公开(公告)号：KR1020070014546A

公开(公告)日：2007-02-01

申请号：KR1020050069290

申请日：2005-07-29

Applicant: 삼성전자주식회사

Inventor： 이혁재 ,  우창우 ,  박진준 ,  배도인 ,  서기원

IPC: H01L21/68 ,  H01L21/02

Abstract: Semiconductor manufacturing equipment is provided to maximize the yield by improving reproducibility of a wafer teaching process without failure using a camera and a control unit. Semiconductor manufacturing equipment includes a plurality of loadlock chambers(110) for storing a cassette with wafers, a plurality of process chambers(130) with a wafer chuck, a transfer chamber for connecting selectively the process chambers with the loadlock chambers, a wafer transfer robot(152) for transferring the wafer between the loadlock chamber and the process chamber at a center portion of the transfer chamber, a camera, and a control unit. The camera is installed over the chuck in order to detect the wafer. The control unit is used for outputting a control signal capable of controlling a wafer teaching process of the wafer transfer robot according to the position of the wafer checked by the camera.

Abstract translation: 提供半导体制造设备以通过使用相机和控制单元提高晶片教学过程的再现性而无故障地最大化产量。 半导体制造设备包括用于存储具有晶片的盒的多个负载锁定室（110），具有晶片卡盘的多个处理室（130），用于将处理室与负载锁定室选择性连接的传送室，晶片传送机器人 （152），用于在传送室的中心部分处的载荷锁定室和处理室之间传送晶片，相机和控制单元。 将相机安装在卡盘上以检测晶片。 控制单元用于根据由照相机检查的晶片的位置输出能够控制晶片传送机器人的晶片教学过程的控制信号。

公开(公告)号：KR1020050102204A

公开(公告)日：2005-10-26

申请号：KR1020040027363

申请日：2004-04-21

Applicant: 삼성전자주식회사

Inventor： 현기철 ,  배도인

IPC: H01L21/324

CPC classification number: H01L21/67288 ,  H01L21/6719 ,  H01L21/67303

Abstract: 공정 지연 및 사고를 예방할 수 있는 반도체 기판 가공 장치가 개시되어 있다. 반도체 기판 가공 장치는 이너 튜브, 이너 튜브를 감싸는 아웃터 튜브, 이너 및 아웃터 튜브의 하부에 결합된 플랜지, 반도체 기판들을 적층하여 이너 튜브 내로 승강하는 보트, 보트에 적층된 반도체 기판의 상면과 하면을 따라 각기 진행하도록 한 쌍의 검사 신호를 방출하는 센서 유닛, 및 센서 유닛으로부터 검사 신호의 간섭 정보를 제공받아 반도체 기판들의 수납된 상태를 모니터링 하기 위한 모니터링 유닛을 구비한다. 이 경우, 보트는 각각의 반도체 기판이 한 쌍의 센서 유닛 사이에서 정지하도록 비선형적으로 승강하며, 센서 유닛은 정지 상태일 경우 검사 신호를 방출한다. 모니터링 유닛은 검사 신호의 간섭 여부에 따라 반도체 기판의 이상 여부를 예측할 수 있다. 따라서 반도체 기판의 이상으로 인한 공정 사고를 방지할 수 있다.

公开(公告)号：KR1020050026764A

公开(公告)日：2005-03-16

申请号：KR1020030062886

申请日：2003-09-09

Applicant: 삼성전자주식회사

Inventor： 한오연 ,  강연철 ,  배도인

IPC: H01L21/22

Abstract: A method of manufacturing a boat of a vertical diffusion furnace is provided to prevent particles from being generated on a wafer by removing previously convexoconcave type contaminant structure from a slot using a hydrogen torch. A flange and a rod are attached to each other by performing welding using a hydrogen gas(203). Residual stress and contaminants are removed from the welded portion(204). A first bonding process is performed on the resultant structure by using a molten wax(205). A slot for loading a wafer is formed by machining the resultant structure(206). A second bonding process is performed on the slot portion by using the molten wax(207). A convexoconcave type contaminant structure is removed from a surface of the slot by using a hydrogen torch(209). A heat treatment and a cleaning process are performed thereon(210).

