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公开(公告)号：KR1020100101450A
公开(公告)日：2010-09-17
申请号：KR1020090019950
申请日：2009-03-09
Applicant: 삼성전자주식회사
IPC: H01L21/336
CPC classification number: H01L21/3143 , H01L21/02175 , H01L21/022 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/513 , H01L29/788 , H01L29/792
Abstract: PURPOSE: A semiconductor device and a method of manufacturing method are provided to implement a semiconductor device having high reliable metal oxide nitride film. CONSTITUTION: A metal nitride layer and a metal oxide layer are formed in on a semiconductor substrate. A metal oxide nitride film(128) is formed on a substrate having a metal nitride layer and a metal oxide layer through a heat treatment process. The metal oxide nitride film is reacted with the metal nitride layer, the metal oxide layer, and a second metal nitride layer.
Abstract translation: 目的：提供半导体器件及其制造方法，以实现具有高可靠性的金属氧化物氮化物膜的半导体器件。 构成：在半导体衬底上形成金属氮化物层和金属氧化物层。 通过热处理工艺在具有金属氮化物层和金属氧化物层的基板上形成金属氧化物氮化物膜（128）。 金属氧化物氮化物膜与金属氮化物层，金属氧化物层和第二金属氮化物层反应。
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公开(公告)号：KR1020090100951A
公开(公告)日：2009-09-24
申请号：KR1020080026489
申请日：2008-03-21
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/28273 , H01L21/02164 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02337 , H01L21/02348 , H01L21/02356 , H01L21/28282 , H01L21/3141 , H01L21/31612 , H01L21/3162 , H01L21/84 , H01L29/42332 , H01L29/7881 , H01L29/792 , H01L29/42324
Abstract: PURPOSE: A nonvolatile memory device and method of forming the same are provided to improve the interfacial property between the silicon oxide film and the aluminum oxide film. CONSTITUTION: The tunnel insulating layer(20) is formed on the semiconductor substrate(11). The charge trapping layer(30) is formed on the tunnel insulating layer. The first aluminum oxide film(42) successively laminated on the charge trapping layer, and the silicon oxide film(44) and the dielectric layer(40) including the second aluminum oxide layer(46) are formed. The gate electrode which contacts with the second aluminum oxide layer is formed on the dielectric layer.
Abstract translation: 目的：提供一种非易失性存储器件及其形成方法，以改善氧化硅膜和氧化铝膜之间的界面特性。 构成：隧道绝缘层（20）形成在半导体衬底（11）上。 电荷俘获层（30）形成在隧道绝缘层上。 形成连续层叠在电荷俘获层上的第一氧化铝膜（42），并且形成包含第二氧化铝层（46）的氧化硅膜（44）和电介质层（40）。 与第二氧化铝层接触的栅电极形成在电介质层上。
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公开(公告)号：KR1020090014870A
公开(公告)日：2009-02-11
申请号：KR1020070079172
申请日：2007-08-07
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L29/513 , C23C16/40 , C23C16/45531 , C23C16/45553 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/78
Abstract: A method for formation of dysco3 film by ALD, semiconductor film stack containing DysScO3 film and method for formation of the same are provided to transfer and supply easily the source materials of low vapor pressure by transporting the source materials of the liquid state of the room temperature by the vaporizer. The Dy source material and Sc source material are carried in the liquid state to the vaporizer(110) positioned in one end of the chamber(100) through liquid conveying lines(120a,120b). The source materials in the liquid state are vaporized in the vaporizer. The vaporized source materials are successively supplied into the chamber to form the DyScO3 film on the substrate by ALD. The Dy source material inlcudes the Dy(EDMDD)3. The Sc source material includes the Sc(EDMDD)3.
Abstract translation: 提供了通过ALD形成dysco3膜的方法，含有DysScO 3膜的半导体膜堆及其形成方法，通过输送室温液态的原料轻易地转移和供给低蒸气压源 通过蒸发器。 Dy源材料和Sc源材料通过液体输送管线（120a，120b）以液态运送到位于室（100）一端的蒸发器（110）。 处于液态的源材料在蒸发器中蒸发。 蒸发的源材料依次供应到室中以通过ALD在衬底上形成DyScO 3膜。 Dy源材料包括Dy（EDMDD）3。 Sc源材料包括Sc（EDMDD）3。
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公开(公告)号：KR100825787B1
公开(公告)日：2008-04-29
申请号：KR1020060104683
申请日：2006-10-26
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L29/7923 , H01L29/4234
Abstract: 프로그램과 소거 동작에서 문턱전압의 극대화와 속도의 향상을 가져오는 전하트랩층을 포함하는 메모리소자를 제공한다. 그 소자는 반도체 기판 상에 배치된 터널절연막 상에 배치되고, 정공(hole) 트랩 밀도가 높은 제1 질화막과 전자(electron) 트랩 밀도가 높은 제2 질화막의 적어도 하나 쌍으로 이루어진 전하트랩층을 포함한다.
