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    Method for manufacturing a micro-electro-mechanical structure
    31.
    发明公开
    Method for manufacturing a micro-electro-mechanical structure 有权
    Verfahren zum Herstellen einer mikroelectromechanischen Struktur

    公开(公告)号：EP1770056A2

    公开(公告)日：2007-04-04

    申请号：EP06076692.0

    申请日：2006-09-07

    Applicant: Delphi Technologies, Inc.

    Inventor： Chilcott, Dan W.

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00531 ,  B81B2203/033 ,  B81C2201/0132 ,  B81C2201/0142

    Abstract: A technique (500) for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided (502). Next, a plurality of trenches are etched into the substrate with a first etch (508). Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches (510). Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches (512). The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

    Abstract translation: 用于制造微机电（MEM）结构的技术（500）包括多个步骤。 首先，提供基板（502）。 接下来，通过第一蚀刻（508）将多个沟槽蚀刻到衬底中。 然后，在每个沟槽的底部形成充电层以形成底切槽（510）。 最后，在底切沟槽中提供第二蚀刻。 充电层使得第二蚀刻在底切沟槽（512）之间横向蚀刻衬底中的脚。 底脚底切基板以释放基板的一部分，以在底切沟槽和页脚之上提供可移动结构。

    METHOD FOR MANUFACTURING A MICRO-ELECTROMECHANICAL DEVICE AND MICRO-ELECTROMECHANICAL DEVICE OBTAINED THEREWITH
    32.
    发明公开
    METHOD FOR MANUFACTURING A MICRO-ELECTROMECHANICAL DEVICE AND MICRO-ELECTROMECHANICAL DEVICE OBTAINED THEREWITH 审中-公开
    方法用于生产具有这产生微机电器件微机电装置及方法

    公开(公告)号：EP1556307A1

    公开(公告)日：2005-07-27

    申请号：EP03751132.6

    申请日：2003-10-17

    Applicant: Koninklijke Philips Electronics N.V.

    Inventor： VAN BEEK, Jozef, T., M. ,  VAN GROOTEL, Margot

    IPC: B81C1/00

    CPC classification number: B81C1/00595 ,  B81B2203/0323 ,  B81C2201/0142

    Abstract: The invention relates to a method of manufacturing a micro-electromechanical device ( 10 ), in which are consecutively deposited on a substrate ( 1 ) a first electroconductive layer ( 2 ) in which an electrode ( 2 A) is formed, a first electroinsulating layer ( 3 ) of a first material, a second electroinsulating layer ( 4 ) of a second material different from the first material, and a second electroconductive layer ( 5 ) in which a second electrode ( 5 A) lying opposite the first electrode is formed which together with the first electrode ( 2 A) and the first insulating layer ( 3 ) forms the device ( 10 ), in which after the second conductive layer ( 5 ) deposited, the second insulating layer ( 4 ) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer ( 5 ). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer ( 4 ) a further layer ( 6 ) is provided on top of the first insulating layer ( 3 ) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers ( 3, 4 ) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer ( 4 ) is preferably removed locally by etching, then the further layer ( 6 ) is completely removed by etching and, finally, the second insulating layer ( 4 ) is completely removed by etching.

    METHOD FOR RECESS ETCHING IN MICROMECHANICAL DEVICES
    36.
    发明公开
    METHOD FOR RECESS ETCHING IN MICROMECHANICAL DEVICES 审中-公开

    公开(公告)号：EP3409639A1

    公开(公告)日：2018-12-05

    申请号：EP18174480.6

    申请日：2018-05-28

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： FUJII, Hidetoshi

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00587 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0142 ,  B81C2201/0198 ,  B81C2201/053

    Abstract: The disclosure relates to a method for manufacturing recessed micromechanical structures in a MEMS device wafer. First vertical trenches in the device wafer define the horizontal dimensions of both level and recessed structures. The horizontal face of the device wafer and the vertical sidewalls of the first vertical trenches are then covered with a self-supporting etching mask which is made of a self-supporting mask material, which is sufficiently rigid to remain standing vertically in the location where it was deposited even as the sidewall upon which it was deposited is etched away. Recess trenches are then etched under the protection of the self-supporting mask. The method allows a spike-preventing aggressive etch to be used for forming the recess trenches, without harming the sidewalls in the first vertical trenches.

    MEMS-BASED METHOD FOR MANUFACTURING SENSOR
    37.
    发明公开
    MEMS-BASED METHOD FOR MANUFACTURING SENSOR 审中-公开
    MEMS基座VERFAHREN ZUR HERSTELLUNG EINES SENSORS

    公开(公告)号：EP3150548A1

    公开(公告)日：2017-04-05

    申请号：EP15800029.9

    申请日：2015-05-05

    Applicant: CSMC Technologies Fab1 Co., Ltd.

    Inventor： HU, Yonggang ,  ZHOU, Guoping

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

    Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

    Abstract translation: 用于制造传感器的基于MEMS的方法包括以下步骤：在衬底（100）的前表面上形成浅沟道（120）和支撑梁（140）; 在所述衬底（100）的前表面上形成第一外延层（200）以密封所述浅沟道（120）; 在所述第一外延层（200）下方形成悬浮网状结构（160）; 以及在与所述浅通道（120）对应的所述基板（100）的背面上的位置处形成深通道（180），使得所述浅通道（120）与所述深通道（180）连通。 在制造基于MEMS的传感器的方法中，当在前表面上形成浅沟道时，形成质量块的支撑梁，因此对沟道的蚀刻更容易控制，处理更精确，并且 形成的支撑梁的均匀性和均匀性更好。

    Method and system for xenon fluoride etching with enhanced efficiency
    38.
    发明公开
    Method and system for xenon fluoride etching with enhanced efficiency 审中-公开
    Methode und Anlage zumÄtzenmit Xenon-Fluorid mit verbesserter Effizienz

    公开(公告)号：EP1641026A2

    公开(公告)日：2006-03-29

    申请号：EP05255704.8

    申请日：2005-09-14

    Applicant: IDC, LLC

    Inventor： Cummings, William J. ,  Floyd, Philip D.

    IPC: H01L21/00 ,  B81C1/00 ,  G02B26/08

    CPC classification number: H01L21/3065 ,  B81B2201/047 ,  B81C1/00531 ,  B81C2201/0142 ,  B81C2201/056 ,  G02B26/001 ,  H01L21/32135 ,  H01L21/67069

    Abstract: Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

    Abstract translation: 本文提供了一种用于制造MEMS器件的装置和方法。 所公开的装置的一个方面提供了一种包括暴露于固态蚀刻剂的可蚀刻材料的衬底，其中衬底和固态蚀刻剂设置在蚀刻室中。 在一些实施例中，固态蚀刻剂被移动到靠近衬底的位置。 在其他实施例中，可配置分隔件在基板之间并且打开固态蚀刻剂。 固态蚀刻剂形成适于蚀刻可蚀刻材料的气相蚀刻剂。 在一些优选实施方案中，固态蚀刻剂是固体氙二氟化物。 该装置和方法有利地用于在光学调制器的制造中执行释放蚀刻。

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