Abstract:
A thermal field emission cathode comprising a tungsten single crystal having an axis direction of and a coating layer of zirconium and oxygen formed thereon, wherein a source for supplying zirconium and oxygen contains an element capable of forming cubic or tetragonal zirconium oxide at an operation temperature of the thermal field emission cathode.
Abstract:
An apparatus for high speed gating of electric current based on the resonant interaction of tunnelling electron with optical fields is disclosed. The present invention biases an electron-emitting tip with a DC voltage source and focuses an output from a laser on the electron-emitting tip to stimulate electron emission from the tip said tip having a coating for enhancing the effect of the optical field of the impinging laser. The electron emission creates an electrical signal that is coupled to circuitry for further processing. In accordance with the present invention, various methods of coupling the electrical signal from the electron-emitting tip are disclosed, as are various methods of reducing the magnitude of the laser output needed to stimulate electron emission, and methods of enhancing the static current density.
Abstract:
An optical pumping field emission type light-to-current converter is constructed by joining an optical wave guide material (1) through which light is propagated, a conductive transparent film (2), a semiconductor material or an insulating material (3), and a conductor material (4) to each other. The optical wave guide material may have a needle-like shape (6) which is obtained by sharpening the light emission guide side thereof. Thereby is obtained an optical pumping field emission type light-to-current converter having a simplified structure high sensitivity and high-speed response on the order of picoseconds (10 -12 seconds) due to a large field emission current.
Abstract:
Disclosed is a cathode (e.g., a Schottky emission cathode) having an electron emitter of a tungsten single-crystal with a sharp point, and a heater connected to the electron emitter to heat it. The work function of the crystal face of the point of the electron emitter is reduced by providing adsorbed thereon a nitride of Zr, Ti, Y, Nb, Sc, V or La, or an oxide of Y, Sc, V or La. The nitride or oxide can be formed as a reservoir on the heater (from where it thermally diffuses to the point), or chemically adsorbed on the point. For forming the nitride or oxide on the point, the metal forming the nitride or oxide can be provided on the point and reacted with nitrogen or oxygen thereat to form the nitride or oxide; to provide the metal on the point, the metal forming the nitride or oxide can either be evaporated onto the point, or can form a reservoir on the heater and thermally diffuse therefrom to the point. The effect of reducing the work function results in a cathode having a narrow FWHM (full width at half maximum) of emission electrons and a high current density. Moreover, the cathode of the present invention is easy to manufacture and handle.
Abstract:
In modernen Elektronenstrahlmeßgeräten wird die thermische La/B6 bzw. Feldemissionsquelle durch einen mit einem gepulsten Laserstrahl beaufschlagte Photokathode ersetzt. Da die Breite der Photoelektronenimpulse etwa der Breite der Laserimpulse entspricht, sind diese Geräte insbesondere für stroboskopische Messungen in schnellen Gallium-Arsenid-Schaltungen geeignet. Der apparative Aufwand zur Erzeugung der Photoelektronenimpulse ist allerdings beträchtlich, da Mittel zur Verdoppelung der Frequenz des primären Laserlichtes erforderlich sind. Es wird deshalb vorgeschlagen, die Kathode des Elektronenstrahlmeßgerätes mit Photonen der Energie E Ph
Abstract:
본 발명은 카본계 물질 및 광전소자(photoelectric element : 光電素子)를 포함한 전자 방출원, 상기 전자 방출원의 제조 방법, 상기 전자 방출원을 구비한 전자 방출 소자 및 상기 전자 방출원을 구비한 전자 방출 디스플레이 장치에 관한 것이다. 상기 전자 방출원은 카본계 물질 외에 광전소자를 포함하는 바, 높은 휘도를 가질 수 있다.
Abstract:
An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.
Abstract:
A vacuum flat panel display including: a plurality of electrically addressable pixels; a plurality of thin-film transistor driver circuits each being electrically coupled to an associated at least one of the pixels, respectively; a passivating layer on the thin-film transistor driver circuits and at least partially around the pixels; a conductive frame on the passivating layer, said frame and pixel area coated with an insulator; and, a plurality of cathode emitters are deposited on the coated frame while phosphor is deposited on the coated pixel; wherein, exciting the cathode emitters and addressing one of the pixels using the associated driver circuit causes the emitted electrons to induce one of the pixels to emit light. By introducing a noble gas or mixture, and a ML layer having a DC, AC or pulsed voltage applied thereto, one creates a plasma to form a sheath boundary at the insulator causing electron multiplication and increased illumination.
Abstract:
Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula PbxBip(Mgy/3Nb2/3)aTib-zMzZrcO3 [wherein x, p, and y satisfy the following relations: 0.85≦x≦1.05, 0.02≦p≦0.1, and 0.8≦y≦1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02≦z≦0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO.
Abstract translation:提供一种当应用于电子发射体时能够抑制电子发射量随时间的减少的电介质组合物。 电介质组合物含有作为主要成分的由下式表示的PMN-PZ-PT三元固溶体组合物Pb(Mg y / y) 3 Nb 2/3 3)a z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z z / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 其中x,p和y满足以下关系:0.85 <= x <= 1.05,0.02 <= p <= 0.1,0.8 <= y <= 1.0; a,b,c是分别连接以下五个点(0.550,0.425,0.025),(0.550,0.150,0.300),(0.100,0.150,0.7050),(0.100,0.525,0.375),(0.100,0.525,0.375), )和(0.375,0.425,0.200); z满足以下关系:0.02 <= z <= 0.10; 并且M是选自Nb,Ta,Mo和W中的至少一种元素,并且含有0.05-2.0重量%的Ni。 %减少到NiO。
Abstract:
A vacuum microelectronic device (10,40) emits electrons (37) from surfaces of nanotube emitters (17, 18). Extracting electrons from the surface of each nanotube emitter (17) results is a small voltage variation between each emitter utilized in the device (10, 40). Consequently, the vacuum microelectronic device (10,40) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter (17,18).