn junction through a depletion diffusion preventing layer on the side of a trench gate. CONSTITUTION: An electric field dispersion layer(61) is formed on the lower side of a trench source(60). The electric field dispersion layer is formed by implanting P-type ions and disperses electric field concentrated on a lower oxidation layer(59). A depletion diffusion preventing layer(62) is formed on the upper side of an N- epitaxial layer(3). The depletion diffusion preventing layer prevents the diffusion of the depletion layer in a pn junction on the lower side of a trench source to affect a current flow. The depletion diffusion preventing layer forms an N+ region by an epitaxial growth method. [Reference numerals] (2) N+ substrate; (3) N- epitaxial layer

Abstract translation: 目的：提供一种半导体器件，以通过防止在pn结中产生的耗尽层扩散通过沟槽栅极侧的耗尽扩散防止层来降低器件的导通电阻。 构成：在沟槽源（60）的下侧形成电场分散层（61）。 通过注入P型离子并将电场分散在下部氧化层（59）上形成电场分散层。 耗尽扩散防止层（62）形成在N-外延层（3）的上侧。 耗尽扩散防止层防止在沟槽源的下侧的pn结中的耗尽层的扩散以影响电流。 耗尽扩散防止层通过外延生长法形成N +区域。 （附图标记）（2）N +基板; （3）N-外延层

公开(公告)号：KR1020080051526A

公开(公告)日：2008-06-11

申请号：KR1020060122827

申请日：2006-12-06

Applicant: 현대자동차주식회사

Inventor： 이용성

IPC: H02N2/00 ,  H02N2/10

CPC classification number: H02N2/18 ,  H01L41/1136

Abstract: A power generator using a piezoelectric body is provided to improve durability by including receiving units to prevent damage of the piezoelectric bodies through restriction of movement of mass bodies. A power generator includes a positive terminal(102), a negative terminal(104), a plurality of piezoelectric bodies(100), and a plurality of mass bodies(106). The negative terminal surrounds the positive terminal without the contact with the positive terminal. The plurality of piezoelectric bodies are radially formed around the positive and negative terminals. One ends of the piezoelectric bodies are connected to the positive and negative terminals, and the other ends of the piezoelectric bodies are not connected to the positive and negative terminals. The plurality of mass bodies are connected to the other ends of the plurality of piezoelectric bodies respectively. The power generator further includes a case(110) with receiving units(108) to receive the mass bodies.

Abstract translation: 提供一种使用压电体的发电机，通过包括接收单元来提高耐久性，以通过限制质量体的运动来防止压电体损坏。 发电机包括正极端子（102），负极端子（104），多个压电体（100）和多个质量体（106）。 负极端子围绕正极端子而不与正极端子接触。 多个压电体围绕正端子和负端子径向地形成。 压电体的一端与正极端子和负极端子连接，压电体的另一端不与正极端子和负极端子连接。 多个质量体分别连接到多个压电体的另一端。 发电机还包括具有用于接收质量体的接收单元（108）的壳体（110）。

公开(公告)号：KR1020070014290A

公开(公告)日：2007-02-01

申请号：KR1020050068786

申请日：2005-07-28

Applicant: 현대자동차주식회사

Inventor： 이용성

IPC: H01L27/12

CPC classification number: B81C1/0015 ,  B81C1/00349 ,  B81C1/00388 ,  B81C1/00436

Abstract: A method for fabricating a silicon floating structure using a cross-bonded SOI wafer is provided to guarantee a gap of at least 50 microns between a silicon structure and a lower handling wafer by embodying a silicon structure by a DRIE(deep reactive ion etching) process performed on a process wafer and by protecting the sidewall surface of the silicon structure by an oxide layer. Each oxide layer is grown on a process wafer(11) and a handling wafer(12). The process wafer is bonded to the handling wafer. The process wafer is adjusted in thickness according to the thickness of a silicon structure to be fabricated. A mask is deposited on the upper surface of the process wafer. A photolithography process is performed to generalize a pattern. A PR(photoresist) pattern is used to pattern a mask. The process wafer is etched by the patterned mask to define the silicon structure. An oxide layer is grown to protect the sidewall surface of the silicon structure. A silicon oxide layer(14) exposed by etching the silicon structure is removed. The handling wafer is etched to float the silicon structure. The oxide layer surrounding the silicon structure is removed. The mask has sufficient selectivity and thickness so that the process wafer and the silicon oxide layer can be etched by a DRIE process.

