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1.发明公开AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS 审中-公开WÄSSRIGEREINIGUNGSZUSAMMENSETZUNGEN MIT N-SUBSTITUIERTEN DIAZENIUMDIOXIDEN UND / ODER N'-HYDROXY-DIAZENIUM-OXIDSALZEN
公开(公告)号：EP2614122A4
公开(公告)日：2014-01-15
申请号：EP11823140
申请日：2011-09-06
Applicant: BASF SE
Inventor： NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
IPC: C09G1/02 , H01L21/3105
CPC classification number: C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
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2.发明公开A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING TWO TYPES OF CORROSION INHIBITORS 有权成分用于化学机械抛光（CMP）带双缓蚀剂的类型
公开(公告)号：EP2688966A4
公开(公告)日：2014-11-12
申请号：EP12760432
申请日：2012-03-19
Applicant: BASF SE
Inventor： NOLLER BASTIAN , LAUTER MICHAEL , SUGIHARTO ALBERT BUDIMAN , LI YUZHUO , RUSHING KENNETH , FRANZ DIANA , BÖHN ROLAND , GAO NING
IPC: C09G1/02 , H01L21/321
CPC classification number: H01L21/3212 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/30625
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公开(公告)号：SG11201407168PA
公开(公告)日：2014-11-27
申请号：SG11201407168P
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/304 , H01L21/302
Abstract: A process for the manufacture of semiconductor devices is provided. The process comprises the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a polymer comprising at least one N-heterocycle, and (M) an aqueous medium and whereas Q1 has a pH of from 1.5 to 4.5.
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公开(公告)号：SG188459A1
公开(公告)日：2013-04-30
申请号：SG2013017256
申请日：2011-09-06
Applicant: BASF SE
Inventor： NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
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公开(公告)号：SG10201506215WA
公开(公告)日：2015-09-29
申请号：SG10201506215W
申请日：2011-09-06
Applicant: BASF SE
Inventor： NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
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Patent Agency Ranking
公开(公告)号：MX2008013566A
公开(公告)日：2008-10-31
申请号：MX2008013566
申请日：2007-04-26
Applicant: BASF SE
Inventor： PAKUSCH JOACHIM , STOESSER MICHAEL , GUZMANN MARCUS , LOEFFLER ACHIM , MIJOLOVIC DARIJO , KONRAD ROUVEN , FRANZ DIANA , RITTIG FRANK
IPC: C08F220/00
Abstract: La presente invención se refiere a copolímeros que se pueden obtener de la copolimerización de radical libre de por lo menos (a) un ácido carboxílico monoetilénicamente insaturado teniendo de 3 a 6 átomos de carbono o su anhídrido con (b) una mezcla de reacción que comprende por lo menos un componente de la fórmula estructural general (I) (ver fórmula (I)) en donde R1, R2, R3, R4, son cada uno independientemente H o alquilo de C1-C4, n y m, son cada uno independientemente un entero de 1 a 100 y R5 es H o metilo, a un proceso para preparar el polímero inventivo y a su uso como un inhibidor de escama.
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公开(公告)号：CA2648696A1
公开(公告)日：2007-11-08
申请号：CA2648696
申请日：2007-04-26
Applicant: BASF SE
Inventor： FRANZ DIANA , KONRAD ROUVEN , GUZMANN MARCUS , LIU YAQIAN
IPC: C08F220/00
Abstract: The present invention relates to copolymers which are obtainable from the free radical copolymerization of at least (a) a monoethylenically unsaturated carboxylic acid having 3 to 6 carbon atoms or the anhydride thereof with (b) a reaction mixture comprising a component of the general structural formula where R1, R2, R3, R4, independently of one another, are H or C1- to C4-alkyl, n and m, independently of one another, are an integer from 1 to 100 and R5 is H or methyl, a process for the preparation of the polymer according to the invention and the use thereof as a scale inhibitor.
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公开(公告)号：SG11201407520XA
公开(公告)日：2014-12-30
申请号：SG11201407520X
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA
IPC: C09G1/02 , H01L21/304 , H01L21/306
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9.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
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公开(公告)号：EP2847785A4
公开(公告)日：2016-03-16
申请号：EP13788644
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/30625
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