Abstract:
A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.
Abstract:
Article of manufacture fabricated by plastic deformation of an intermetallic compound comprising R and M, such as an RM intermetallic compound and a higher order compound thereof, having a CsCl-type ordered crystal structure wherein R is one or more rare earth elements and M is one or more non-rare earth metals. The article of manufacture has a tensile elongation of at least about 5% prior to fracture when tensile tested at room temperature in ambient air. The article of manufacture also can be fabricated by plastic deformation of an intermetallic compound comprising a M′M compound and a higher order compound thereof having a CsCl-type ordered crystal structure wherein M′ and M are one or more different non-rare earth metals.
Abstract:
The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1null10null5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.
Abstract:
The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1null10null5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.
Abstract:
A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.
Abstract:
A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.
Abstract:
Es wird ein Verfahren zum Wideraufbereiten eines betriebsbedingt lokal geschädigten Bauteils (120) mit einer ursprünglich kubischen γ/γ' -Mikrostruktur, wobei die betriebsbedingte lokale Schädigung in einer entlang einer Ausdehnungsrichtung gerichteten Vergröberung der γ/γ' -Mikrostruktur besteht, zur Verfügung gestellt. In dem Verfahren wird die Ausdehnungsrichtung der gerichtet vergröberten γ/γ' -Mikrostruktur durch lokales Erwärmen und Einbringen einer Zug- und oder Druckspannung (503, 505), insbesondere im Bereich einer lokalen Schädigung des Bauteils, in ihrer Orientierung gedreht.
Abstract:
The invention relates to metallic articles for industrial use, more specifically to a method for producing a thin metallic monocrystalline wire having a diameter ranging from 0.01 to 5.0 mkm. The inventive method consists in carrying out the plastic deformation of a wire having a deformation rate of higher than 98 % by twisting two wires in spiral through time at a pitch angle ranging from 20 to 58 DEG with respect to the longitudinal axis thereof and at a predetermined twisting speed through time during the thermal processing and the cleaning of the thus produced wire from polycrystalline metal residuals. Said method is also characterised in that the shear plastic deformation of the wire at a deformation rate of higher than 98 % is carried out by twisting one wire about the longitudinal axis thereof when the metal is in a yielded state in such a way that filamentary crystals are formed. In individual cases, the deformation of metallic wire is carried out at a temperature ranging from (-200 DEG C) to 400 DEG C. All processing parameters are experimentally defined. The monocrystallinity of the wire is confirmed by X-ray analysis. In cases when the monocrystalline wire can not be used, the cleaning of a monocrystalline filament is carried out with the aid of a chemical method.
Abstract:
A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.