中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

103 records (took 0.022 seconds)

    BUFFER ARCHITECTURE FOR BIAXIALLY TEXTURED STRUCTURES AND METHOD OF FABRICATING SAME
    33.
    发明申请
    BUFFER ARCHITECTURE FOR BIAXIALLY TEXTURED STRUCTURES AND METHOD OF FABRICATING SAME 失效
    用于双色纹理结构的缓冲结构及其制造方法

    公开(公告)号：US20030143438A1

    公开(公告)日：2003-07-31

    申请号：US09406190

    申请日：1999-09-27

    Inventor： DAVID P. NORTON ,  CHAN PARK ,  AMIT GOYAL

    IPC: B32B015/04

    CPC classification number: C23C18/1216 ,  C21D8/12 ,  C21D2201/04 ,  C21D2201/05 ,  C23C14/028 ,  C23C18/14 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2454 ,  H01L39/2461 ,  H01L39/248 ,  Y10S428/93

    Abstract: The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1null10null5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

    Abstract translation: 本发明涉及一种具有改进的缓冲层结构的制品，其包括具有金属表面的基底和在基底表面上的外延缓冲层。 外延缓冲层包括由ZrO 2，HfO 2和具有稳定立方相的ZrO 2和/或HfO 2的Ca和稀土元素中的至少一种的化合物中的至少一种。 该物品还可以包括沉积在外延缓冲层上的超导层。 该制品还可以包括在外延缓冲层和超导层之间的外延覆盖层。 一种用于制备外延物品的方法包括：向基底提供金属表面;在所述金属表面上沉积包含至少一种选自ZrO 2，HfO 2和至少一种Ca和 稀土元素稳定ZrO 2和HfO 2中的至少一种的立方相。 外延层沉积步骤在背景压力不超过1×10 -5乇的真空中进行。 该方法还可以包括在外延层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。

    Method of fabricating improved buffer architecture for biaxially textured structures
    34.
    发明申请
    Method of fabricating improved buffer architecture for biaxially textured structures 审中-公开
    制造改进的双轴织构结构缓冲结构的方法

    公开(公告)号：US20020192508A1

    公开(公告)日：2002-12-19

    申请号：US10208229

    申请日：2002-07-30

    Inventor： David P. Norton ,  Chan Park ,  Amit Goyal

    IPC: H01L039/00 ,  B32B001/00 ,  H01L039/24 ,  B32B009/00 ,  B32B019/00

    CPC classification number: C23C18/1216 ,  C21D8/12 ,  C21D2201/04 ,  C21D2201/05 ,  C23C14/028 ,  C23C18/14 ,  C30B5/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2454 ,  H01L39/2461 ,  H01L39/248 ,  Y10S428/93

    Abstract: The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO2 and/or HfO2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO2, HfO2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO2 and HfO2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1null10null5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

    Abstract translation: 本发明涉及一种具有改进的缓冲层结构的制品，其包括具有金属表面的基底和在基底表面上的外延缓冲层。 外延缓冲层包括由ZrO 2，HfO 2和具有稳定立方相的ZrO 2和/或HfO 2的Ca和稀土元素中的至少一种的化合物中的至少一种。 该物品还可以包括沉积在外延缓冲层上的超导层。 该制品还可以包括在外延缓冲层和超导层之间的外延覆盖层。 一种用于制备外延物品的方法包括：向基底提供金属表面;在所述金属表面上沉积包含至少一种选自ZrO 2，HfO 2和至少一种Ca和 稀土元素稳定ZrO 2和HfO 2中的至少一种的立方相。 外延层沉积步骤在背景压力不超过1×10 -5乇的真空中进行。 该方法还可以包括在外延层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。

    METHOD FOR PRODUCING MONOCRYSTALLINE METALLIC WIRE
    39.
    发明申请
    METHOD FOR PRODUCING MONOCRYSTALLINE METALLIC WIRE 审中-公开
    生产单晶金属线的方法

    公开(公告)号：WO2003035915A1

    公开(公告)日：2003-05-01

    申请号：PCT/RU2002/000461

    申请日：2002-10-22

    IPC: C21D8/06

    CPC classification number: C30B1/02 ,  C21D8/06 ,  C21D2201/04 ,  C22F1/18 ,  C30B1/00 ,  C30B29/02 ,  C30B29/60 ,  C30B29/62 ,  Y02P10/212

    Abstract: The invention relates to metallic articles for industrial use, more specifically to a method for producing a thin metallic monocrystalline wire having a diameter ranging from 0.01 to 5.0 mkm. The inventive method consists in carrying out the plastic deformation of a wire having a deformation rate of higher than 98 % by twisting two wires in spiral through time at a pitch angle ranging from 20 to 58 DEG with respect to the longitudinal axis thereof and at a predetermined twisting speed through time during the thermal processing and the cleaning of the thus produced wire from polycrystalline metal residuals. Said method is also characterised in that the shear plastic deformation of the wire at a deformation rate of higher than 98 % is carried out by twisting one wire about the longitudinal axis thereof when the metal is in a yielded state in such a way that filamentary crystals are formed. In individual cases, the deformation of metallic wire is carried out at a temperature ranging from (-200 DEG C) to 400 DEG C. All processing parameters are experimentally defined. The monocrystallinity of the wire is confirmed by X-ray analysis. In cases when the monocrystalline wire can not be used, the cleaning of a monocrystalline filament is carried out with the aid of a chemical method.

    Abstract translation: 本发明涉及用于工业用途的金属制品，更具体地涉及一种直径范围为0.01至5.0m范围的薄金属单晶线材的制造方法。 本发明的方法包括通过以相对于其纵向轴线为20°至58°的间距角以螺旋形式扭转两根丝线来实现变形率高于98％的线材的塑性变形， 在热处理期间的预定扭转速度和由此产生的线从多晶金属残留物的清洁。 所述方法的特征还在于，当金属处于屈服状态时，以高于98％的变形率的线材的剪切塑性变形是通过围绕其纵轴扭转一根丝线，使得丝状晶体 形成。 在个别情况下，金属线的变形在（-200℃）至400℃的温度范围内进行。所有加工参数都是实验定义的。 线的单晶由X射线分析证实。 在不能使用单晶线的情况下，借助于化学方法进行单晶丝的清洗。

Patent Agency Ranking