Abstract translation: 提供使用交叉键合的SOI晶片制造硅浮动结构的方法，以通过DRIE（深反应离子蚀刻）工艺来体现硅结构来确保硅结构和下处理晶片之间的至少50微米的间隙 并且通过氧化物层保护硅结构的侧壁表面。 每个氧化物层在处理晶片（11）和处理晶片（12）上生长。 处理晶片结合到处理晶片。 根据要制造的硅结构的厚度来调整工艺晶片的厚度。 掩模沉积在处理晶片的上表面上。 执行光刻处理以概括图案。 PR（光致抗蚀剂）图案用于对掩模进行图案化。 通过图案化掩模蚀刻工艺晶片以限定硅结构。 生长氧化物层以保护硅结构的侧壁表面。 去除通过蚀刻硅结构而暴露的氧化硅层（14）。 蚀刻处理晶片以漂浮硅结构。 去除围绕硅结构的氧化物层。 掩模具有足够的选择性和厚度，使得可以通过DRIE工艺来蚀刻工艺晶片和氧化硅层。

公开(公告)号：KR1020070014288A

公开(公告)日：2007-02-01

申请号：KR1020050068782

申请日：2005-07-28

Applicant: 현대자동차주식회사

Inventor： 이용성

IPC: H01L27/12

CPC classification number: B81C1/0015 ,  B81C1/00349 ,  B81C1/00388 ,  B81C1/00436

Abstract: A method for fabricating a silicon floating structure on an SOI substrate is provided to guarantee a gap of at least 50 microns between a silicon structure and a lower handling wafer by preventing an upper vibration structure from being etched and by etching only the lower handling wafer. An SOI wafer is prepared. A photolithography process is performed to generalize a pattern. A PR(photoresist) pattern is used to pattern a mask. A process wafer(11) is etched by using the patterned mask to define a silicon structure. A polymer layer deposited on the wall of the silicon structure is eliminated in a DRIE(deep reactive ion etching) process for forming a smooth uniform oxide layer. An oxide layer is formed to protect the lateral surface of the silicon structure. A silicon oxide layer(14) exposed by etching the silicon structure is removed. A part of a handling wafer(12) to which the same shape as the silicon structure is projected is eliminated. The oxide layer surrounding the silicon structure is removed.

Abstract translation: 提供了一种在SOI衬底上制造硅浮动结构的方法，以通过防止上部振动结构被蚀刻并且仅蚀刻下部处理晶片来确保硅结构和下部处理晶片之间的至少50微米的间隙。 准备SOI晶片。 执行光刻处理以概括图案。 PR（光致抗蚀剂）图案用于对掩模进行图案化。 通过使用图案化掩模蚀刻工艺晶片（11）以限定硅结构。 沉积在硅结构的壁上的聚合物层在用于形成平滑的均匀氧化物层的DRIE（深反应离子蚀刻）工艺中被消除。 形成氧化物层以保护硅结构的侧表面。 去除通过蚀刻硅结构而暴露的氧化硅层（14）。 消除与硅结构相同形状的处理晶片（12）的一部分。 去除围绕硅结构的氧化物层。

公开(公告)号：KR1020030092720A

公开(公告)日：2003-12-06

申请号：KR1020020030494

申请日：2002-05-31

Applicant: 현대자동차주식회사

Inventor： 이용성

IPC: C04B35/468 ,  H01C7/02

CPC classification number: C04B35/468 ,  C04B2111/90 ,  C04B2235/3236 ,  H01C7/02 ,  H05B3/141

Abstract: PURPOSE: Provided is a ceramic PTC composition having a low electrical resistivity at a room temperature and a decreased initial inrush current suitable to be used in a material for automobile heater. CONSTITUTION: The ceramic PTC composition having a low electrical resistivity is characterized by comprising 64-82 mol% of BaTiO3, 0.25-0.4 mol% of Y2O3, 10-15 mol% of CaTiO3, 0.01-0.05 mol% of MnO2, 1-1.5 mol% of SiO2, 5-10 mol% of SrTiO3 and 0.5-2.5 mol% of PbTiO3 to which 0.5-2.5 mol% of MoSi2 is added. Alternatively, the ceramic PTC composition comprises 3-5 mol% of MoSi2 instead of 0.5-2.5 mol% of PbTiO3 and 0.5-2.5 mol% of MoSi2.

