公开(公告)号：KR1020130006899A

公开(公告)日：2013-01-18

申请号：KR1020110062031

申请日：2011-06-27

Applicant: 삼성전자주식회사

Inventor： 오규환 ,  배병재 ,  임동현 ,  박두환

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683 ,  H01L45/1691

Abstract: PURPOSE: A phase change memory device and a manufacturing method thereof are provided to reduce cell resistance between word lines by burying a metal silicide pattern in an active region. CONSTITUTION: An impurity region(135) is formed on the upper side of an active region of a substrate. A metal silicide pattern(130) is buried in the impurity region. A diode(149) is formed on the impurity region. A bottom electrode is formed on the diode. A phase change film pattern is formed on the bottom electrode. [Reference numerals] (AA) Second direction; (BB) First direction

Abstract translation: 目的：提供一种相变存储器件及其制造方法，通过在活性区域中埋入金属硅化物图案来减小字线之间的电池电阻。 构成：在衬底的有源区的上侧形成杂质区（135）。 金属硅化物图案（130）埋在杂质区域中。 在杂质区上形成二极管（149）。 在二极管上形成底电极。 在底部电极上形成相变膜图形。 （附图标记）（AA）第二方向; （BB）第一方向

公开(公告)号：KR1020110118356A

公开(公告)日：2011-10-31

申请号：KR1020100037911

申请日：2010-04-23

Applicant: 삼성전자주식회사

Inventor： 주흥진 ,  오재희 ,  배병재 ,  강명진

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/1683 ,  H01L45/04 ,  H01L21/31051 ,  H01L27/2454

Abstract: 가변 저항 메모리 소자 및 그 제조 방법을 제공한다. 셀 영역 및 주변 영역을 포함하는 기판을 준비하고, 상기 주변 영역에 주변 트랜지스터를 형성하고, 상기 주변 트랜지스터 및 상기 기판을 덮는 층간 절연막을 형성하고, 상기 층간 절연막을 패터닝하여 상기 셀 영역에 리세스 영역을 형성하고, 상기 리세스 영역 및 상기 층간 절연막 상에 가변 저항 물질막을 형성하고, 상기 주변 영역의 상기 가변 저항 물질막을 제거하고, 평탄화 공정에 의하여 가변 저항 물질 패턴을 형성한다.

Abstract translation: 形成可变电阻存储器件的方法包括图案化层间电介质层以限定其中可露出可变电阻存储单元的底部电极的开口，在衬底（例如，半导体衬底）的存储单元区域上。 这些方法还包括在开口中的暴露的底部电极上沉​​积可变电阻材料层（例如，相变材料），并且延伸到与衬底的外围电路区域相对延伸的层间电介质层的第一部分上。 然后依次选择性地蚀刻可变电阻材料层和层间电介质层的第一部分，以在层间介质层中限定凹陷。 然后将可变电阻材料层和层间电介质层平坦化，以在开口内限定可变电阻图案。

公开(公告)号：KR1020100082693A

公开(公告)日：2010-07-19

申请号：KR1020090010251

申请日：2009-02-09

Applicant: 삼성전자주식회사

Inventor： 김성훈 ,  임채만 ,  강인태 ,  조준영 ,  배병재

IPC: H04W74/08

CPC classification number: H04W74/08 ,  H04W74/0816 ,  H04W74/0833 ,  H04W74/085

Abstract: PURPOSE: A device and a method for controlling random access process of a user equipment in a wireless communication system are provided to enable a TA timer to reduce the inverse transmission in wrong inverse transmission timing when a driving terminal performs a random access procedure. CONSTITUTION: An N_TA(Timing Adjusting) is adjusted to '0' and a preamble is transmitted during random access(410), and an inverse transmission timing is adjusted by being adjusted to a TA command of a message received to a base station and a TA timer is restarted(425). A connection resolution message is received from a base station, and the TA timer is stopped and a random access procedure is restarted while transmitting the preamble if a contention resolution is failed.

