公开(公告)号：SG10201404208SA

公开(公告)日：2015-02-27

申请号：SG10201404208S

申请日：2014-07-18

Applicant: LAM RES CORP

Inventor： KIM KEECHAN ,  CHEN JACK ,  KIM YUNSANG ,  DELFIN KENNETH GEORGE

Abstract: A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.

公开(公告)号：SG182201A1

公开(公告)日：2012-07-30

申请号：SG2012043832

申请日：2008-05-20

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  KIM YUNSANG

Abstract: 33 Abstract of the Disclosure Methods of and Apparatus For Protecting A Region of Process Exclusion Adjacent To A Region of Process Performance In A Process ChamberApparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect thefield for desired protection.Figure 6

公开(公告)号：SG178004A1

公开(公告)日：2012-02-28

申请号：SG2012004966

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SEXTON GREGORY ,  KIM YUNSANG ,  KENNEDY WILLIAM S

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.Figure 3

公开(公告)号：SG166790A1

公开(公告)日：2010-12-29

申请号：SG2010078848

申请日：2004-12-30

Applicant: LAM RES CORP

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the innver surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described. Figures 3A and 3B