-
公开(公告)号：KR1020050001296A
公开(公告)日：2005-01-06
申请号：KR1020030042900
申请日：2003-06-28
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: A system for controlling a measuring unit of semiconductor equipment is provided to avoid a loss of a control number by attaching and recognizing a bar code, and to improve work efficiency by simultaneously monitoring the information of a plurality of measuring units. CONSTITUTION: A bar code recognizing part(110) recognizes the bar code attached to a measuring unit for measuring semiconductor equipment. Based upon the data detected by the bar code recognizing part, a control part(120) searches for the information of semiconductor equipment coinciding with the data. A display part(140) receives the information of the semiconductor equipment from the control part and displays the received information.
Abstract translation: 目的：提供一种用于控制半导体设备的测量单元的系统，以通过附加和识别条形码来避免控制数量的损失，并且通过同时监视多个测量单元的信息来提高工作效率。 条款：条形码识别部分（110）识别附接到用于测量半导体设备的测量单元的条形码。 基于由条形码识别部检测出的数据，控制部（120）搜索与数据一致的半导体装置的信息。 显示部分（140）从控制部分接收半导体设备的信息并显示所接收的信息。
-
公开(公告)号：KR1020040103218A
公开(公告)日：2004-12-08
申请号：KR1020030035151
申请日：2003-05-31
Applicant: 삼성전자주식회사
IPC: H01L21/762
Abstract: PURPOSE: A method for forming a field oxide layer of a semiconductor device having an uniform surface is provided to perform easily a gap-fill process and form uniformly a surface of the field oxide layer by forming a spacer in an inner wall of a trench. CONSTITUTION: The first oxide layer is selectively formed on a peripheral region of a semiconductor substrate(200). A pad nitride layer is formed on the peripheral region and a cell region. A trench is formed by etching selectively the peripheral region and the cell region. The trench is buried by forming a primary oxide layer on the entire structure. The primary oxide layer is etched back. The second oxide layer is formed on the entire surface of the structure including the trench. A spacer is formed on a lateral part of the trench by etching the second oxide layer. The trench is buried by forming a secondary oxide layer on the structure including the spacer.
Abstract translation: 目的：提供一种形成具有均匀表面的半导体器件的场氧化物层的方法，以便容易地进行间隙填充处理，并且通过在沟槽的内壁中形成间隔物来均匀地形成场氧化物层的表面。 构成：第一氧化物层选择性地形成在半导体衬底（200）的外围区域上。 在周边区域和单元区域上形成衬垫氮化物层。 通过选择性地蚀刻外围区域和电池区域形成沟槽。 通过在整个结构上形成主氧化层来掩埋沟槽。 主氧化层被回蚀。 第二氧化物层形成在包括沟槽的结构的整个表面上。 通过蚀刻第二氧化物层，在沟槽的侧面部分上形成间隔物。 通过在包括间隔物的结构上形成二次氧化物层来掩埋沟槽。
-
公开(公告)号：KR1020040025198A
公开(公告)日：2004-03-24
申请号：KR1020020057047
申请日：2002-09-18
Applicant: 삼성전자주식회사
IPC: H01L21/28
Abstract: PURPOSE: An electroless plating method and a forming method of a metal line of a semiconductor device using the same are provided to improve densification and uniformity of a metal line by using plasma treatment and activation treatment. CONSTITUTION: A plasma treatment layer(70a) is formed to enhance surface energy of a lower layer by performing plasma treatment of the lower layer. A plating nucleus is formed by activating the plasma treatment layer(70a). A uniform and dense metal plating film(90) is formed on the plasma treatment layer by electroless plating using the plating nucleus.
Abstract translation: 目的：提供使用其的半导体器件的金属线的无电镀方法和形成方法，以通过使用等离子体处理和活化处理来改善金属线的致密化和均匀性。 构成：通过进行下层的等离子体处理，形成等离子体处理层（70a）以增强下层的表面能。 通过激活等离子体处理层（70a）形成电镀核。 通过使用电镀核的无电解电镀，在等离子体处理层上形成均匀且致密的金属电镀膜（90）。
-
44.发明公开
公开(公告)号：KR1020030027185A
公开(公告)日：2003-04-07
申请号：KR1020010056837
申请日：2001-09-14
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: PURPOSE: A method for cleaning a substrate having an exposed boron nitride layer is provided to use a boron nitride layer having a relatively high etch selectivity and a low dielectric constant by cleaning a substrate without damaging the exposed boron nitride layer. CONSTITUTION: The boron nitride layer(12) is exposed in a predetermined portion of a semiconductor substrate(10). An organic material(22) is formed on the semiconductor substrate. The boron nitride layer is protected and cleaned by using chemicals at a temperature not higher than 50 deg.C. The organic material includes polymer and a photoresist pattern after an etch process. The chemicals include H2SO4 and SC1(NH4OH:H2O2:H2O).
