Abstract:
A device for converting the kinetic energy of molecules into useful work includes an actuator configured to move within a fluid or gas due to collisions with the molecules of the fluid or gas. The actuator has dimensions that subject it to the Brownian motion of the surrounding molecules. The actuator utilizes objects having multiple surfaces where the different surfaces result in differing coefficients of restitution. The Brownian motion of surrounding molecules produce molecular impacts with the surfaces. Each surface then experiences relative differences in transferred energy from the kinetic collisions. The sum effect of the collisions produces net velocity in a desired direction. The controlled motion can be utilized in a variety of manners to perform work, such as generating electricity or transporting materials.
Abstract:
The present invention discloses, inter alia, a micro-electromechanical device (MEMD) for sensing and for harvesting electrical energy responsive to being subjected to mechanical forces, comprising at least one first conductive element fixedly mounted on a first support, wherein the at least one first conductive element is chargeable with electrons; and at least one second conductive element inertia-mounted on a second support such that the first and second supports are electrically isolated from each other.
Abstract:
A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 35O°C, and potentially to below 25O°C, thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Abstract:
Es wird ein elektrostatischer Mikrogenerator (1) mit doppellagig übereinander angeordneten Elektretfolien (2, 22) mit jeweils einer einseitig darauf angeordneten metallischen Schicht als Elektrode beschrieben. Die Folien sind locker gewickelt in einer hermetische abgedichteten Hülle eingelagert. Mittels Druckbeaufschlagung auf eine erste Solldruckfläche (8), die parallel zu den so gebildeten Kondensatorplatten (3, 4) außenliegend vorgesehen wird, ist eine elektrische Spannung durch eine Veränderung des Abstands der Kondensatorplatten (3, 4) erzeugbar.
Abstract:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through said substrate (10) having first (16a) and second (16b) end surfaces, said first end surface (16a) constituting an transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) comprising a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Abstract:
The invention describes an electrostatic microgenerator (1) having electret films (2, 22) which are arranged above one another in a double layer and each have a metal layer arranged on one side thereof as an electrode. The films are embedded in a hermetically sealed casing in a loosely wound manner. Applying pressure to a first desired pressure surface (8), which is provided on the outside parallel to the capacitor plates (3, 4) formed in this manner, makes it possible to generate an electrical voltage by changing the distance between the capacitor plates (3, 4).
Abstract:
The present invention relates to a semiconductor device, comprising a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through said substrate (10) having first (16a) and second (16b) end surfaces, said first end surface (16a) constituting an transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) comprising a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Abstract:
MEMS dies embedded in glass cores of integrated circuit (IC) package substrates are disclosed. An example integrated circuit (IC) package includes a package substrate including a glass core, the example integrated circuit (IC) package also includes a micro electromechanical system (MEMS) die positioned in a cavity of the glass core.
Abstract:
A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.