Abstract translation: 提供一种制造垂直扩散炉的船的方法，以通过使用氢炬从槽中除去先前的凹凸型污染物结构来防止颗粒在晶片上产生。 通过使用氢气（203）进行焊接，法兰和杆彼此连接。 从焊接部分（204）去除残余应力和污染物。 通过使用熔融蜡（205）对所得结构进行第一粘合工艺。 通过加工所得到的结构（206）形成用于加载晶片的槽。 通过使用熔融蜡（207）在槽部上进行第二粘合处理。 通过使用氢炬（209）从槽的表面去除凹凸型污染物结构。 在其上进行热处理和清洁处理（210）。

公开(公告)号：KR1020050013188A

公开(公告)日：2005-02-03

申请号：KR1020040114012

申请日：2004-12-28

Applicant: 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

Inventor： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC: H05H1/30

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4652

Abstract: PURPOSE: A method and an apparatus of generating gas plasma, a gas composition of generating plasma, and a method of fabricating a semiconductor device using the same are provided to reduce the manufacturing cost by using an inexpensive gas such as C3F8. CONSTITUTION: A first electric field is formed in a first direction perpendicular to a flowing direction of floating gas by applying a current in the same direction as the flowing direction of the floating gas. A second electric field is formed in parallel to the flowing direction of the floating gas. Plasma is generated by applying the first electric field and the second electric field to the floating gas. The floating gas includes gas containing fluoric atoms, oxygen gas, and argon gas.

Abstract translation: 目的：提供一种产生气体等离子体的方法和装置，产生等离子体的气体组成以及使用其制造使用其的半导体器件的方法，以通过使用诸如C3F8的廉价气体来降低制造成本。 构成：通过沿与浮动气体的流动方向相同的方向施加电流，在垂直于浮动气体的流动方向的第一方向上形成第一电场。 与浮置气体的流动方向平行地形成第二电场。 通过将第一电场和第二电场施加到浮置气体而产生等离子体。 浮选气体包括含有氟原子，氧气和氩气的气体。

公开(公告)号：KR1020040041416A

公开(公告)日：2004-05-17

申请号：KR1020020069776

申请日：2002-11-11

Applicant: 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

Inventor： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC: H05H1/30

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

Abstract: PURPOSE: A method and an apparatus for generating gas plasma, a gas composition for generating plasma, and a method for fabricating a semiconductor device using the same are provided to increase the productivity of the plasma in a plasma generation process using a remote method by shortening a period of time for generating the plasma. CONSTITUTION: A method for generating gas plasma includes a process for forming magnetic field, a process for providing electric power, and a process for forming gas plasma. The process for forming magnetic field is to form the main magnetic field having the axial direction and the auxiliary magnetic field having the direction parallel to the axial direction. The process for providing electric power is to apply the RF AC current to a path within a region between the main magnetic field and the auxiliary magnetic field. The process for forming gas plasma is to generate the gas plasma by flowing the gas to the same path as the path for applying the electric power. The path for applying the electric power is formed with a spiral path.

Abstract translation: 目的：提供一种用于产生气体等离子体的方法和装置，用于产生等离子体的气体组合物和使用其的半导体装置的制造方法，以通过缩短使用远程方法来提高等离子体产生过程中的等离子体的生产率 产生等离子体的时间段。 构成：用于产生气体等离子体的方法包括形成磁场的过程，用于提供电力的过程以及用于形成气体等离子体的工艺。 形成磁场的过程是形成具有轴向方向和辅助磁场方向平行于轴向的主磁场。 提供电力的过程是将RF AC电流施加到主磁场和辅助磁场之间的区域内的路径。 用于形成气体等离子体的方法是通过使气体流动到与施加电力的路径相同的路径来产生气体等离子体。 施加电力的路径形成有螺旋路径。

公开(公告)号：KR1020030047512A

公开(公告)日：2003-06-18

申请号：KR1020010078160

申请日：2001-12-11

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  배도인 ,  김국광 ,  황완구 ,  김정주

IPC: H01L21/00

CPC classification number: F16J15/0806 ,  F05C2201/021 ,  F05C2201/0412 ,  F05C2201/0475

