公开(公告)号：EP1345844B1

公开(公告)日：2009-11-04

申请号：EP01993334.0

申请日：2001-12-20

Applicant: Honeywell International Inc.

Inventor： CABUZ, Cleopatra ,  RIDLEY, Jeffrey, Alan

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019 ,  H01L27/12 ,  H01L27/1203

Abstract: Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.

公开(公告)号：EP1203748A1

公开(公告)日：2002-05-08

申请号：EP00900814.5

申请日：2000-01-19

Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

Inventor： YOSHIDA, Yukihisa, Mitsubishi Denki KK ,  CHABLOZ, Martial, Mitsubishi Denki KK ,  JIAO, Jiwei, Mitsubishi Denki KK ,  MATSUURA, Tsukasa, Mitsubishi Denki KK ,  TSUTSUMI, Kazuhiko, Mitsubishi Denki KK

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/125 ,  G02B26/08 ,  H01L29/84

CPC classification number: G01P15/125 ,  B81B2201/0228 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00579 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10T29/49002 ,  Y10T29/49117

Abstract: A micro-device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The micro device also has an electrically conductive film electrically connected with the supporting section and formed on the surface of the recess at least in a portion right under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus the etching gas having positive charge is not subjected to electrical repulsion of the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in the shape and dimensions, the micro device of the present invention can improve a high reliability and a degree of freedom in design of the micro device.

Abstract translation: 一种微型器件，包括在其表面上形成有凹部的绝缘衬底和形成在绝缘衬底的前表面上以围绕凹部的由硅制成的梁状结构。 梁状结构包括至少一个功能部分，并且功能部分具有结合到绝缘基板上的支撑部分和至少一个与支撑部分一体形成的悬臂，同时延伸穿过凹部。 微型装置还具有与支撑部分电连接并且至少在垂直于悬臂下方的部分形成在凹部的表面上的导电膜。 导电膜防止在干蚀刻工艺中凹部的表面带正电。 因此，具有正电荷的蚀刻气体不会受到凹陷的电斥斥，并且不会撞击到硅衬底的背面，因此不会发生悬臂的侵蚀。 结果，由于在形状和尺寸上高精度地形成束状结构，所以本发明的微型器件可以提高微型器件的高可靠性和设计自由度。

公开(公告)号：WO2017058335A1

公开(公告)日：2017-04-06

申请号：PCT/US2016/041954

申请日：2016-07-13

Applicant: GENERAL ELECTRIC COMPANY

Inventor： BREWER, Joleyn, Eileen ,  KEIMEL, Christopher, Fred ,  AIMI, Marco, Francesco ,  MINNICK, Andrew, James ,  RUFFALO, Renner, Stephen

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B3/0075 ,  B81B7/0003 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2201/0228 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/053 ,  B81B2207/015 ,  B81B2207/115 ,  B81C1/00134 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00373 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0044

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

Abstract translation: 一种用于微电子机械系统（MEMS）装置的系统和方法，其包括形成在基板上的基板和独立悬挂的电镀金属MEMS结构。 独立悬挂的电镀金属MEMS结构包括机械耦合到基底的金属机械元件和机械耦合到机械元件并与之机电连接的种子层，种子层包括难熔金属和耐火材料中的至少一种 金属合金，其中机械元件的厚度基本上大于种子层的厚度，使得独立和悬浮的电镀金属MEMS结构的机械和电学性质由机械元件的材料特性限定。

公开(公告)号：WO2016057007A1

公开(公告)日：2016-04-14

申请号：PCT/US2014/026562

申请日：2014-03-13

Applicant: GOGOI, Bishnu

Inventor： GOGOI, Bishnu

IPC: H01L27/14

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

公开(公告)号：WO02051743A2

公开(公告)日：2002-07-04

申请号：PCT/US2001/050464

申请日：2001-12-20

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019

Abstract: Methods for making thin silicon layers 20 suspended over recesses 30 in glass wafers or substrates 22 are disclosed. One embodiment of the present invention includes providing a thin silicon wafer 20, and a glass wafer or substrate 22. Recesses 30 are formed in one surface 24 of the glass wafer 22, and electrodes 38 are formed in the recesses 30. The silicon wafer 20 is then bonded to the glass wafer 22 over the recesses 30. The silicon wafer 20 is then etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer 120 has a patterned metal layer 129. The silicon wafer 120 is bonded to the glass wafer 22, with the patterned metal layer 129 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 is selectively etched down to the metal layer 129. The metalized layer 129 may serve to seal gasses within the recessed cavities 30 of the glass wafer 22 during the silicon etching process. The metal layer 129 can then be subsequently removed.

Abstract translation: 公开了制造悬浮在玻璃晶片或基板22中的凹槽30上的薄硅层20的方法。 本发明的一个实施例包括提供薄硅晶片20和玻璃晶片或基板22.凹部30形成在玻璃晶片22的一个表面24中，并且电极38形成在凹部30中。硅晶片20 然后在凹槽30上结合到玻璃晶片22.然后蚀刻硅晶片20以赋予所需的悬浮或硅晶片结构。 在本发明的另一个实施例中，硅晶片120具有图案化的金属层129.硅晶片120结合到玻璃晶片22上，图案化的金属层129邻近玻璃晶片22中的凹槽30定位。硅 晶片120定位成邻近玻璃晶片22中的凹部30.硅晶片120被选择性地向下蚀刻到金属层129.金属化层129可用于在硅蚀刻期间将气体密封在玻璃晶片22的凹腔30内。 处理。 然后可以随后去除金属层129。

公开(公告)号：EP3248936A1

公开(公告)日：2017-11-29

申请号：EP15894015.5

申请日：2015-12-14

Applicant: Goertek Inc.