전하트랩층, 정공 트랩밀도, 전자 트랩밀도, 질화막-
公开(公告)号：KR1020080035859A
公开(公告)日：2008-04-24
申请号：KR1020060102452
申请日：2006-10-20
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/792 , H01L21/28282 , H01L29/4234
Abstract: A nonvolatile memory device is provided to improve program/erase operations in case of a low operational voltage is applied to a gate electrode by employing a blocking layer including an LaAlO3 layer. A tunnel layer(110) is formed on a semiconductor substrate(100). A charge trap layer(120) is formed on the tunnel layer. A blocking layer(130) is formed on the charge trap layer. The blocking layer includes an LaAlO3 layer(134). A gate electrode(140) is formed on the blocking layer. Source/drain regions(160) are formed to be aligned to the gate electrode. The blocking layer is a laminated structure of a first Al2O3 layer(136), the LaAlO3 layer, and a second Al2O3 layer. A width of the gate electrode is smaller than that of the blocking layer. A dielectric is formed on an upper surface of the blocking layer on which the gate electrode is not formed.
Abstract translation: 提供一种非易失性存储器件，用于通过采用包括LaAlO 3层的阻挡层将低工作电压施加到栅电极的情况下改善编程/擦除操作。 隧道层（110）形成在半导体衬底（100）上。 在隧道层上形成电荷捕获层（120）。 在电荷陷阱层上形成阻挡层（130）。 阻挡层包括LaAlO 3层（134）。 在阻挡层上形成栅电极（140）。 源极/漏极区域（160）形成为与栅电极对准。 阻挡层是第一Al 2 O 3层（136），LaAlO 3层和第二Al 2 O 3层的层叠结构。 栅电极的宽度小于阻挡层的宽度。 在没有形成栅电极的阻挡层的上表面上形成电介质。
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Patent Agency Ranking
公开(公告)号：KR1020080022852A
公开(公告)日：2008-03-12
申请号：KR1020060086593
申请日：2006-09-08
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/792 , H01L29/66833
Abstract: A non-volatile memory device and a manufacturing method thereof are provided to electrons trapped in a charge trapping layer pattern by removing side portions of the charge trapping layer pattern through isotropic etching. A tunnel insulating layer pattern(140) is formed on a channel region of a substrate(100). A charge trapping layer pattern(144) is formed on the tunnel insulating layer pattern to trap electrons from the channel region. A dielectric layer pattern(136) is formed on the charge trapping layer pattern, and a gate electrode is formed on the dielectric layer pattern. Spacers(132) are formed on sidewalls of the gate electrode. The charge trapping layer pattern has a width smaller than a distance between outer surfaces of the spacers. The width of the charge trapping layer pattern is smaller than that of the tunnel insulating layer pattern.
Abstract translation: 通过各向同性蚀刻去除电荷俘获层图案的侧边部分，将非易失性存储器件及其制造方法提供给捕获在电荷俘获层图案中的电子。 隧道绝缘层图案（140）形成在衬底（100）的沟道区上。 电荷俘获层图案（144）形成在隧道绝缘层图案上以从沟道区域捕获电子。 在电荷捕获层图案上形成电介质层图案（136），并且在电介质层图案上形成栅电极。 隔板（132）形成在栅电极的侧壁上。 电荷捕获层图案的宽度小于间隔物的外表面之间的距离。 电荷俘获层图案的宽度小于隧道绝缘层图案的宽度。
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公开(公告)号：KR100807228B1
公开(公告)日：2008-02-28
申请号：KR1020060090444
申请日：2006-09-19
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/66833 , H01L21/28282 , H01L29/4234 , H01L29/517
Abstract: A method for fabricating a non-volatile memory device is provided to improve the threshold voltage and leakage current characteristic of the device by forming a gate structure on a channel region. A tunnel insulation layer(102) having a first thickness is formed on a substrate(100) having a channel region through a thermal oxidization process. A second tunnel insulation layer(104) having a second thickness shallower than the first thickness is formed on the first tunnel insulation layer. A charge trapping layer(106) is formed on the tunnel insulation layer to trap electrons in the channel region, and then a blocking layer(108) is formed on the charge trapping layer. A conductive layer(110) is formed on the blocking layer. The conductive layer, the blocking layer, the charge trapping layer, the second tunnel insulation layer and the first tunnel insulation layer are patterned to form a gate structure on the channel region.
