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公开(公告)号：KR1020110071710A
公开(公告)日：2011-06-29
申请号：KR1020090128344
申请日：2009-12-21
IPC: G11C11/15 , H01L27/115
CPC classification number: H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/10 , B82Y25/00 , G11C11/16 , Y10S977/935
Abstract: PURPOSE: A perpendicular magnetic tunnel junction, a magnetic device comprising the same and a method of manufacturing the same are provided to make the spin torque switching of a MTJ fast reducing a switching time. CONSTITUTION: In a perpendicular magnetic tunnel junction, a magnetic device comprising the same and a method of manufacturing the same, a tunneling layer(34) is formed on a lower magnetic layer(L1). An upper magnetic layer(U1) is formed on the tunneling layer. The magnetization direction of one of the upper and lower magnetic layers is changed by a spin polarization current One magnetic layer comprises a free layer(40) indicates a vertical magnetic anisotropy A polarization reinforcement layer and an interface barrier layer are laminated between the tunneling layer and the free layer.
Abstract translation: 目的：提供垂直磁性隧道结，包括该磁场的磁性装置及其制造方法，以使MTJ的自旋转矩切换快速地减少切换时间。 构成：在垂直磁性隧道结中，包括该磁性装置的磁性装置及其制造方法，在下部磁性层（L1）上形成有隧道层（34）。 在隧道层上形成上磁层（U1）。 上磁层和下磁层之一的磁化方向由自旋极化电流改变一个磁性层包括一个表示垂直磁各向异性的自由层（40），一个偏振加强层和界面阻挡层层叠在隧穿层与 自由层。
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42.发明公开
公开(公告)号：KR1020110065093A
公开(公告)日：2011-06-15
申请号：KR1020090121938
申请日：2009-12-09
Applicant: 삼성전자주식회사
CPC classification number: H03K19/1733 , G11C14/0054 , G11C14/009 , H03K3/356008 , H03K3/356182
Abstract: PURPOSE: A nonvolatile logic circuit, an integrated circuit including the nonvolatile logic circuit and a method of operating the integrated circuit are provided to stably drive a nonvolatile logic circuit by performing wiring data in a pair of nonvolatile memories only when an write enable signal is activated. CONSTITUTION: In a nonvolatile logic circuit, an integrated circuit including the nonvolatile logic circuit and a method of operating the integrated circuit, a latch unit(11) has a pair of latch nodes. A pair of nonvolatile memory cells(12,13) perform wiring different data. A pair of nonvolatile memory cells receives first and second write voltage which are different. A general operation selection unit(14) prevent first and second nonvolatile memory cell from being connected to the latch unit. A read operation selection unit(15) applies data stored in the nonvolatile memory cell to the first and second latch nodes. A write operation selection unit(16) applies first and second write voltage which are different to the first and second nonvolatile memory cell. An equalizer(17) equalize the voltage of the first and second latch node.
Abstract translation: 目的：提供一种非易失性逻辑电路，包括非易失性逻辑电路的集成电路和一种操作集成电路的方法，用于仅当写使能信号被激活时才通过执行一对非易失性存储器中的布线数据来稳定地驱动非易失性逻辑电路 。 构成：在非易失性逻辑电路中，包括非易失性逻辑电路的集成电路和操作集成电路的方法，锁存单元（11）具有一对锁存节点。 一对非易失性存储单元（12,13）执行布线不同的数据。 一对非易失性存储单元接收不同的第一和第二写入电压。 通用操作选择单元（14）防止第一和第二非易失性存储单元连接到锁存单元。 读取操作选择单元（15）将存储在非易失性存储单元中的数据应用于第一和第二锁存节点。 写入操作选择单元（16）施加与第一和第二非易失性存储器单元不同的第一和第二写入电压。 均衡器（17）使第一和第二锁存节点的电压相等。
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公开(公告)号：KR1020110052300A
公开(公告)日：2011-05-18
申请号：KR1020090109283
申请日：2009-11-12
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0206 , B82Y30/00 , B82Y40/00 , C01B32/15 , Y10T156/1041 , C01B32/194 , B82B3/0061 , C23C16/26
Abstract: PURPOSE: A method for manufacturing large-sized graphene and a method for transferring the large-sized graphene are provided to easily separate the large-sized graphene from a catalyst layer. CONSTITUTION: A method for transferring large-sized graphene includes the following: A graphene layer(120) is formed on a substrate. A protective layer(130) and an adhesive layer(140) are successively formed on the graphene layer. The exposed surface of the substrate is cut. Hydrophilic liquid applied to the substrate, and the substrate is eliminated from the graphene layer. The protective layer and the adhesive layer are eliminated.