Abstract translation: 目的：提供一种用于在无线通信系统中控制用户设备的随机接入过程的装置和方法，以使TA定时器能够在驱动终端执行随机接入过程时减少错误的反向传输定时中的反向传输。 构成：将N_TA（时序调整）调整为“0”，在随机接入（410）期间发送前导码，并且通过调整到接收到基站的消息的TA命令来调整逆发送定时， TA定时器重启（425）。 从基站接收到连接解析消息，并且如果竞争解决失败，则TA定时器被停止并且在发送前导码的同时重新开始随机接入过程。

公开(公告)号：KR1020090037121A

公开(公告)日：2009-04-15

申请号：KR1020070102585

申请日：2007-10-11

Applicant: 삼성전자주식회사

Inventor： 배병재 ,  조성래 ,  이진일 ,  박혜영 ,  김도형

IPC: H01L21/205 ,  H01L27/115

CPC classification number: H01L45/06 ,  C23C16/305 ,  C23C16/45534 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691 ,  H01L45/143

Abstract: A method for forming a phase change material film using a Ge(II) source and a manufacturing method of a phase change memory device are provided to reduce a grain size by reducing a deposition temperature in a phase change material film forming process. A substrate is loaded inside a reaction chamber(S10). The reaction chamber has a cold wall type or a hot wall type. The cold wall type reaction chamber includes a substrate stage having a heating line and a shower head. The hot wall type reaction chamber includes a heating line. A reaction gas is supplied inside the reaction chamber(S20), and has an NH2 group. The reaction gas is one gas selected from groups made of ammonia, primary amine, and hydrazine. A Ge(II) source as a first source is supplied inside the reaction chamber(S30). A second source is supplied inside the reaction chamber(S40). A phase change material film containing Ge is formed on a top part of the substrate(S50).

Abstract translation: 提供了使用Ge（II）源形成相变材料膜的方法和相变存储器件的制造方法，以通过降低相变材料膜形成工艺中的沉积温度来降低晶粒尺寸。 将基板装载到反应室内（S10）。 反应室具有冷壁型或热壁型。 冷壁型反应室包括具有加热线和淋浴头的基底台。 热壁式反应室包括加热管线。 在反应室内供给反应气体（S20），具有NH 2基团。 反应气体是选自氨，伯胺和肼组成的一种气体。 作为第一源的Ge（II）源被供应到反应室内（S30）。 在反应室内供给第二源（S40）。 在基板的顶部形成含有Ge的相变材料膜（S50）。

公开(公告)号：KR1020090036530A

公开(公告)日：2009-04-14

申请号：KR1020080099160

申请日：2008-10-09

Applicant: 삼성전자주식회사

Inventor： 주양익 ,  김성훈 ,  배병재

IPC: H04L29/06 ,  H04L29/02 ,  H04L12/28 ,  H04B7/26

CPC classification number: H04W28/065 ,  H04B2201/70724 ,  H04J2211/005

Abstract: An apparatus and a method for generating and separating an MAC(Media Access Control) PDU(Protocol Data Unit) are provided to increase a data processing speed by simplifying an MAC PDU configuration process. An RLC(Radio Link Control) unit confirms an LCID(Logical Channel Identifier) of an MAC SDU(Service Data Unit). The RLC unit confirms the size of the preset length field and sets the size of the length field for the MAC SDU. The header generator generates the MAC header including the length field and the LCID for the MAC SDU(513). The header generator adds the MAC header to a payload including the MAC SDU and generates the MAC PDU(515). The multiplexer multiplexes the MAC header and the MAC SDU.

