公开(公告)号：DE10238582B4

公开(公告)日：2006-01-19

申请号：DE10238582

申请日：2002-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN

IPC: H01L21/60 ,  H01L21/66 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50

Abstract: Integrated circuit comprises an elastically deformable protrusion (11) on a switching substrate (10), a contact unit (13) arranged on the protrusion for producing an electrical connection, and a rewiring unit (12, 14, 15) for electrically connecting an active semiconductor section of the integrated circuit to the contact unit. The rewiring unit is formed as a ring around the protrusion at the foot of the protrusion and in electrical connection with the contact unit. An Independent claim is also included for a process for the production of a composite made from a tested integrated circuit and an electrical unit.

公开(公告)号：DE102004021391A1

公开(公告)日：2005-11-24

申请号：DE102004021391

申请日：2004-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L21/225 ,  H01L21/336 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/78

Abstract: An integrated circuit comprises two semiconductor circuit surface (20a) regions, the first (31) comprising a CMOS and/or analog circuit and the second (32) a power component (40) with a vertical trench structure and adjacent mesa of breadth (DM) such that there is an enrichment in dopant concentration next (20) to the trench through a pile-up effect. An independent claim is also included for a production process for an integrated circuit as above.

公开(公告)号：DE102004015597A1

公开(公告)日：2005-11-03

申请号：DE102004015597

申请日：2004-03-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  WOLTER ANDREAS

IPC: H01L23/24 ,  H01L23/29 ,  H01L23/48 ,  H01L23/498

Abstract: Semiconductor system comprises a substrate (10) with a contact pad (11) which is connected by conductors (12) to connectors, e.g. solder beads (13). The system is encapsulated (14) on at least five sides and a mechanical decoupling system (15) is mounted between the encapsulation and the semiconductor. An independent claim is included for a method for making the semiconductor system.

公开(公告)号：DE10345395A1

公开(公告)日：2005-05-04

申请号：DE10345395

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  IRSIGLER ROLAND

IPC: H01L23/29 ,  H01L23/31 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50 ,  H01L27/108

公开(公告)号：DE10319538A1

公开(公告)日：2004-11-25

申请号：DE10319538

申请日：2003-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER ROLAND ,  HEDLER HARRY ,  MEYER THORSTEN

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/50 ,  H01L21/60

Abstract: A semiconductor device has a semiconductor substrate, at least a first and second rewiring device on a first surface of the semiconductor substrate for the provision of an electrical contact-connection of the semiconductor substrate, and a tapering, continuous opening from a first surface to a second, opposite surface of the semiconductor substrate. At least a third and fourth rewiring device is disposed on the second surface of the semiconductor substrate and a patterned metallization on the side areas of the opening for the separate contact-connection of the first and at least the second rewiring device.

公开(公告)号：DE10239080A1

公开(公告)日：2004-03-11

申请号：DE10239080

申请日：2002-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/485 ,  H01L23/48 ,  H01L23/04 ,  H01L23/50

Abstract: Integrated circuit (10) comprises an elastically deformable protrusion (11), a contact unit (13) formed on the protrusion to provide an electrical bond, and a rewiring unit (12) for electrically connecting an active semiconductor section of the circuit to the contact unit. The rewiring structure runs in a spiral manner on the protrusion and elastically deforms to contact an electrical unit. An Independent claim is also included for an alternative integrated circuit.

公开(公告)号：DE10137618A1

公开(公告)日：2003-02-27

申请号：DE10137618

申请日：2001-08-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GEBAUER UTA ,  STRUTZ VOLKER ,  MEYER THORSTEN

IPC: H01L23/10 ,  H01L25/065 ,  H01L23/04 ,  H01L23/50 ,  H05K5/03

Abstract: A protective device is described for subassemblies having a substrate and components disposed thereon and to be protected, for example semiconductor components. The protective device has at least one covering element for covering a subassembly, and at least one compression prevention element, which is disposed between the at least one covering element and the substrate and which is connected to the substrate and a surface of the covering element which faces the components and the substrate in such a way that a predefined spacing between covering element and the components to be protected can be maintained or is maintained.

公开(公告)号：DE10134011A1

公开(公告)日：2003-01-30

申请号：DE10134011

申请日：2001-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/498 ,  H05K1/02 ,  H05K3/32 ,  H05K3/34 ,  H05K3/40 ,  H01L23/50

Abstract: An elastic layer is located between the contacts and the first principal side (I) of the substrate layer (1)

公开(公告)号：DE10126568A1

公开(公告)日：2002-12-19

申请号：DE10126568

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/13 ,  H01L23/498 ,  H05K3/32

公开(公告)号：DE102021108926A1

公开(公告)日：2021-10-21

申请号：DE102021108926

申请日：2021-04-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ESCHER-PÖPPEL IRMGARD ,  MEYER THORSTEN ,  PÖPPEL GERHARD

IPC: G01R31/28

Abstract: Die Offenbarung beschreibt Techniken zum Ermitteln von Feldfehlern oder einer Verhaltensverschlechterung von Schaltungen einschließlich integrierter Schaltungen (IC) durch Einfügen zusätzlicher Kontakte, d.h. Anschlüsse, zusammen mit funktionalen Kontakten, die zum Verbinden der Schaltung mit einem System, von dem die Schaltung einen Teil darstellt, verwendet werden. Diese zusätzlichen Kontakte können verwendet werden, um eine dynamische Änderung elektrischer Eigenschaften im Verlaufder Zeit, z.B. Spannung, Strom, Temperatur und Impedanz, zu messen. Diese elektrischen Eigenschaften können bestimmte Fehler-Modi repräsentieren und sie können ein Hinweis auf den Befindlichkeitszustand („state-of-health“; SOH) der Schaltung, während die Schaltung auf dem Feld arbeitet, sein.