公开(公告)号：EP2688688A4

公开(公告)日：2014-12-31

申请号：EP12760859

申请日：2012-02-28

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  RAMAN VIJAY IMMANUEL ,  VENKATARAMAN SHYAM SUNDAR ,  MELLIES RAIMUND ,  ZHONG MINGJIE

IPC: H01L21/02 ,  C11D1/72 ,  C11D1/825 ,  C11D3/20 ,  C11D11/00 ,  H01L21/306

CPC classification number: H01L21/02074 ,  C11D1/662 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D1/825 ,  C11D3/0073 ,  C11D3/2041 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/3757 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/426

公开(公告)号：EP2812422A4

公开(公告)日：2016-10-19

申请号：EP13746032

申请日：2013-01-24

Applicant: BASF SE ,  BASF SCHWEIZ AG

Inventor： LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  ZHONG MINGJIE

IPC: C11D7/22 ,  H01L21/02

CPC classification number: C11D3/3427 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.

公开(公告)号：EP2614121A4

公开(公告)日：2016-03-09

申请号：EP11823139

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  CHU JEA-JU ,  VENKATARAMAN SHYAM SUNDAR ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE

IPC: C09G1/02 ,  C08L33/24 ,  C09G1/04 ,  C09G1/18 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09K13/00 ,  C08L33/24 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices.

公开(公告)号：EP2614122A4

公开(公告)日：2014-01-15

申请号：EP11823140

申请日：2011-09-06

Applicant: BASF SE

Inventor： NOLLER BASTIAN ,  FRANZ DIANA ,  LI YUZHUO ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE ,  VENKATARAMAN SHYAM SUNDAR

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09K13/00 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053