Abstract translation: 目的：提供一种在室温下具有低电阻率和适用于汽车加热器材料的初始浪涌电流降低的陶瓷PTC组合物。 构成：具有低电阻率的陶瓷PTC组合物的特征在于包含64-82mol％的BaTiO 3，0.25-0.4mol％的Y 2 O 3，10-15mol％的CaTiO 3，0.01-0.05mol％的MnO 2，1-1.5 SiO 2的摩尔％，SrTiO 3的5-10摩尔％和添加0.5〜2.5摩尔％的MoSi 2的0.5〜2.5摩尔％的PbTiO 3。 或者，陶瓷PTC组合物包含3-5mol％的MoSi 2代替0.5-2.5mol％的PbTiO 3和0.5-2.5mol％的MoSi 2。

公开(公告)号：KR1020030092719A

公开(公告)日：2003-12-06

申请号：KR1020020030493

申请日：2002-05-31

Applicant: 현대자동차주식회사

Inventor： 이용성

IPC: C04B35/468 ,  H01C7/02

CPC classification number: C04B35/468 ,  C04B2111/90 ,  C04B2235/3236 ,  H01C7/02 ,  H05B3/141

Abstract: PURPOSE: Provided is a ceramic PTC composition for an automobile heater having a low electrical resistivity at a room temperature and a decreased initial inrush current, with no influence on the life of the fuse of automobile. CONSTITUTION: The ceramic PTC composition for an automobile heater is characterized by comprising 64-82 mol% of BaTiO3, 0.25-0.4 mol% of Y2O3, 8-15 mol% of CaTiO3, 0.01-0.05 mol% of MnO2, 1-1.5 mol% of SiO2, 5-10 mol% of SrTiO3 and 3-10 mol% of LaNb2O6.

Abstract translation: 目的：提供一种用于汽车加热器的陶瓷PTC组合物，其在室温下具有低电阻率和降低的初始浪涌电流，对汽车保险丝的寿命没有影响。 构成：用于汽车加热器的陶瓷PTC组合物的特征在于包含64-82mol％的BaTiO 3，0.25-0.4mol％的Y 2 O 3，8-15mol％的CaTiO 3，0.01-0.05mol％的MnO 2，1-1.5mol 的SiO2，5-10mol％的SrTiO3和3-10mol％的LaNb2O6。

公开(公告)号：KR1020010066424A

公开(公告)日：2001-07-11

申请号：KR1019990068140

申请日：1999-12-31

Applicant: 현대자동차주식회사 ,  기아자동차주식회사

Inventor： 이용성

IPC: B60R1/06

Abstract: PURPOSE: A heater of an outside mirror for a vehicle is provided to quicken a heating speed of the outside mirror and to reduce a cost of the heater. CONSTITUTION: A heater of an outside mirror comprises a chrome(53) coated in the rear face of a mirror(52) for reflecting; many electrodes(1) arranged sequentially for uniformly feeding current into the chrome(53) and fed positive and negative current alternatively; a temperature read switch(2) to detect a temperature of the chrome(53); and a relay to supply/isolate current into the chrome(53) by temperature read switch(2). A switch is installed between a battery and the electrodes to turn on/off the heater.

Abstract translation: 目的：提供一种用于车辆的外部反射镜的加热器，以加速外部反射镜的加热速度并降低加热器的成本。 构成：外部反射镜的加热器包括涂覆在反射镜（52）的后表面中的铬（53），用于反射; 依次布置许多电极（1），以均匀地将电流馈送到铬（53）中，并交替地馈送正和负电流; 用于检测铬（53）的温度的温度读取开关（2）; 以及通过温度读取开关（2）将电流供应/隔离到铬（53）中的继电器。 在电池和电极之间安装开关以打开/关闭加热器。