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    BACKSIDE DRILL EMBEDDED DIE SUBSTRATE
    31.
    发明申请
    BACKSIDE DRILL EMBEDDED DIE SUBSTRATE 审中-公开
    背侧钻嵌入式模具基板

    公开(公告)号：WO2017161199A1

    公开(公告)日：2017-09-21

    申请号：PCT/US2017/022829

    申请日：2017-03-16

    Applicant: QUALCOMM INCORPORATED

    Inventor： KIM, Daeik ,  FU, Jie ,  YUN, Changhan ,  KIM, Chin-Kwan ,  ALDRETE, Manuel ,  ZUO, Chengjie ,  VELEZ, Mario ,  KIM, Jonghae

    IPC: H01L23/538 ,  H01L23/48 ,  H01L21/768 ,  H01L23/498 ,  H01L21/48

    Abstract: A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.

    Abstract translation: 提供了一种装置和制造方法。 该装置包括具有第一侧和相对的第二侧的基板，限定在基板内从第一侧开始的空腔，耦合到空腔的底板并且在远离地板的管芯侧上具有导电垫的管芯 的空腔。 可以包括耦合到衬底的第二侧的层压层。 一次可以钻出一个孔，穿过器件的各层，穿过模具，并穿过导电垫。 该孔延伸穿过并被限定在层压层（如果存在）内，衬底的第二侧，管芯和导电垫内。 导电材料设置在孔内并且在层压层（如果提供的话），衬底的第二侧，管芯和导电垫之间并穿过层压层延伸。

    ACOUSTIC RESONATOR DEVICE ENCAPSULATED WITH AN INDUCTOR
    33.
    发明申请
    ACOUSTIC RESONATOR DEVICE ENCAPSULATED WITH AN INDUCTOR 审中-公开
    用电感器包封的声学谐振器装置

    公开(公告)号：WO2017087159A1

    公开(公告)日：2017-05-26

    申请号：PCT/US2016/059853

    申请日：2016-11-01

    Applicant: QUALCOMM INCORPORATED

    Inventor： YUN, Changhan Hobie ,  ZUO, Chengjie ,  KIM, Daeik Daniel ,  VELEZ, Mario Francisco ,  MUDAKATTE, Niranjan Sunil ,  LAN, Je-Hsiung Jeffrey ,  BERDY, David Francis ,  MA, Yunfei ,  MIKULKA, Robert Paul ,  KIM, Jonghae

    IPC: H03H9/05 ,  H03H9/10 ,  H01F17/00 ,  H03H3/007 ,  H03H7/01 ,  H03H7/46

    CPC classification number: H03H9/542 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/0026 ,  H03H3/02 ,  H03H3/08 ,  H03H7/0123 ,  H03H7/461 ,  H03H9/0547 ,  H03H9/0557 ,  H03H9/0561 ,  H03H9/1014 ,  H03H9/1071 ,  H03H9/64 ,  H05K1/0306 ,  H05K1/185 ,  H05K3/0014 ,  H05K3/4602

    Abstract: A device includes an acoustic resonator (220) embedded within an encapsulating structure (202) that at least partially encapsulates the acoustic resonator (204). The device includes an inductor (211, 229, 231, 233, 235, 212, 213, 214, and 215) electrically connected to the acoustic resonator. At least a portion of the inductor (211, 229, 231, 233, and 235) is embedded in the encapsulating structure. The capacitor may comprise a metal-insulator-metal, MIM, capacitor including a first metal layer (215) and a second metal layer (253). The inductor may include an interconnect (211, 229, 231, 233) disposed proximate to the encapsulating structure, and the first metal layer of the MIM capacitor may include the interconnect. The acoustic resonator may include a resonator structure (208) and a capping layer (228) between the resonator structure (208) and the encapsulating structure, the capping layer defining a cavity (227) in which the resonator structure is configured to vibrate. The encapsulating structure may be formed by using a glass molding process to enclose the acoustic resonator in a glass substrate.