Abstract translation: 提供了一种用于生成和分离MAC（媒体访问控制）PDU（协议数据单元）的装置和方法，以通过简化MAC PDU配置处理来提高数据处理速度。 RLC（无线链路控制）单元确认MAC SDU（服务数据单元）的LCID（逻辑信道标识符）。 RLC单元确认预设长度字段的大小，并设置MAC SDU的长度字段的大小。 标题生成器生成包括MAC SDU（513）的长度字段和LCID的MAC头。 报头生成器将MAC报头添加到包括MAC SDU的有效载荷中，并生成MAC PDU（515）。 复用器复用MAC报头和MAC SDU。

公开(公告)号：KR1020080098237A

公开(公告)日：2008-11-07

申请号：KR1020070043664

申请日：2007-05-04

Applicant: 삼성전자주식회사

Inventor： 조성래 ,  배병재 ,  이진일 ,  박혜영 ,  박영림 ,  김락환

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1666

Abstract: A phase change material memory device and a method for forming the same are provided to reduce the contact area between the conductor and the phase change material layer. A phase change material memory device comprises the first insulating layer(60) which is provided to the top of the substrate and limits the opening(70); the first part provided to the bottom of the opening; the first conductor(95) including the second part which successively is provided from the first part along the side wall of opening; the variable resistance(113) which is connected to the second part of the first conductor and is provided along the side wall of opening; the second conductor provided on the variable resistance.

Abstract translation: 提供相变材料存储装置及其形成方法以减少导体与相变材料层之间的接触面积。 相变材料存储装置包括设置在基板的顶部并限制开口（70）的第一绝缘层（60）。 第一部分提供到开口的底部; 所述第一导体（95）包括沿着所述开口的侧壁从所述第一部分连续设置的所述第二部分; 所述可变电阻器（113）连接到所述第一导体的第二部分并沿着开口的侧壁设置; 第二导体提供在可变电阻上。

公开(公告)号：KR1020080076811A

公开(公告)日：2008-08-20

申请号：KR1020080013592

申请日：2008-02-14

Applicant: 삼성전자주식회사

Inventor： 김혜정 ,  이도영 ,  이현구 ,  배병재 ,  김영택

IPC: H04B1/40

CPC classification number: G06F13/387 ,  H04L69/22 ,  H04W80/04 ,  H04W88/02

Abstract: A data processing method of a mobile communication system and a device thereof are provided to perform a header process and a payload data process in parallel, while two memory devices can carry out parallel processing without sharing a bus. Two dual port memories are separated into a downlink memory(710) and an uplink memory(720) by using internal memories. Each one port of the respective memories is connected to a bus matrix(730) while the other ports are connected to IP(Internet Protocol) devices such as a modem(760), an external interface device(750), and an encryption/decryption unit(740) through a direct bus. Further, the IP(Internet Protocol) devices contain a DMA(Direct Memory Access).

Abstract translation: 提供移动通信系统的数据处理方法及其装置，以并行地执行报头处理和有效载荷数据处理，而两个存储器装置可以在不共享总线的情况下进行并行处理。 通过使用内部存储器将两个双端口存储器分离成下行链路存储器（710）和上行链路存储器（720）。 各个存储器的每个端口连接到总线矩阵（730），而其他端口连接到IP（因特网协议）设备，例如调制解调器（760），外部接口设备（750）和加密/解密 单元（740）通过直接总线。 此外，IP（因特网协议）设备包含DMA（直接存储器访问）。

公开(公告)号：KR1020080070360A

公开(公告)日：2008-07-30

申请号：KR1020070008351

申请日：2007-01-26

Applicant: 삼성전자주식회사

Inventor： 임동현 ,  배병재 ,  김익수 ,  유동철 ,  허장은

IPC: C23C16/448 ,  C23C16/00 ,  C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/52

Abstract: A chemical vapor deposition facility is provided to diffuse the gas supplied to the inside of a chamber through shower heads to form a uniform deposition layer on a front surface of a wafer, thereby keeping normal features of the layer. A chemical vapor deposition facility comprises a chamber(200), and shower heads(300). The chamber has a chuck on which a wafer is mounted. The shower heads, which are installed in the chamber, pass process gas supplied from the outside through multilayer boundaries and spray the process gas on a front surface of the wafer. The shower heads have different diameters. The chamber has a cooling unit(400). The cooling unit has a coolant supply part(420), cooling lines(410), a sensor(430), and a control part(440). The cooling lines receive the coolant and circulate the coolant. The sensor detects a temperature value of the shower head. The control part compares the detected temperature value with a reference temperature value.