Abstract translation: 目的：提供大型石墨烯的制造方法和转印大尺寸石墨烯的方法，以容易地将大型石墨烯与催化剂层分离。 构成：用于转移大尺寸石墨烯的方法包括以下：在基板上形成石墨烯层（120）。 在石墨烯层上依次形成保护层（130）和粘合剂层（140）。 切割基板的露出表面。 施加到基板上的亲水性液体，从石墨烯层除去基板。 消除了保护层和粘合剂层。
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公开(公告)号：KR1020110037037A
公开(公告)日：2011-04-13
申请号：KR1020090094281
申请日：2009-10-05
Applicant: 삼성전자주식회사
CPC classification number: H03B15/006
Abstract: PURPOSE: An oscillator and a method for operating the same are provided to simplify the operation by forming a spin torque oscillator with high output power. CONSTITUTION: A first and a second free layers(10,20) are separated from each other. A nonmagnetic layer(15) is placed in the middle of the free layers. The magnetization direction of the first and the second free layers can be changed. The first and the second free layers can have a perpendicular magnetic anisotropy or an in-plane magnetic anisotropy.
Abstract translation: 目的：提供振荡器及其操作方法，以通过形成具有高输出功率的自旋扭矩振荡器来简化操作。 构成：第一和第二自由层（10,20）彼此分离。 非磁性层（15）被放置在自由层的中间。 可以改变第一和第二自由层的磁化方向。 第一和第二自由层可以具有垂直的磁各向异性或面内的磁各向异性。
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公开(公告)号：KR1020110009979A
公开(公告)日：2011-01-31
申请号：KR1020090067461
申请日：2009-07-23
Applicant: 삼성전자주식회사
IPC: H03B9/12
CPC classification number: H03B15/006 , Y10T428/1121
Abstract: PURPOSE: An oscillator using a magnetic domain wall and an operating method thereof are provided to reduce a critical current for oscillation with high output power and high quality factor. CONSTITUTION: A free layer(100) is formed on a substrate and includes a first area(10) in the center and a second area(20) extended to both sides. The width of the second area is wider than the width of the first area. The first area with relatively narrow width is formed between two second areas which are separated from each other. The first area connects the center of two second areas. The free layer has a square groove on both sides thereof. A magnetic domain wall is positioned in the first area with the relatively narrow width and is a boundary of two adjacent magnetic domains which are oppositely magnetized.
Abstract translation: 目的：提供使用磁畴壁的振荡器及其操作方法，以便以高输出功率和高品质因数降低用于振荡的临界电流。 构成：在衬底上形成自由层（100），并且包括在中心的第一区域（10）和延伸到两侧的第二区域（20）。 第二区域的宽度比第一区域的宽度宽。 宽度相对较窄的第一区域形成在彼此分离的两个第二区域之间。 第一个区域连接两个第二区域的中心。 自由层的两侧具有方形凹槽。 磁畴壁位于具有较窄宽度的第一区域中，并且是相对磁化的两个相邻磁畴的边界。
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Patent Agency Ranking
公开(公告)号：KR1020100040222A
公开(公告)日：2010-04-19
申请号：KR1020080099353
申请日：2008-10-09
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/7613 , B82Y10/00 , H01L29/1029 , H01L29/16 , H01L29/1606 , H01L29/66977
Abstract: PURPOSE: A quantum interference transistor using a grapheme and a method for manufacturing and operating the same are provided to widen the application range of the transistor by forming a source, a drain and a channel with a graphene sheet. CONSTITUTION: Channels include a plurality of passages between a source(40) and a drain(42). A gate(56G) is arranged on the channels. The channels are graphene sheets. The gate is arranged on the upper side and the lower side of the graphene sheets. A gate insulation layer is arranged between the gate and the graphene sheets. The gate covers a part of the graphene sheet channels.
Abstract translation: 目的：提供使用图形的量子干涉晶体管及其制造和操作方法，以通过用石墨烯片形成源极，漏极和沟道来扩大晶体管的应用范围。 构成：通道包括在源（40）和排水口（42）之间的多个通道。 通道上设有一个门（56G）。 通道是石墨烯片。 栅极布置在石墨烯片的上侧和下侧。 栅极绝缘层设置在栅极和石墨烯片之间。 门覆盖石墨烯片通道的一部分。
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公开(公告)号：KR1020090106169A
公开(公告)日：2009-10-08
申请号：KR1020080031714
申请日：2008-04-04
Applicant: 삼성전자주식회사
IPC: H01F27/00
CPC classification number: H01F17/0006 , H01F21/005 , H01F21/02 , H01F27/34 , H01F41/045 , H03H2001/0092
Abstract: PURPOSE: An inductor and an operating method thereof are provided to secure uniformity and reproduction and prevent problem due to misalignment using graphene. CONSTITUTION: An inductor includes a conductive line(C1), a first electrode(E1), a second electrode(E2), and a first unit. The conductive line includes a first material whose electric resistance is changed according to the electric field. The first material includes a graphene. The first electrode and the second electrode are electrically connected to both sides of the conductive line. The first unit applies the electric field to the conductive line. The first unit is a conductor(100) separated from the conductive line.