Abstract: PURPOSE: A metal gasket used at a semiconductor process chamber is provided to be capable of preventing the metal contamination of the process chamber due to the diffusion of main material components of a main material framing panel by using an anti-diffusing layer. CONSTITUTION: A metal gasket is used for sealing a connecting portion between parts of a process chamber. An anti-diffusing layer(120a) and a corrosion resistive coating layer(130) are sequentially formed on the surface of a main material framing panel(110). When carrying out processes in the process chamber, main material components of the main material framing panel are prevented from diffusing into the corrosion resistive coating layer(130) by the anti-diffusing layer(120a). Preferably, Cu is used for the main material framing panel and Au is used for the corrosion resistive coating layer. Preferably, the anti-diffusing layer is made of one selected from a group consisting of Ti, W, TiN, and Ni.

Abstract translation: 目的：提供半导体处理室使用的金属垫片，以便通过使用防扩散层，能够防止由于主材料框架板的主要材料部件的扩散而造成的处理室的金属污染。 构成：金属垫片用于密封处理室的部件之间的连接部分。 在主材料框架板（110）的表面上依次形成防扩散层（120a）和耐腐蚀涂层（130）。 当在处理室中进行处理时，防止主材料框架板的主要材料部件通过防扩散层（120a）扩散到耐腐蚀涂层（130）中。 优选地，Cu用于主材料框架板，Au用于耐腐蚀涂层。 优选地，防扩散层由选自Ti，W，TiN和Ni的一种制成。

公开(公告)号：KR1020030029249A

公开(公告)日：2003-04-14

申请号：KR1020010061512

申请日：2001-10-05

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  배도인 ,  이상열

IPC: H01L21/324

CPC classification number: H01L21/67103 ,  H05B3/72

Abstract: PURPOSE: An apparatus for heating a substrate and an apparatus having the same are provided to prevent process error due to the non-uniformity in the temperature distribution by heating the substrate using a hot plate with a uniform temperature distribution. CONSTITUTION: An apparatus for heating a substrate(200) includes a heater(220) for issuing a thermal energy for heating a semiconductor substrate(900), and a hot plate(210) for heating the substrate(900) by way of the thermal energy from the heater(220). The hot plate(210) is formed with first and second hot plates(212,214) differentiated in the thermal conductivity. The semiconductor substrate(900) is placed on the second plate(214). The heater(220) contacts the bottom of the hot plate(210) with a hot wire(222) for issuing the thermal energy for heating the semiconductor substrate(900). In this structure, the hot plate(210) is heated by the thermal energy from the heater(220). The first plate(212) contacting the heater(220) is formed with aluminum having a relatively high thermal conductivity. The second plate(214) mounting the semiconductor substrate(900) thereon is formed with stainless steel having a relatively low thermal conductivity.

Abstract translation: 目的：提供一种用于加热基板的装置和具有该装置的装置，以通过使用具有均匀的温度分布的热板来加热基板来防止由于温度分布的不均匀而导致的加工误差。 构成：用于加热衬底（200）的装置包括用于发出用于加热半导体衬底（900）的热能的加热器（220）和用于通过热量加热衬底（900）的热板（210） 来自加热器（220）的能量。 热板（210）形成有热导率不同的第一和第二热板（212,214）。 将半导体衬底（900）放置在第二板（214）上。 加热器（220）用热丝（222）接触热板（210）的底部，用于发出用于加热半导体衬底（900）的热能。 在这种结构中，热板（210）被来自加热器（220）的热能加热。 与加热器（220）接触的第一板（212）由具有较高导热性的铝形成。 在其上安装半导体衬底（900）的第二板（214）由具有相对较低热导率的不锈钢形成。

公开(公告)号：KR1020070106257A

公开(公告)日：2007-11-01

申请号：KR1020060038908

申请日：2006-04-28

Applicant: 삼성전자주식회사

Inventor： 박유춘 ,  배도인 ,  이태원 ,  현기철 ,  강연철 ,  이진경

IPC: H01L21/02 ,  H01L21/205

Abstract: An O-ring and a sealing device using the same are provided to prevent or minimize local damage of the O-ring due to incomplete installation thereof by inserting the O-ring in a gland in a perfect state. An O-ring includes a body(12) having a circular cross section and plural flanges(14 to 17) protruding from the body. The flanges are arranged at regular intervals, and have a rectangular cross section protruding from one or both sides of the body, respectively. A first indication line extends straightly in a longitudinal direction of the body, and a second indication line intersects a width of the body.

