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61 records (took 0.025 seconds)

    32.
    发明专利
    未知

    公开(公告)号：DE102005037321A1

    公开(公告)日：2007-02-15

    申请号：DE102005037321

    申请日：2005-08-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MAHLER JOACHIM ,  HAIMERL ALFRED ,  SCHOBER WOLFGANG ,  BAUER MICHAEL ,  KESSLER ANGELA

    IPC: H01L23/48 ,  H01L21/48 ,  H01L21/60

    Abstract: The invention relates to a semiconductor device with conductor tracks between a semiconductor chip and a circuit carrier, and to a method for producing the same. The conductor tracks extend from contact areas on the top side of the semiconductor chip to contact pads on the circuit carrier. The conductor tracks include an electrically conductive polymer in the semiconductor device.

    33.
    发明专利
    未知

    公开(公告)号：DE102005020453A1

    公开(公告)日：2006-11-09

    申请号：DE102005020453

    申请日：2005-04-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BAUER MICHAEL ,  WIENEKE-KESSLER ANGELA ,  SCHOBER WOLFGANG ,  HAIMERL ALFRED ,  MAHLER JOACHIM

    IPC: H01L23/495 ,  B82B1/00 ,  B82B3/00 ,  H01L21/48

    Abstract: A lead structure for a semiconductor component includes: external leads for external connections outside a plastic housing composition, internal leads for electrical connections within the plastic housing composition, and a chip mounting island composed of the lead material. While leaving free contact pads of the internal leads, the top sides of the chip mounting island and the internal leads are equipped with nanotubes as an anchoring layer. The plastic housing composition is arranged in the interspaces between the nanotubes arranged on the internal leads, while an adhesive composition for the semiconductor chip is arranged in the interspaces between the nanotubes arranged on the chip mounting island. The adhesive composition and the plastic housing composition fill the interspaces in a manner free of voids.

    36.
    发明专利
    未知

    公开(公告)号：DE102004047522B3

    公开(公告)日：2006-04-06

    申请号：DE102004047522

    申请日：2004-09-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BAUER MICHAEL ,  KESSLER ANGELA ,  SCHOBER WOLFGANG ,  HAIMERL ALFRED ,  MAHLER JOACHIM

    IPC: H01L23/50 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

    Abstract: A semiconductor chip (1) has a metal coating structure (2) which has on an active upper side (3) of the semiconductor chip (1) at least one lower metal layer (8) with copper or copper alloy, on which a central metal layer (9) with nickel is arranged. The metal coating structure (2) is terminated by an upper metal layer (10) of palladium and/or a precious metal. The central metal layer (9) with nickel and/or nickel phosphide has a rough interface (11) with respect to the plastic package molding compound surrounding the metal coating structure (2).

    37.
    发明专利
    未知

    公开(公告)号：DE102004027787A1

    公开(公告)日：2006-01-05

    申请号：DE102004027787

    申请日：2004-06-08

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HAIMERL ALFRED ,  KESSLER ANGELA ,  SCHOBER WOLFGANG ,  BAUER MICHAEL ,  MAHLER JOACHIM

    IPC: H01L21/50 ,  H01L21/56 ,  H01L23/055 ,  H01L23/28 ,  H01L23/31

    Abstract: The invention relates to a semiconductor component having a plastic housing and a semiconductor chip (2). The semiconductor chip (2) is mounted on a mounting side (3) of a system support (4). The system support (4) comprises a wiring structure (5), which is mechanically and electrically connected to the semiconductor chip (2) via electrical connecting elements (6). The plastic housing has a flattened thermoplastic material (7), which embeds the semiconductor chip (2) and the connecting elements (6) and which is placed on the mounting side (3) of the system support (4).

    38.
    发明专利
    未知

    公开(公告)号：DE10325029B4

    公开(公告)日：2005-06-23

    申请号：DE10325029

    申请日：2003-06-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： REISS MARTIN ,  HAIMERL ALFRED ,  KROEHNERT STEFFEN

    IPC: H01L23/31 ,  H01L23/498 ,  H01L23/10 ,  H01L23/16 ,  H01L23/28 ,  H01L23/50

    Abstract: The invention relates to a substrate-based chip package, comprising a substrate on which a chip is fastened by a die-attach material. The substrate is provided with a solder resist (on both sides) and, on the side that is opposite from the chip, has conductor tracks which are provided with solder balls and are connected to the chip by means of wire bridges which extend through a bonding channel which is sealed with a glob top. The chip and the substrate on the chip side being encapsulated by a molded cap.

    Chipkartenmodul, Chipkarte, und Verfahren zum Herstellen eines Chipkartenmoduls
    39.
    发明专利
    Chipkartenmodul, Chipkarte, und Verfahren zum Herstellen eines Chipkartenmoduls 未知

    公开(公告)号：DE102014107299A1

    公开(公告)日：2015-11-26

    申请号：DE102014107299

    申请日：2014-05-23

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PÜSCHNER FRANK ,  HAIMERL ALFRED ,  POHL JENS ,  SCHINDLER WOLFGANG

    IPC: H01L23/492 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48

    Abstract: In verschiedenen Ausführungsbeispielen wird ein Chipkartenmodul bereitgestellt. Das Chipkartenmodul kann ein Substrat mit einer ersten Hauptoberfläche und einer der ersten Hauptoberfläche gegenüberliegenden zweiten Hauptoberfläche aufweisen, wobei das Substrat mehrere Durchkontaktierungen aufweisen kann, die sich durch das Substrat von der ersten Hauptoberfläche zu der zweiten Hauptoberfläche erstrecken. Ferner kann das Chipkartenmodul einen Chip über der ersten Hauptoberfläche des Substrats aufweisen, sowie eine erste Metallstruktur über der zweiten Hauptoberfläche des Substrats, elektrisch isolierendes Material, das die erste Metallstruktur bedeckt, und eine zweite Metallstruktur über dem elektrisch isolierenden Material, wobei die zweite Metallstruktur mittels des elektrisch isolierenden Materials von der ersten Metallstruktur elektrisch isoliert sein kann. Der Chip kann mittels mindestens einer ersten Durchkontaktierung der mehreren Durchkontaktierungen mit der ersten Metallstruktur elektrisch leitend verbunden sein, und der Chip kann mittels mindestens einer zweiten Durchkontaktierung der mehreren Durchkontaktierungen mit der zweiten Metallstruktur elektrisch leitend verbunden sein.

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