Abstract translation: 提供化学气相沉积设备以通过喷淋头将供应到室内的气体扩散以在晶片的前表面上形成均匀的沉积层，从而保持该层的正常特征。 化学气相沉积设备包括室（200）和淋浴头（300）。 该腔室具有其上安装有晶片的卡盘。 安装在室中的喷头通过多层边界从外部供给工艺气体，并将工艺气体喷射在晶片的前表面上。 淋浴头具有不同的直径。 腔室具有冷却单元（400）。 冷却单元具有冷却剂供应部分（420），冷却管线（410），传感器（430）和控制部分（440）。 冷却管路接收冷却液并使冷却液循环。 传感器检测淋浴头的温度值。 控制部分将检测到的温度值与参考温度值进行比较。

公开(公告)号：KR1020080026746A

公开(公告)日：2008-03-26

申请号：KR1020060091691

申请日：2006-09-21

Applicant: 삼성전자주식회사

Inventor： 배병재 ,  박영림 ,  안상엽 ,  조성래 ,  이진일 ,  박혜영 ,  임지은

IPC: H01L21/02

Abstract: A method for cleaning a deposition chamber is provided to improve operational efficiency of deposition equipment and to secure a stable process condition by reducing a cleaning process time. A wafer unloading process is performed to unload a wafer from a chamber for performing a deposition process under a predetermined deposition condition(10). A cleaning gas supply process is performed to supply a cleaning gas into the chamber without causing a change of deposition temperature and a change of process atmosphere(20). An excitation process is performed to excite the cleaning gas within the chamber(30). A reactant exhausting process is performed to exhaust a reactant by inducing a reaction between the excited cleaning gas and a deposit within the chamber(40).

Abstract translation: 提供了用于清洁沉积室的方法，以提高沉积设备的操作效率并通过减少清洗处理时间来确保稳定的工艺条件。 执行晶片卸载处理以在预定沉积条件（10）下从用于执行沉积工艺的室中卸载晶片。 执行清洁气体供应过程以将清洁气体供应到室中而不引起沉积温度的改变和处理气氛的变化（20）。 执行激发过程以激发腔室（30）内的清洁气体。 通过引发被激发的清洁气体与室（40）内的沉积物之间的反应来进行反应物排出过程以排出反应物。

公开(公告)号：KR100791077B1

公开(公告)日：2008-01-03

申请号：KR1020060126832

申请日：2006-12-13

Applicant: 삼성전자주식회사

Inventor： 박영림 ,  조성래 ,  배병재 ,  이진일 ,  박혜영 ,  임지은

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/148 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/1691 ,  H01L21/76224

Abstract: A phase change memory device having a small transition volume and a method for forming the same are provided to reduce remarkably current necessary for converting the transition volume to a crystalline state or an amorphous state. A bottom electrode(75) is formed on a top surface of a substrate(51). An interlayer dielectric includes a contact hole for exposing the bottom electrode and is formed to cover the interlayer dielectric. A resistant material pattern(79) is formed to fill up the contact hole. A phase change pattern(77) is inserted between the resistant material pattern and the interlayer dielectric and is extended between the resistant material pattern and the bottom electrode. A top electrode(85) comes in contact with the phase change pattern. The resistant material pattern has a resistance higher than that of the phase change pattern. The top electrode is electrically connected through the phase change pattern to the bottom electrode.

Abstract translation: 提供具有小过渡体积的相变存储器件及其形成方法，以将过渡体积转换为结晶状态或非晶态所需的显着电流降低。 底部电极（75）形成在基板（51）的顶表面上。 层间电介质包括用于暴露底部电极的接触孔，并形成为覆盖层间电介质。 形成电阻材料图案（79）以填充接触孔。 相变图案（77）插入在电阻材料图案和层间电介质之间，并且在电阻材料图案和底部电极之间延伸。 顶部电极（85）与相变图案接触。 电阻材料图案具有比相变图案高的电阻。 顶部电极通过相变图案电连接到底部电极。