Abstract translation: 提供一种用于制造非易失性存储器件的方法，通过在沟道区上形成栅极结构来改善器件的阈值电压和漏电流特性。 具有第一厚度的隧道绝缘层（102）通过热氧化工艺形成在具有沟道区的衬底（100）上。 在第一隧道绝缘层上形成具有比第一厚度浅的第二厚度的第二隧道绝缘层（104）。 在隧道绝缘层上形成电荷俘获层（106），以在沟道区域中捕获电子，然后在电荷俘获层上形成阻挡层（108）。 在阻挡层上形成导电层（110）。 图案化导电层，阻挡层，电荷俘获层，第二隧道绝缘层和第一隧道绝缘层，以在沟道区上形成栅极结构。
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公开(公告)号：KR100578139B1
公开(公告)日：2006-05-10
申请号：KR1020040079041
申请日：2004-10-05
Applicant: 삼성전자주식회사
Inventor： 김선정
IPC: H01L21/304 , H01L21/66
CPC classification number: H01L21/67051 , B08B3/12 , Y10S134/902 , Y10S438/906
Abstract: 웨이퍼 에지 부분의 손상을 방지하고 웨이퍼 전체에 균일한 세정력을 제공할 수 있는 세정 프로브 및 이를 구비하는 메가소닉 세정 장비를 제공한다. 상기 세정 프로브는 웨이퍼 중심 부근에 위치하는 전방부; 압전 변환기에 연결되는 후방부; 및 상기 후방부와 상기 전방부 사이에 위치하며 상기 웨이퍼의 가장자리 부분 상에 위치하되 상기 전방부에 비해 넓은 단면적을 갖는 돌출부를 구비한다.
메가소닉 세정 장비, 세정 프로브-
公开(公告)号：KR1020060030238A
公开(公告)日：2006-04-10
申请号：KR1020040079041
申请日：2004-10-05
Applicant: 삼성전자주식회사
Inventor： 김선정
IPC: H01L21/304 , H01L21/66
CPC classification number: H01L21/67051 , B08B3/12 , Y10S134/902 , Y10S438/906
Abstract: 웨이퍼 에지 부분의 손상을 방지하고 웨이퍼 전체에 균일한 세정력을 제공할 수 있는 세정 프로브 및 이를 구비하는 메가소닉 세정 장비를 제공한다. 상기 세정 프로브는 웨이퍼 중심 부근에 위치하는 전방부; 압전 변환기에 연결되는 후방부; 및 상기 후방부와 상기 전방부 사이에 위치하며 상기 웨이퍼의 가장자리 부분 상에 위치하되 상기 전방부에 비해 넓은 단면적을 갖는 돌출부를 구비한다.
메가소닉 세정 장비, 세정 프로브-
公开(公告)号：KR1020030005765A
公开(公告)日：2003-01-23
申请号：KR1020010041212
申请日：2001-07-10
Applicant: 삼성전자주식회사
IPC: G08B23/00
Abstract: PURPOSE: A portable terminal and a security service method using the same are provided to sense an external circumstance, and automatically dial, and generate an alarm sound by a sensor when an emergency situation occurs. CONSTITUTION: A sensor(210) senses an external circumstance of a terminal and converts it into an electric signal. An automatic dial processor(220) generates an automatic dialing signal when the electric signal from the sensor(210) is greater than a predetermined voltage. A transmitter(240) transmits a corresponding signal to a stored telephone number according to the automatic dialing signal from the automatic dial processor(220). An alarm signal section(230) receives an electric signal from a shock sensor(217) and generates an alarm sound. An output section(250) outputs the alarm sound from the alarm signal section(230).
Abstract translation: 目的：提供便携式终端和使用该便携式终端的安全服务方法，用于感测外部环境，并在发生紧急情况时自动拨号，并由传感器产生报警声。 构成：传感器（210）感测端子的外部环境并将其转换为电信号。 当来自传感器（210）的电信号大于预定电压时，自动拨号处理器（220）产生自动拨号信号。 发射机（240）根据来自自动拨号处理器（220）的自动拨号信号将相应的信号发送到存储的电话号码。 报警信号部分（230）从冲击传感器（217）接收电信号并产生报警声。 输出部（250）从报警信号部（230）输出报警声。
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