Abstract translation: 目的：提供一种用于清洁具有暴露的氮化硼层的衬底的方法，以通过清洁衬底而不损害暴露的氮化硼层来使用具有较高蚀刻选择性和低介电常数的氮化硼层。 构成：氮化硼层（12）暴露在半导体衬底（10）的预定部分中。 在半导体基板上形成有机材料（22）。 氮化硼层通过使用不高于50摄氏度的化学物质进行保护和清洁。 有机材料在蚀刻工艺之后包括聚合物和光致抗蚀剂图案。 化学品包括H2SO4和SC1（NH4OH：H2O2：H2O）。
-
公开(公告)号：KR1020030017731A
公开(公告)日：2003-03-04
申请号：KR1020010050718
申请日：2001-08-22
Applicant: 삼성전자주식회사
IPC: H01L21/28
Abstract: PURPOSE: A method for forming wires of a semiconductor device is provided to improve a yield of a semiconductor by forming a blocking layer in a process for forming an electric wire. CONSTITUTION: The first insulating layer(22) including the first conductive pattern(24) is formed on a semiconductor substrate(20). A blocking layer(26a) is formed on an upper portion of the first insulating layer(22). The second insulating layer(28a) is formed on an upper portion of the blocking layer(26a). A contact hole is formed by etching continuously predetermined parts of the first insulating layer(22) and the blocking layer(28a). A metal barrier layer(30) is formed on the inside of the contact hole and the second insulating layer(28a). A metal layer(32) is formed by depositing a conductive material on the contact hole.
Abstract translation: 目的：提供一种用于形成半导体器件的导线的方法，以在形成电线的工艺中形成阻挡层来提高半导体的产量。 构成：包括第一导电图案（24）的第一绝缘层（22）形成在半导体衬底（20）上。 在第一绝缘层（22）的上部形成阻挡层（26a）。 第二绝缘层（28a）形成在阻挡层（26a）的上部。 通过连续蚀刻第一绝缘层（22）和阻挡层（28a）的预定部分形成接触孔。 在接触孔的内侧和第二绝缘层（28a）上形成金属阻挡层（30）。 通过在导电孔上沉积导电材料形成金属层（32）。
-
Patent Agency Ranking
公开(公告)号：KR1020020043125A
公开(公告)日：2002-06-08
申请号：KR1020000072602
申请日：2000-12-01
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247 , H01L29/788
Abstract: PURPOSE: A method for forming a gate of a non-volatile memory device is provided to fabricate the gate by using a cobalt silicide layer without a defect. CONSTITUTION: A plurality of gate pattern(120) is formed on a semiconductor substrate(100). A spacer(130) of an oxide layer is formed on a sidewall of the gate pattern(120). A nitride layer(140) is formed on a whole surface of the above structure including the spacer(130). A space between the gate patterns(120) is buried by depositing an insulating material. An insulating layer(150a) is formed by performing a planarization process. A cobalt layer is formed thereon. A protective layer is formed on the above structure including the cobalt layer. A CoSi layer is formed by performing the first rapid thermal annealing process. The remaining cobalt and the protective layer are removed by using a wet etch method. A cobalt silicide layer(180') is formed by reacting the cobalt layer and the silicon of the third polysilicon layer.
Abstract translation: 目的：提供一种用于形成非易失性存储器件的栅极的方法，以通过使用没有缺陷的硅化钴层来制造栅极。 构成：在半导体衬底（100）上形成多个栅极图案（120）。 氧化物层的间隔物（130）形成在栅极图案（120）的侧壁上。 在包括间隔物（130）的上述结构的整个表面上形成氮化物层（140）。 通过沉积绝缘材料来掩埋栅极图案（120）之间的空间。 通过进行平坦化处理形成绝缘层（150a）。 在其上形成钴层。 在包括钴层的上述结构上形成保护层。 通过执行第一快速热退火工艺形成CoSi层。 通过使用湿式蚀刻方法除去剩余的钴和保护层。 通过钴层和第三多晶硅层的硅使钴硅化物层（180'）形成。
-
公开(公告)号：KR100260420B1
公开(公告)日：2000-07-01
申请号：KR1019970052130
申请日：1997-10-10
Applicant: 삼성전자주식회사
IPC: H04R1/02
Abstract: PURPOSE: A speaker unit fixing apparatus for an omnidirectional speaker system is provided which fixes speaker units inside a spherical cabinet to generate sound waves uniformly in every direction. CONSTITUTION: An omnidirectional speaker system includes a spherical cabinet(70), speaker units(71) set at the upper and lower parts inside the cabinet, being opposite to each other, and a sound reflecting plate(72) which is placed in front of each speaker unit and has a hemispherical shape whose convex side faces the speaker unit. The apparatus further has a fixing boss(73) having a screw hole(73a) for screw joint, and a fixing hole(71b) formed at a frame of each speaker unit to accord with the screw hole of the fixing boss. The frame of the speaker unit and the sound reflecting plate maintain an optimal distance between them while the frame being fixed with a screw through the fixing hole, to diffuse sounds from the speaker unit according to the sound reflecting plate.
