OPTOELECTRONIC DEVICE USED TO MODULATE THE FLOW OF ELECTRONS
    32.
    发明授权
    OPTOELECTRONIC DEVICE USED TO MODULATE THE FLOW OF ELECTRONS 有权
    OPTO电子装置调节中的电子流

    公开(公告)号:EP1046179B1

    公开(公告)日:2004-11-17

    申请号:EP98962828.4

    申请日:1998-11-24

    CPC classification number: H01J1/304 H01J1/34 H01J3/021 H01J2201/317

    Abstract: An apparatus for high speed gating of electric current based on the resonant interaction of tunnelling electron with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip said tip having a coating for enhancing the effect of the optical field of the impinging laser. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.

    Optical pumping field emission type light-to-current converter
    33.
    发明公开
    Optical pumping field emission type light-to-current converter 有权
    Strom的Feldmissionsvorrichtung zur Umwandlung von Licht

    公开(公告)号:EP0921552A2

    公开(公告)日:1999-06-09

    申请号:EP98309975.5

    申请日:1998-12-04

    CPC classification number: H01J1/34 H01J2201/317

    Abstract: An optical pumping field emission type light-to-current converter is constructed by joining an optical wave guide material (1) through which light is propagated, a conductive transparent film (2), a semiconductor material or an insulating material (3), and a conductor material (4) to each other. The optical wave guide material may have a needle-like shape (6) which is obtained by sharpening the light emission guide side thereof. Thereby is obtained an optical pumping field emission type light-to-current converter having a simplified structure high sensitivity and high-speed response on the order of picoseconds (10 -12 seconds) due to a large field emission current.

    Abstract translation: 通过将传播光的光波导材料(1),导电透明膜(2),半导体材料或绝缘材料(3)接合而构成光泵浦场发射型光电转换器,以及 导体材料(4)彼此。 光波导材料可以具有通过锐化其发光引导侧而获得的针状(6)。 从而获得了由于大的场致发射电流而具有简单的结构灵敏度和高速响应的光泵浦场发射型光电转换器,其数量级为皮秒(10 -12秒)。

    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode
    34.
    发明公开
    Cathode, electron beam emission apparatus using the same, and method of manufacturing the cathode 失效
    使用相同的阴极elektronenstrahlemittierende装置,以及用于制造阴极的方法

    公开(公告)号:EP0732720A1

    公开(公告)日:1996-09-18

    申请号:EP96103200.0

    申请日:1996-03-01

    Applicant: HITACHI, LTD.

    Abstract: Disclosed is a cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point. The effect of reducing the work function results in a cathode having a narrow FWHM (full width at half maximum) of emission electrons and a high current density. Moreover, the cathode of the present invention is easy to manufacture and handle.

    Abstract translation: 公开的是具有给电子钨单晶发射极具有锋利的尖端的阴极(E. G.,肖特基发射阴极),以及连接到所述电子发射器将其加热的加热器。 电子发射器的点的晶面的功函数通过在其上锆,钛,Y,Nb的,SC,V或La,的氮化物或Y,钪,V或La的氧化物的吸附提供降低。 的氮化物或氧化物可以形成为在所述加热器(从那里热扩散到的点),或化学吸附上的点的贮存器。 用于形成上的点的氮化物或氧化物,可以被提供在该点的金属形成氮化物或氧化物,与氮或氧在该处,以形成氮化物或氧反应; 对点提供金属,该金属在形成氮化物或氧化物可以蒸发要么走上点,或者可以形成到该点上的加热器和热扩散从那里的贮存器。 减少在具有发射电子的窄FWHM(半峰全宽)和高电流密度的阴极功函数的结果的影响。 更过来,本发明的阴极是易于制造和处理。

    Thermal-field type electron source composed of transition metal carbide material with artificial facet
    37.
    发明授权
    Thermal-field type electron source composed of transition metal carbide material with artificial facet 有权
    由过渡金属碳化物材料与人造面组成的热场型电子源

    公开(公告)号:US09240301B1

    公开(公告)日:2016-01-19

    申请号:US13851732

    申请日:2013-03-27

    Abstract: An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.