Abstract translation: 提供O形圈和使用其的密封装置，以通过将O形环插入到完全状态的压盖中来防止或最小化由于其不完全安装而导致的O形环的局部损坏。 O形环包括具有圆形横截面的主体（12）和从主体突出的多个凸缘（14至17）。 凸缘以规则的间隔布置，并且具有分别从主体的一侧或两侧突出的矩形横截面。 第一指示线在身体的纵向方向上直线延伸，并且第二指示线与身体的宽度相交。

公开(公告)号：KR1020070032499A

公开(公告)日：2007-03-22

申请号：KR1020050086777

申请日：2005-09-16

Applicant: 삼성전자주식회사

Inventor： 서기원 ,  배도인 ,  이혁재 ,  이태원 ,  우창우

IPC: H01L21/68

CPC classification number: H01L21/68 ,  Y10S414/136

Abstract: A flat zone alignment apparatus is provided to prevent abrasion of an alignment roller and contamination of wafers by varying a portion of the alignment roller connected to sides of the wafers. A housing(110) accommodates plural wafers vertically and holds down a cassette whose upper and lower portions are opened. An alignment roller(120) is formed in the housing. The alignment roller is contacted to an edge part of a lower portion of the wafers exposed through the lower portion of the cassette. A first driving unit(150) rotates the alignment roller to align a flat zone of the wafers. A second driving unit(160) straight-reciprocates the alignment roller to an extended direction of the central axis of the alignment roller to vary a connecting surface of the alignment roller that is connected with the sides of the wafers.

Abstract translation: 设置平坦区域对准装置，以通过改变连接到晶片侧面的对准辊的一部分来防止对准辊的磨损和晶片的污染。 壳体（110）垂直地容纳多个晶片并且压住其上部和下部打开的盒。 定位辊（120）形成在壳体中。 对准辊与通过盒的下部暴露的晶片的下部的边缘部分接触。 第一驱动单元（150）旋转对准辊以对准晶片的平坦区域。 第二驱动单元（160）使对准辊沿对准辊的中心轴线的延伸方向直线往复运动，以改变与晶片侧面连接的对准辊的连接表面。

公开(公告)号：KR100688573B1

公开(公告)日：2007-03-02

申请号：KR1020050087015

申请日：2005-09-16

Applicant: 삼성전자주식회사

Inventor： 윤수한 ,  양종현 ,  배도인 ,  김성구

IPC: H01L21/265

Abstract: An ion source part is provided to minimize the loss of electrons and ions generated at both ends of a chamber and formation of unnecessary arc by reducing a volume ratio of the inner space at both ends of the chamber. A chamber(100) is provided in which the area of a section of the inner space vertical to an axis extending the center of both ends of the inner space has a maximum value in the center of the inner space and decreases as it goes to both the ends of the inner space. A filament(101) is disposed at one end of the chamber to discharge thermal electrons. A repeller(102) penetrates the other end of the chamber so as to be extended to the inside of the chamber. A gas inlet(103) is formed in the sidewall of the chamber to introduce gas including a dopant species into the chamber. A beam slit(104) extracts an ionization species from the chamber such that the ionization species is generated from the gas, formed in the sidewall of the chamber. The area of the section of the inner space symmetrically decreases from the center of the chamber to both the end of the chamber.

Abstract translation: 提供离子源部件以通过减小腔室两端处的内部空间的体积比率来最小化在腔室两端产生的电子和离子的损失并形成不必要的电弧。 提供了腔室（100），其中内部空间的垂直于延伸到内部空间的两端的中心的轴线的截面的面积在内部空间的中心处具有最大值并且随着朝向两者而减小 内部空间的末端。 灯丝（101）设置在腔室的一端以释放热电子。 推斥器（102）穿过腔室的另一端以延伸到腔室的内部。 气体入口（103）形成在腔室的侧壁中以将包括掺杂物质的气体引入腔室中。 光束狭缝（104）从腔室提取电离物质，使得电离物质从在腔室的侧壁中形成的气体产生。 内腔的截面面积从腔室的中心到腔室的两端对称地减小。