公开(公告)号：US20150380604A1

公开(公告)日：2015-12-31

申请号：US14852212

申请日：2015-09-11

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Chien-Fu HUANG ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.

Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。

公开(公告)号：US20150194586A1

公开(公告)日：2015-07-09

申请号：US14663544

申请日：2015-03-20

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/14 ,  H01L33/10 ,  H01L33/08 ,  H01L33/48 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。

公开(公告)号：US20140077238A1

公开(公告)日：2014-03-20

申请号：US14089591

申请日：2013-11-25

Applicant: Epistar Corporation

Inventor： Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.

Abstract translation: 发光装置包括：载体; 形成在所述载体上的发光结构，其中所述发光结构具有面向所述载体的第一表面，与所述第一表面相对的第二表面，以及在所述第一表面和所述第二表面之间的有源层; 从所述第一表面延伸并穿过所述有源层的多个第一沟槽，以限定多个发光单元; 以及从所述第二表面延伸并穿过所述多个发光单元中的每一个的有源层的多个第二沟槽。

公开(公告)号：US20140048768A1

公开(公告)日：2014-02-20

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Chien-Fu HUANG ,  Shih-Chang LEE ,  Yi-Ming CHEN ,  Shiuan-Leh LIN

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

公开(公告)号：US20130341667A1

公开(公告)日：2013-12-26

申请号：US14011502

申请日：2013-08-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Min-Hsun HSIEH ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Shih-I CHEN

IPC: H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。