Abstract translation: 目的：提供一种用于全方向扬声器系统的扬声器单元定影装置，其将扬声器单元固定在球面柜内，以在每个方向均匀地产生声波。 构成：一个全方向扬声器系统，包括一个球面柜（70），扬声器单元（71）设置在机壳内部的上部和下部，彼此相对;和一个声音反射板（72） 每个扬声器单元并且具有其凸面面向扬声器单元的半球形状。 该装置还具有一个具有用于螺纹接头的螺纹孔（73a）的固定凸台（73）和形成在每个扬声器单元的框架处以与固定凸台的螺钉孔一致的固定孔（71b）。 扬声器单元和声音反射板的框架在它们之间保持最佳距离，同时通过固定孔用螺钉固定框架，以根据声音反射板扩散来自扬声器单元的声音。
-
公开(公告)号：KR100213210B1
公开(公告)日：1999-08-02
申请号：KR1019960033471
申请日：1996-08-12
Applicant: 삼성전자주식회사
IPC: H01L27/108
Abstract: 반구형의 USG(undoped silicate glass)막을 이용한 반도체 장치의 커패시터 제조방법에 관하여 개시한다. 본 발명은 반도체 기판상에 콘택홀을 갖는 절연막을 형성하는 단계와, 상기 콘택홀을 매몰하면서 상기 절연막상에 임의의 두께를 갖는 도전층을 형성하는 단계와, 상기 도전층 상에 반구형의 USG막을 형성하는 단계와, 상기 도전층 및 상기 반구형의 USG막을 패터닝하여 도전층 패턴 및 반구형의 USG막 패턴을 형성하는 단계와, 상기 반구형의 USG막 패턴을 마스크로 상기 도전층 패턴을 일정 깊이로 식각함으로써 돌기모양의 스토리지 전극을 형성하는 단계와, 상기 반구형의 USG막 패턴을 제거하는 단계와, 상기 스토리지 전극이 형성된 기판의 전면에 유전막 및 플레이트 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 장치의 커패시터 제조방법을 제공한다. 상술한 바와 같은 본 발명의 반도체 장치의 커패시터 제조방법은 반구형의 USG막을 이용하여 공정마진이 크고, 크기의 조절이 용이하며 웨이퍼 이면에 증착되지 않아 유용하게 사용될 수 있다.
-
公开(公告)号：KR1019980068044A
公开(公告)日：1998-10-15
申请号：KR1019970004476
申请日：1997-02-14
Applicant: 삼성전자주식회사
IPC: H01L21/22
Abstract: 화학 기상 증착법에 의하여 텅스텐 실리사이드층의 형성시에 반응 부산물로 발생하는 염소 오염을 억제하여 안정된 특성을 갖는 텅스텐 실리사이드층을 형성할 수 있는 CVD법에 의한 텅스텐 실리사이드층 형성방법에 관하여 개시한다. 이를 위하여 본 발명은, 텅스텐 실리사이드층을 형성하기 위한 챔버에 암모니아(NH
3 ) 가스를 주입하여 염소기를 제거하는 단계와, 상기 챔버로 디클로르실란(SiH
2 Cl
2 ) 가스를 주입하여 실리콘 시드(seed)를 형성하는 단계와, 상기 챔버로 디클로르실란(SiH2Cl2)과 육불화텅스텐(WF
6 ) 가스를 주입하고 1차 반응시켜 텅스텐 실리사이드층의 핵(nucleation)을 형성하는 단계와, 상기 챔버로 디클로르실란(SiH2Cl2)과 육불화텅스텐(WF6) 가스를 주입하고 2차 반응시켜 텅스텐 실리사이드층을 형성하는 단계와, 상기 챔버로 디클로르실란(SiH2Cl2)을 주입하여 후처리를 실시하는 단계와, 상기 챔버로 암모니아(NH3) 가스를 주입하여 잔류 염소기를 제거하는 단계를 구비하는 것을 특징으로 하는 CVD를 통한 텅스텐 실리사이드층 형성방법을 제공한다. -
-
-
-
-
-
-
-
-
Search Results
125
records
(took 0.025 seconds)