    Abstract translation: 装置包括嵌入封装结构（202）内的声谐振器（220），所述封装结构（202）至少部分地封装声谐振器（204）。 该装置包括电连接到声共振器的电感器（211,229,231,233,235,212,213,214和215）。 电感器（211,229,231,233和235）的至少一部分嵌入封装结构中。 电容器可以包括包括第一金属层（215）和第二金属层（253）的金属 - 绝缘体 - 金属MIM电容器。 电感器可以包括设置在封装结构附近的互连（211,229,231,233），并且MIM电容器的第一金属层可以包括互连。 声谐振器可以包括谐振器结构（208）和位于谐振器结构（208）和封装结构之间的覆盖层（228），覆盖层限定谐振器结构被配置成振动的空腔（227）。 封装结构可以通过使用玻璃成型工艺将声共振器封装在玻璃衬底中来形成。

    NESTED THROUGH GLASS VIA TRANSFORMER
    39.
    发明申请
    NESTED THROUGH GLASS VIA TRANSFORMER 审中-公开
    通过变压器通过玻璃镶嵌

    公开(公告)号：WO2015108652A1

    公开(公告)日：2015-07-23

    申请号：PCT/US2014/070851

    申请日：2014-12-17

    Applicant: QUALCOMM INCORPORATED

    Inventor： KIM, Daeik, Daniel ,  KIM, Jonghae ,  ZUO, Chengjie ,  VELEZ, Mario, Francisco ,  YUN, Changhan, Hobie

    IPC: H01F27/28

    CPC classification number: H01F41/041 ,  H01F27/2804 ,  H01F41/00 ,  H01F2017/0086 ,  H01F2027/2809 ,  H01L2924/0002 ,  Y10T29/4902 ,  H01L2924/00

    Abstract: A 3D nested transformer includes a substrate having a set of through substrate vias daisy chained together with a set of traces. At least some of the through substrate vias have first and second conductive regions. The set of traces also includes a first set of traces coupling together at least some of the first conductive regions of the through substrate vias, and a second set of traces coupling together at least some of the second conductive regions of the through substrate vias.

    Abstract translation: 3D嵌套变压器包括具有与一组迹线菊花链连接的一组通过衬底通孔的衬底。 至少一些直通衬底通孔具有第一和第二导电区域。 该组迹线还包括将至少一些贯穿衬底通孔的第一导电区域耦合在一起的第一组迹线，以及将至少一些第二导电区域耦合在一起的第二组迹线。

    INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE
    40.
    发明申请
    INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE 审中-公开
    集成无源设备（IPD）

    公开(公告)号：WO2015023696A1

    公开(公告)日：2015-02-19

    申请号：PCT/US2014/050776

    申请日：2014-08-12

    Applicant: QUALCOMM INCORPORATED

    Inventor： KIM, Daeik Daniel ,  SONG, Young Kyu ,  YUN, Changhan Hobie ,  VELEZ, Mario Francisco ,  ZUO, Chengjie ,  KIM, Jonghae ,  ZHANG, Xiaonan ,  LANE, Ryan David

    IPC: H01L23/498 ,  H01L23/50

    CPC classification number: H01L23/49827 ,  H01L21/76885 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5222 ,  H01L23/642 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/16225 ,  H01L2225/06572 ,  H01L2924/19105

    Abstract: Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.

    Abstract translation: 一些新颖的特征涉及一种半导体器件，其包括衬底，穿过衬底的第一腔体。 第一腔被配置为被互连材料（例如，焊球）占据。 衬底还包括耦合到第一腔的第一侧壁的第一金属层。 衬底还包括在衬底的第一表面上的第一集成无源器件（IPD），第一IPD耦合到第一金属层。 在一些实施方案中，基底是玻璃基底。 在一些实现中，第一IPD是至少一个电容器，电感器和/或电阻器中的一个。 在一些实施方式中，半导体器件还包括在衬底的第二表面上的第二集成无源器件（IPD）。 第二IPD耦合到第一金属层。

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