公开(公告)号：AU2012340098B2

公开(公告)日：2016-04-21

申请号：AU2012340098

申请日：2012-11-20

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  WINGERT MICHAEL

IPC: H01L31/042 ,  G05F1/67

Abstract: A back contact solar cell with on-cell electronics is provided. The back contact solar cell is comprised of a semiconductor substrate having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization pattern is positioned on the backside of the semiconductor substrate and a backplane supports and is attached to the backside of the semiconductor substrate. A second interdigitated metallization pattern positioned on the backplane and is connected to the first interdigitated metallization pattern. An on-cell electronic component is attached to the second interdigitated metallization pattern and electrical leads connect the on-cell electronic component to the second interdigitated metallization pattern.

公开(公告)号：AU2015210451A1

公开(公告)日：2015-09-03

申请号：AU2015210451

申请日：2015-08-07

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  KAPUR PAWAN ,  SEUTTER SEAN ,  FATEMI HOMI

IPC: H01L21/205 ,  H01L31/04

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport 5 system moves the workpiece positioned in a batch carrier plat through the controlled atmospheric region.

公开(公告)号：AU2013237992A1

公开(公告)日：2014-11-13

申请号：AU2013237992

申请日：2013-03-28

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  RATTLE BENJAMIN E ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN

IPC: H01L31/042 ,  B23K26/36 ,  G01N21/65 ,  H01L31/18

Abstract: Methods and structures for fabricating photovoltaic back contact solar cells having multilevel metallization using laser via drilling end point detection are provided.

公开(公告)号：AU2013225860A1

公开(公告)日：2014-10-16

申请号：AU2013225860

申请日：2013-02-28

Applicant: SOLEXEL INC

Inventor： KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/0735 ,  H01L31/18

Abstract: Methods and structures are provided for the growth and separation of a relatively thin layer crystalline compound semiconductor material containing III-V device layers, including but not limited to Gallium Arsenide (GaAs), on top of a crystalline silicon template wafer. Solar cell structures and manufacturing methods based on the crystalline compound semiconductor material are described.

公开(公告)号：AU2012340098A2

公开(公告)日：2014-07-10

申请号：AU2012340098

申请日：2012-11-20

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  WINGERT MICHAEL

IPC: H01L31/042 ,  G05F1/67

Abstract: A back contact solar cell with on-cell electronics is provided. The back contact solar cell is comprised of a semiconductor substrate having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization pattern is positioned on the backside of the semiconductor substrate and a backplane supports and is attached to the backside of the semiconductor substrate. A second interdigitated metallization pattern positioned on the backplane and is connected to the first interdigitated metallization pattern. An on-cell electronic component is attached to the second interdigitated metallization pattern and electrical leads connect the on-cell electronic component to the second interdigitated metallization pattern.

公开(公告)号：AU2012294932A1

公开(公告)日：2014-03-27

申请号：AU2012294932

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：WO2015017592A3

公开(公告)日：2015-03-26

申请号：PCT/US2014048989

申请日：2014-07-30

Applicant: SOLEXEL INC ,  STALCUP THOM ,  MOSLEHI MEHRDAD M ,  PAWAN KAPUR ,  KAMRAN MANTEGHI ,  DUTTON DAVID

Inventor： STALCUP THOM ,  MOSLEHI MEHRDAD M ,  PAWAN KAPUR ,  KAMRAN MANTEGHI ,  DUTTON DAVID

IPC: H01L31/18 ,  B23K26/36

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  Y02E10/547

Abstract: A back contact solar cell structure having a light receiving frontside and a metallized backside of on-cell patterned base and emitter metallization electrically connected to base and emitter regions on a back contact solar cell semiconductor substrate. A backplane laminate layer made of resin and fibers and having a coefficient of thermal expansion relatively matched to the back contact solar cell semiconductor substrate is attached to the on-cell base and emitter metallization and to portions of the back contact solar cell semiconductor substrate not covered by the on-cell base and emitter metallization.

Abstract translation: 一种背接触太阳能电池结构，其具有光接收前侧和金属化的背侧上的电池上图案化的基极和发射极金属化部，其电连接到背接触太阳能电池半导体基板上的基极和发射极区。 将由树脂和纤维制成并且具有与背接触太阳能电池半导体衬底相对匹配的热膨胀系数的背板层压板层附接到on-cell基极和发射极金属化部，并且将背接触太阳能电池半导体衬底的部分未覆盖 通过on-cell基极和发射极金属化。

公开(公告)号：WO2013022479A3

公开(公告)日：2013-05-16

申请号：PCT/US2012000348

申请日：2012-08-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。

公开(公告)号：WO2012166749A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039901

申请日：2012-05-29

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.

Abstract translation: 在薄膜半导体太阳能电池上形成背接触薄膜太阳能电池。 优选地，薄膜半导体材料包括晶体硅。 通过离子注入和退火工艺形成发射极区域，选择性发射极区域和背表面场。

公开(公告)号：WO2011156657A3

公开(公告)日：2012-06-28

申请号：PCT/US2011039877

申请日：2011-06-09

Applicant: SOLEXEL INC ,  KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

Abstract translation: 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。