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    33.
    发明专利
    未知

    公开(公告)号：DE3770285D1

    公开(公告)日：1991-07-04

    申请号：DE3770285

    申请日：1987-01-29

    Applicant: CANON KK

    Inventor： HATANAKA KATSUNORI ,  UZAWA SHUNICHI ,  NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI

    IPC: H04N1/40 ,  H04N3/15

    Abstract: A photoelectric conversion apparatus in which a charge accumulated on a capacitor provided for each of a plurality of photoelectric conversion elements is matrix-transferred, and the matrix-transferred signal is serially output by switch array means.A matrix wiring unit for the matrix transfer is arranged on the side opposite to the photoelectric conversion elements so as not to cross signal lines extending from the capacitors.The switch array means comprises first switch means for sequentially transferring the matrix-­transferred signal, first readout means for reading out the input signal transferred by the first switch means, second switch means which is arranged in correspondence with the first switch means and is operated synchronously with the corresponding first switch means, second readout means for reading out an output from the second switch means, and differential amplifier means for receiving the outputs from the first and second readout means and outputting a signal corresponding a difference therebetween.

    IMAGE READOUT APPARATUS
    34.
    发明专利
    IMAGE READOUT APPARATUS 未知

    公开(公告)号：GB2163316B

    公开(公告)日：1988-07-27

    申请号：GB8518018

    申请日：1985-07-17

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI ,  SEITOH SHINICHI ,  HATANAKA KATSUNORI

    IPC: H04N1/40 ,  H04N3/12

    Abstract: An image readout apparatus includes a plurality of photoelectric conversion elements, storage devices provided for each of the photoelectric conversion elements for storing each output signal from the photoelectric conversion elements, and discharge switches provided each in parallel with each of the storage devices. In the image readout apparatus, the photoelectric conversion elements and discharge switches are respectively divided into a predetermined number of blocks and the signal transference is performed collectively for each block, thus enabling a high-speed and reliable operation.

    Photosensor array
    36.
    发明专利
    Photosensor array 未知

    公开(公告)号：GB2175478A

    公开(公告)日：1986-11-26

    申请号：GB8608824

    申请日：1986-04-11

    Applicant: CANON KK

    Inventor： HATANAKA KATSUNORI ,  NAKAGAWA KATSUMI ,  FUKAYA MASAKI ,  KAWAKAMI SOICHIRO

    IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028 ,  H04N1/03 ,  H04N1/193 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374

    Abstract: Each photosensor Sr1... in an array is connected in parallel with a FET switch STr1 ..., which is normally closed to by-pass the photosensor. The photoresistors in each column are connected in series. To read any photoresistor its associated switch is opened via a row conductor Tr, Tg, Tb and an output sensed at the base A1, A2,..., An of the column. Series connection allows fewer conductors to be used compared to the prior art (fig. 3). … In an alternative embodiment, each photoresistor and FET switch is replaced by a single photosensitive FET (fig. 7). … …

    37.
    发明专利
    未知

    公开(公告)号：FR2568709A1

    公开(公告)日：1986-02-07

    申请号：FR8511629

    申请日：1985-07-30

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI ,  SEITO SHINICHI ,  KURODA YASUO ,  HATANAKA KATSUNORI

    IPC: H03K17/00 ,  G09G3/20 ,  H01L27/10 ,  H01L31/0248 ,  H04N1/028 ,  H04N1/40 ,  G09F9/30

    Abstract: A matrix circuit has a plurality of blocks each including a plurality of semiconductor unit elements, the semiconductor unit elements of each block being adapted to be impressed with a predetermined voltage at the same time, each unit element becoming active when impressed with the predetermined voltage, and a drive device for impressing the predetermined voltage to the plurality of blocks sequentially. The matrix circuit includes a first selective device for selecting either ground or a desired other than ground voltage, and a second selective device for selecting one of the output of the drive device and the output of the first selective device whereby the output of the second selective device renders active the plurality of unit elements of each block.

    Thin film transistor with wiring layer continuous with the source and drain
    39.
    发明专利
    Thin film transistor with wiring layer continuous with the source and drain 未知

    公开(公告)号：GB2140203A

    公开(公告)日：1984-11-21

    申请号：GB8406367

    申请日：1984-03-12

    Applicant: CANON KK

    Inventor： HIRAI YUTAKA ,  OSADA YOSHIYUKI ,  NAKAGIRI TAKASHI ,  HATANAKA KATSUNORI

    IPC: H01L23/522 ,  H01L29/786 ,  H01L29/78

    Abstract: In a semiconductor device comprising a wiring to be connected to the source region 1105, 1106 or the drain region 1107, 1108 of a thin film, transistor X, at least a portion of the wiring comprises a wiring part Y having the same cross-sectional structure as said source region or said drain region. This wiring part is formed continuously and simultaneously with said source region or said drain region in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor. The layers comprise polycrystalline Si 1101, n+Si 1102 and Al, Mo or Cr 1103 on a glass or quartz substrate 1100.

    40.
    发明专利
    未知

    公开(公告)号：DE3112865A1

    公开(公告)日：1981-12-24

    申请号：DE3112865

    申请日：1981-03-31

    Applicant: CANON KK

    Inventor： HIRAI YUTAKA ,  HATANAKA KATSUNORI ,  AYATA NAOKI ,  UZAWA SHUNICHI

    IPC: H01L27/146 ,  H04N1/03 ,  H04N1/028 ,  H04N3/15 ,  H01L27/14

    Abstract: A photoelectric converter in solid-state assembly, comprising the following sections juxtaposed integrally on the same substrate: a photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; a charge accumulating section constituted of a number of accumulating means, each being provided for each of said photoelectric converting elements, for accumulation of charge signals photoelectrically converted by corresponding photoelectric converting elements; a transistor section for transfer constituted of a number of transistors for transfer, each being provided for each of said accumulating means, to perform a switching operation for transfer of the signals accumulated in corresponding accumulating means; and a BBD transfer section for outputting the signals transferred from each of said accumulating means by arrangement in time series thereof; said BBD section being constituted of a number of transistor and a number of capacitors; and said photoelectric converting elements, said transistors for transfer and the transistors constituting said BBD transfer section being constituted of thin semiconductor films.

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