    Abstract translation: 电子源由具有高耐火性质的混合金属碳化物材料制成。 从这些材料产生场强增强的热离子发射,即热场或延伸的肖特基发射需要使用某种低功函数的晶体学方向,例如(100),(210)和(310) 。 这些材料由于其耐火性质而不自然而然。 所披露的由过渡金属碳化物材料制成的电子源在安装在需要高亮度,远光束电流源的先进成像应用的扫描电子显微镜(SEM)中是特别有用的。

    Matrix phosphor cold cathode display employing secondary emission
    38.
    发明授权
    Matrix phosphor cold cathode display employing secondary emission 有权
    采用二次发射的矩阵荧光体冷阴极显示器

    公开(公告)号:US08222813B2

    公开(公告)日:2012-07-17

    申请号:US12079658

    申请日:2008-03-28

    CPC classification number: H01J11/00 H01J2201/317 H01J2211/66

    Abstract: A vacuum flat panel display including: a plurality of electrically addressable pixels; a plurality of thin-film transistor driver circuits each being electrically coupled to an associated at least one of the pixels, respectively; a passivating layer on the thin-film transistor driver circuits and at least partially around the pixels; a conductive frame on the passivating layer, said frame and pixel area coated with an insulator; and, a plurality of cathode emitters are deposited on the coated frame while phosphor is deposited on the coated pixel; wherein, exciting the cathode emitters and addressing one of the pixels using the associated driver circuit causes the emitted electrons to induce one of the pixels to emit light. By introducing a noble gas or mixture, and a ML layer having a DC, AC or pulsed voltage applied thereto, one creates a plasma to form a sheath boundary at the insulator causing electron multiplication and increased illumination.

    Abstract translation: 一种真空平板显示器,包括:多个电可寻址像素; 多个薄膜晶体管驱动电路分别电耦合到相关联的至少一个像素; 薄膜晶体管驱动器电路上的钝化层,并且至少部分地围绕所述像素; 所述钝化层上的导电框架,所述框架和像素区域涂覆有绝缘体; 并且在涂覆的框架上沉积多个阴极发射体,同时将磷光体沉积在涂覆的像素上; 其中,使用所述相关联的驱动器电路激励所述阴极发射器并寻址所述像素之一,使所发射的电子感应所述像素之一发光。 通过引入惰性气体或混合物以及施加有DC,AC或脉冲电压的ML层,产生等离子体以在绝缘体上形成鞘边界,引起电子倍增和增加的照明。

    Dielectric composition and dielectric film element
    39.
    发明授权
    Dielectric composition and dielectric film element 有权
    电介质组成和介电膜元件

    公开(公告)号:US07276462B2

    公开(公告)日:2007-10-02

    申请号:US11209332

    申请日:2005-08-23

    Abstract: Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula PbxBip(Mgy/3Nb2/3)aTib-zMzZrcO3 [wherein x, p, and y satisfy the following relations: 0.85≦x≦1.05, 0.02≦p≦0.1, and 0.8≦y≦1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02≦z≦0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO.

    Abstract translation: 提供一种当应用于电子发射体时能够抑制电子发射量随时间的减少的电介质组合物。 电介质组合物含有作为主要成分的由下式表示的PMN-PZ-PT三元固溶体组合物Pb(Mg y / y) 3 Nb 2/3 3)a z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 其中x,p和y满足以下关系:0.85 <= x <= 1.05,0.02 <= p <= 0.1,0.8 <= y <= 1.0; a,b,c是分别连接以下五个点(0.550,0.425,0.025),(0.550,0.150,0.300),(0.100,0.150,0.7050),(0.100,0.525,0.375),(0.100,0.525,0.375), )和(0.375,0.425,0.200); z满足以下关系:0.02 <= z <= 0.10; 并且M是选自Nb,Ta,Mo和W中的至少一种元素,并且含有0.05-2.0重量%的Ni。 %减少到NiO。

    Vacuum microelectronic device and method
    40.
    发明申请
    Vacuum microelectronic device and method 失效
    真空微电子器件及方法

    公开(公告)号:US20030036332A1

    公开(公告)日:2003-02-20

    申请号:US09932642

    申请日:2001-08-17

    Applicant: Motorola, Inc.

    Abstract: A vacuum microelectronic device (10,40) emits electrons (37) from surfaces of nanotube emitters (17, 18). Extracting electrons from the surface of each nanotube emitter (17) results is a small voltage variation between each emitter utilized in the device (10, 40). Consequently, the vacuum microelectronic device (10,40) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter (17,18).

    Abstract translation: 真空微电子器件(10,40)从纳米管发射器(17,18)的表面发射电子(37)。 从每个纳米管发射器(17)的表面提取电子的结果是在器件(10,40)中使用的每个发射极之间的电压变化很小。 因此,真空微电子器件(10,40)具有来自每个纳米管发射极(17,18)的更可控的接通电压和一致的电流密度。

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