Inventor： ZHENG, Guoguang

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B7/0061 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00269 ,  G01L9/12 ,  G01L19/04 ,  G01P15/125

Abstract: The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.

Abstract translation: 本发明公开了一种MEMS压力传感器与MEMS惯性传感器的集成结构，包括：形成在基板上的绝缘层，均形成在绝缘层上的第一下电极和第二下电极，还包括第一上电极 与第一下电极一起形成空气压敏电容器，以及与第二下电极一起形成参考电容器的第二上电极; 还包括由第三支撑部分支撑在所述基板上方的惯性敏感结构以及与所述惯性敏感结构一起形成惯性传感器的惯性检测电容器的固定电极板; 以及将由惯性敏感结构和固定电极板组成的惯性检测电容器封装在基板上的盖体。 本发明的集成结构将MEMS惯性传感器和MEMS压力传感器集成在同一个基板上，可以有效减小芯片面积，从而降低芯片成本。 单一封装可以完成整个芯片的封装并降低芯片封装的成本。

公开(公告)号：EP3184962A1

公开(公告)日：2017-06-28

申请号：EP16198839.9

申请日：2016-11-15

Applicant: NXP USA, Inc.

Inventor： Shao, Peng

IPC: G01C19/5733 ,  B81B5/00 ,  G01P15/125

CPC classification number: G01C19/5712 ,  B81B3/0078 ,  B81B5/00 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/04 ,  B81B2203/055 ,  B81B2207/03 ,  G01C19/5733

Abstract: A MEMS device includes a mass system capable of undergoing oscillatory drive motion along a drive axis and oscillatory sense motion along a sense axis perpendicular to the drive axis. A quadrature correction unit includes a fixed electrode and a movable electrode coupled to the movable mass system, each being lengthwise oriented along the drive axis. The movable electrode is spaced apart from the fixed electrode by a gap having an initial width. At least one of the fixed and movable electrodes includes an extrusion region extending toward the other of the fixed and movable electrodes. The movable electrode undergoes oscillatory motion with the mass system such that the extrusion region is periodically spaced apart from the other of the fixed and movable electrodes by a gap exhibiting a second width that is less than the first width thereby enabling capacitance enhancement between the electrodes.

Abstract translation: MEMS装置包括质量系统，该质量系统能够沿着驱动轴进行振荡驱动运动并且沿着垂直于驱动轴的感测轴进行振荡感测运动。 正交校正单元包括固定电极和耦合到可移动质量系统的可移动电极，每个沿着驱动轴纵向取向。 可动电极通过具有初始宽度的间隙与固定电极间隔开。 固定电极和可动电极中的至少一个包括朝向固定电极和可动电极中的另一个延伸的挤出区域。 可移动电极与质量体系进行振荡运动，使得挤出区域与固定电极和可移动​​电极中的另一个周期性地间隔开具有第二宽度的间隙，该第二宽度小于第一宽度，由此能够增强电极之间的电容。

公开(公告)号：EP3006396A1

公开(公告)日：2016-04-13

申请号：EP15188710.6

申请日：2015-10-07

Applicant: InvenSense, Inc.

Inventor： LEE, Daesung ,  SHIN, Jongwoo ,  SHIN, Jong Il ,  SMEYS, Peter ,  LIM, Martin

IPC: B81B7/02 ,  B81B7/00

CPC classification number: B81C1/0023 ,  B81B7/0038 ,  B81B7/0041 ,  B81B7/02 ,  B81B2201/0228 ,  B81B2207/017 ,  B81C1/00285 ,  B81C2203/019 ,  B81C2203/035 ,  B81C2203/0785

Abstract: An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

Abstract translation: 一种集成MEMS装置包括两个基板，其中第一和第二基板之间耦合在一起，并且具有两个外壳那里。 一个在第一和第二衬底均包括在除气源极层和除气阻挡层以在两个外壳内调节压力。 该方法包括沉积和放气源层和在脱气基板的第一阻挡层，在两个横截面所得的图案化。 在两个交叉部分中的一个放气源层的顶部表面不被放气阻挡层和在所述两个横截面脱气源层被封装脱气阻挡层中的覆盖。 因此，该方法包括共形地沉积第二脱气阻挡层和蚀刻所述第二阻挡层放气搜索做了第二脱气阻挡层的间隔物留在脱气源层的侧壁上。

公开(公告)号：EP1345844A2

公开(公告)日：2003-09-24

申请号：EP01993334.0

申请日：2001-12-20

Applicant: Honeywell International Inc.

Inventor： CABUZ, Cleopatra ,  RIDLEY, Jeffrey, Alan

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019 ,  H01L27/12 ,  H01L27/1203

Abstract: Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.

公开(公告)号：EP3248936A4

公开(公告)日：2018-04-25

申请号：EP15894015

申请日：2015-12-14

Applicant: GOERTEK INC

Inventor： ZHENG GUOGUANG

IPC: B81B7/02 ,  G01L9/12

CPC classification number: B81B7/02 ,  B81B3/0021 ,  B81B7/0061 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00269 ,  G01L9/12 ,  G01L19/04 ,  G01P15/125

Abstract: The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.