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    Micro-electro-mechanical device, in particular micro-actuator for hard-disk drive, and manufacturing process thereof
    36.
    发明公开
    Micro-electro-mechanical device, in particular micro-actuator for hard-disk drive, and manufacturing process thereof 有权
    微机电元件，特别是微致动器为硬盘单元，以及处理其制备

    公开(公告)号：EP1375416A1

    公开(公告)日：2004-01-02

    申请号：EP02425407.0

    申请日：2002-06-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Murari, Bruno ,  Ferrari, Paolo ,  Sassolini, Simone

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  H02N1/006

    Abstract: A micro-electro-mechanical device (20) formed by a body (4) of semiconductor material having a thickness and defining a mobile part (23, 24, 31) and a fixed part (3, 25, 30). The mobile part is formed by a mobile platform (23), supporting arms (31) extending from the mobile platform to the fixed part (3, 25, 30), and by mobile electrodes (24) fixed to the mobile platform. The fixed part has fixed electrodes (25) facing the mobile electrodes (24), a first biasing region (3) fixed to the fixed electrodes, a second biasing region (30) fixed to the supporting arms (31), and an insulation region (6) of insulating material extending through the entire thickness of the body (4). The insulation region (6) insulates electrically at least one between the first and the second biasing regions (3, 30) from the rest of the fixed part.

    Abstract translation: 通过具有一定厚度和一个移动限定部分（23，24，31）和固定部件（3，25，30）的半导体材料的本体（4）形成的微机电装置（20）。 移动部分由可移动平台（23）而形成，支持从移动平台延伸到所述固定部件（3，25，30）臂（31），并且通过可移动电极（24）固定到所述移动平台。 固定部分具有固定的电极（25）的面向所述移动电极（24），第一偏置区域（3）固定到所述固定电极，固定在所述支撑臂（31）的第二偏置区域（30），并在绝缘区域 （6）绝缘材料穿过所述主体（4）的整个厚度延伸的。 绝缘区域（6）电绝缘所述第一，并从固定部分的其余部分的第二偏置区域（3，30）之间的至少一个。

    Process for manufacturing a through insulated interconnection in a body of semiconductor material
    37.
    发明公开
    Process for manufacturing a through insulated interconnection in a body of semiconductor material 有权
    一种用于制备经由穿过半导体主体分离和相关联的半导体器件的工艺

    公开(公告)号：EP1351288A1

    公开(公告)日：2003-10-08

    申请号：EP02425207.4

    申请日：2002-04-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Ferrari, Paolo

    IPC: H01L21/768

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

    Abstract: The process for manufacturing a through insulated interconnection is performed by forming, in a body (1) of semiconductor material, a trench (2) extending from the front (7) of the body (1) for a thickness portion thereof; filling the trench with dielectric material (6); thinning the body starting from the rear (5) until the trench (2), so as to form an insulated region (3) surrounded by dielectric material; and forming a conductive region (8, 25, 28, 30b) extending inside said insulated region (3) between the front and the rear of the body and having a higher conductivity than the first body (1). The conductive region (8, 25, 28, 30b) includes a metal region (25, 28) extending in an opening (24) formed inside the insulated region (3) or of a heavily doped semiconductor region (30b), made prior to filling of the trench.

    Abstract translation: 通过绝缘互连制造过程中进行，通过形成在一个主体（1）的半导体材料，沟槽（2）从前面（7）延伸的本体（1），用于其厚度部分; 用介电材料填充所述沟槽（6）; 减薄体从后部（5）开始直到沟槽（2），从而在绝缘区，以形成（3）由介电材料包围; 和形成导电区域（8，25，28，30B）延伸在所述绝缘区域（3）的前部和主体的后部，并且具有比所述第一主体上的较高的电导率（1）之间。 导电区域（8，25，28，30B）包括上开口延伸在金属区（25，28）（24）的绝缘区域内形成（3）或重掺杂的半导体区（30B）由之前 填充沟槽。

    Method for manufacturing integrated devices including electromechanical microstructures, without residual stress
    40.
    发明公开
    Method for manufacturing integrated devices including electromechanical microstructures, without residual stress 有权
    一种用于生产具有机电微结构集成器件过程中，没有残余应力

    公开(公告)号：EP1028466A1

    公开(公告)日：2000-08-16

    申请号：EP99830068.5

    申请日：1999-02-09

    Applicant: STMicroelectronics S.r.l.

    Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Montanini, Pietro ,  Castoldi, Laura ,  Ferrera, Marco

    IPC: H01L27/00 ,  G01P1/00

    CPC classification number: B81B3/0072 ,  B81B2203/033 ,  B81C1/00666 ,  B81C2201/017 ,  G01P15/0802 ,  G01P2015/0828

    Abstract: On a substrate (20) of semiconductor material, a sacrificial region (21) is formed and an epitaxial layer (25) is grown; then a stress release trench (31) is formed, surrounding an area (33) of the epitaxial layer (25), where an integrated electromechanical microstructure is to be formed; the wafer (28) is then heat treated, to release residual stress. Subsequently, the stress release trench (31) is filled with a sealing region (34) of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region (34), a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.

    Abstract translation: 上的半导体材料的基片（20），牺牲区域（21）被形成和外延层（25）上生长; 外延层（25），其中，在集成式机电微观结构是将要形成的那么应力释放槽（31）形成，周边区域（33）; 晶片（28）进行热处理，以释放残余应力。 接着，应力释放槽（31）中填充有电介质材料制成的密封区域（34），和集成的部件而形成。 最后，通过密封区域（34）包围的区域内，微结构定义沟槽中形成，并且所述牺牲区域被去除，因此，与零张残余应力获得集成微结构。

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