Abstract translation: 目的：提供电感器及其操作方法以确保均匀性和再现性，并且防止由于使用石墨烯的不对准而引起的问题。 构成：电感器包括导线（C1），第一电极（E1），第二电极（E2）和第一单元。 导线包括其电阻根据电场而改变的第一材料。 第一种材料包括石墨烯。 第一电极和第二电极电连接到导线的两侧。 第一单元将电场施加到导线上。 第一单元是与导线分离的导体（100）。
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公开(公告)号：KR1020090105788A
公开(公告)日：2009-10-07
申请号：KR1020080099777
申请日：2008-10-10
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L27/228 , H01L21/28273 , H01L21/28291 , H01L43/04 , H01L43/12
Abstract: PURPOSE: A magnetic memory device, and a method for writing and reading the information are provided to reduce critical current density while minimizing MR(Magnetoresistance) by changing the magnetization direction of a free layer. CONSTITUTION: A magnetization direction is fixed in a fixing layer by an anti-ferroelectric material layer(11). A first nonmagnetic layer(13) is formed on the fixing layer. An information storage layer(14) is formed on the first nonmagnetic layer. A second nonmagnetic layer(15) is formed on the information storage layer. The second nonmagnetic layer is formed on the information storage layer. A free layer(16) is formed on the second nonmagnetic layer and changes the magnetization direction.
Abstract translation: 目的：提供一种磁存储器件以及用于写入和读取信息的方法，以通过改变自由层的磁化方向来最小化MR（磁阻）来降低临界电流密度。 构成：通过反铁电材料层（11）在固定层中固定磁化方向。 第一非磁性层（13）形成在固定层上。 信息存储层（14）形成在第一非磁性层上。 第二非磁性层（15）形成在信息存储层上。 第二非磁性层形成在信息存储层上。 自由层（16）形成在第二非磁性层上并改变磁化方向。
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公开(公告)号：KR1020090105733A
公开(公告)日：2009-10-07
申请号：KR1020080031363
申请日：2008-04-03
Applicant: 삼성전자주식회사
IPC: G11C11/15
CPC classification number: G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/15 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: PURPOSE: A magnetic random access memory using a domain wall motion and current induction magnetic switching method is provided to improve integration by implementing the driving with only the write current of one direction. CONSTITUTION: A magnetic random access memory includes a switch structure(11), a data storing layer(13), a free layer(15), an intermediate electrode(12), an intermediate layer(14). The data storing layer is formed on the switch structure. The free layer is formed on the data storing layer. Two magnetic domains with difference magnetization direction or more are formed in the free layer. The intermediate electrode is formed between the switch structure and the data storing layer. The intermediate layer is formed between the data storing layer and the free layer.
Abstract translation: 目的：提供一种使用域壁运动和电流感应磁切换方法的磁性随机存取存储器，通过仅通过一个方向的写入电流实现驱动来提高集成度。 构成：磁性随机存取存储器包括开关结构（11），数据存储层（13），自由层（15），中间电极（12），中间层（14）。 数据存储层形成在开关结构上。 自由层形成在数据存储层上。 在自由层中形成具有不同磁化方向或更大的两个磁畴。 中间电极形成在开关结构和数据存储层之间。 中间层形成在数据存储层和自由层之间。
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公开(公告)号：KR1020090016307A
公开(公告)日：2009-02-13
申请号：KR1020070080844
申请日：2007-08-10
Applicant: 삼성전자주식회사
CPC classification number: G11C11/14 , G11C19/0808 , Y10S977/933
Abstract: An information storage apparatus using magnetic domain wall movement is provided to increase recording density and reduce power consumption by forming the magnetism magnetic track for data storage with ferromagnetic substance having the vertical magnetic anisotropy. An information storage apparatus using magnetic domain wall movement comprises a magnetic track(200) having a plurality of magnetic domains, a current application unit connected to the magnetic track, and a read/write unit(25). The magnetic track includes a zigzag type storage track(T1) having a plurality of first magnetic layers which are laminated in parallel at certain intervals and a second magnetic layer interconnecting the first magnetic layers.
Abstract translation: 提供使用磁畴壁移动的信息存储装置，通过用具有垂直磁各向异性的铁磁物质形成用于数据存储的磁性磁道来增加记录密度并降低功耗。 使用磁畴壁运动的信息存储装置包括具有多个磁畴的磁道（200），连接到磁道的电流施加单元和读/写单元（25）。 磁道包括具有多个第一磁性层的锯齿形存储轨道（T1），该多个第一磁性层以一定间隔平行层叠，第二磁性层互连第一磁性层。
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