公开(公告)号：WO2006007077A3

公开(公告)日：2006-10-26

申请号：PCT/US2005016460

申请日：2005-05-11

Applicant: ADVANCED TECH MATERIALS ,  WANG ZIYUN ,  XU CHONGYING ,  HENDRIX BRYAN C ,  ROEDER JEFFERY F ,  CHEN TIANNIU ,  BAUM THOMAS H

Inventor： WANG ZIYUN ,  XU CHONGYING ,  HENDRIX BRYAN C ,  ROEDER JEFFERY F ,  CHEN TIANNIU ,  BAUM THOMAS H

IPC: C07F7/02 ,  C07F7/10 ,  C23C16/00 ,  H01L21/31

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，硅碳氮氧化物和氮化硅（Si 3 N 4 N 4）的膜的半导体器件的制造中用于形成含硅膜的硅前驱体，以及 使用低温（例如，<550℃）化学气相沉积工艺在衬底上沉积硅前体的方法，用于制造ULSI器件和器件结构。

公开(公告)号：WO0034549A2

公开(公告)日：2000-06-15

申请号：PCT/US9928832

申请日：1999-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK S ,  VAN BUSKIRK PETER C ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  C23C16/00

CPC classification number: C23C16/409 ,  C23C16/40 ,  C23C16/407 ,  C23C16/4485 ,  C23C16/56 ,  H01L21/31691

Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alcoxide group and is decomposed and deposited at a temperature lower than 450 DEG C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.

Abstract translation: 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是Bi复合物，其包含至少一种烷氧基，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。

公开(公告)号：EP2018642A4

公开(公告)日：2009-05-27

申请号：EP07758385

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00 ,  C23C16/30

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：EP0990059A4

公开(公告)日：2000-11-02

申请号：EP98934193

申请日：1998-06-26

Applicant: ADVANCED TECH MATERIALS ,  SIEMENS AG

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  VAN BUSKIRK PETER C ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  C23C16/00

CPC classification number: H01L21/31691 ,  C23C16/40 ,  C23C16/56

Abstract: A low temperature CVD process for deposition of bismuth-containing ceramic thin films (12) suitable for integration to fabricate ferroelectric memory devices (10). The bismuth-containing film can be formed using a tris ( beta -diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：EP2078102A4

公开(公告)日：2010-11-24

申请号：EP07758383

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C07F7/30 ,  C23C16/22 ,  H01L45/00

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

公开(公告)号：EP2059626A4

公开(公告)日：2011-01-26

申请号：EP07814648

申请日：2007-08-31

Applicant: ADVANCED TECH MATERIALS

Inventor： CLEARY JOHN M ,  ARNO JOSE I ,  HENDRIX BRYAN C ,  NAITO DONN ,  BATTLE SCOTT ,  GREGG JOHN ,  WODJENSKI MICHAEL J ,  XU CHONGYING

IPC: C23C16/44 ,  C23C16/448

CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract translation: 装置和挥发源试剂易受粒子产生或在相应的源试剂蒸气粒子的存在的方法，其中搜索颗粒的产生或存在由蒸汽发生系统的结构或处理功能抑制。搜索装置和方法也适用于 液体和固体源的试剂，特别是固体源试剂：如金属卤化物，例如氯化铪。 在一个具体实现的源试剂是由源试剂材料的多孔单片散装形式构成。 本发明的装置和方法有效地用于为应用程序提供源试剂蒸气：如原子层沉积（ALD）和离子注入。

公开(公告)号：EP1373278A4

公开(公告)日：2007-09-05

申请号：EP02728580

申请日：2002-03-27

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  XU CHONGYING ,  HENDRIX BRYAN C ,  ROEDER JEFFREY F

IPC: C23C16/40 ,  C07F7/00 ,  C23C14/08 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/3205 ,  C07F7/02 ,  C07F7/10 ,  C07F7/28 ,  C23C8/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/4763

CPC classification number: H01L21/28185 ,  C07F7/006 ,  C07F7/025 ,  C07F7/10 ,  C23C14/08 ,  C23C14/083 ,  C23C16/401 ,  C23C16/405 ,  H01L21/02142 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/3125 ,  H01L21/31604 ,  H01L21/3185 ,  H01L29/517 ,  H01L29/518

Abstract: A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or (I), wherein M is Zr, Hf, Z, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R?1 and R2¿ is same or different and is independently selected from H, aryl, perfluoraryl, C¿1?-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR?1R2)¿4-x-y or (II), wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R?1 and R2¿ is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C¿1?-c8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.