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    대면적 그라핀의 제조방법 및 전사방법
    1.
    发明公开
    대면적 그라핀의 제조방법 및 전사방법 有权
    制作大尺度石墨和传输大尺度图形的方法

    公开(公告)号：KR1020110052300A

    公开(公告)日：2011-05-18

    申请号：KR1020090109283

    申请日：2009-11-12

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 우윤성 ,  서형석 ,  배수강 ,  서순애 ,  정현종 ,  강새라 ,  허진성 ,  정명희

    IPC: C01B31/02 ,  C23C16/26

    CPC classification number: C01B31/0206 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  Y10T156/1041 ,  C01B32/194 ,  B82B3/0061 ,  C23C16/26

    Abstract: PURPOSE: A method for manufacturing large-sized graphene and a method for transferring the large-sized graphene are provided to easily separate the large-sized graphene from a catalyst layer. CONSTITUTION: A method for transferring large-sized graphene includes the following: A graphene layer(120) is formed on a substrate. A protective layer(130) and an adhesive layer(140) are successively formed on the graphene layer. The exposed surface of the substrate is cut. Hydrophilic liquid applied to the substrate, and the substrate is eliminated from the graphene layer. The protective layer and the adhesive layer are eliminated.

    Abstract translation: 目的：提供大型石墨烯的制造方法和转印大尺寸石墨烯的方法，以容易地将大型石墨烯与催化剂层分离。 构成：用于转移大尺寸石墨烯的方法包括以下：在基板上形成石墨烯层（120）。 在石墨烯层上依次形成保护层（130）和粘合剂层（140）。 切割基板的露出表面。 施加到基板上的亲水性液体，从石墨烯层除去基板。 消除了保护层和粘合剂层。

    한 개의 그래핀 트랜지스터로 이루어진 메모리 소자와 그 제조 및 동작방법
    3.
    发明公开
    한 개의 그래핀 트랜지스터로 이루어진 메모리 소자와 그 제조 및 동작방법 无效
    包含一个石墨晶体管的存储器件及其制造和操作方法

    公开(公告)号：KR1020130077405A

    公开(公告)日：2013-07-09

    申请号：KR1020110146099

    申请日：2011-12-29

    Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

    Inventor： 유원종 ,  이대영 ,  장강 ,  라창호 ,  임영대 ,  정현종 ,  최재영

    IPC: H01L27/108 ,  H01L21/8242

    CPC classification number: H01L29/792 ,  H01L29/4234 ,  H01L29/66833

    Abstract: PURPOSE: A memory device consisting of one graphene transistor and a method for manufacturing and operating the same are provided to perform a high speed operation by using a graphene channel. CONSTITUTION: A first, a second, and a third electrode are separated from each other. A graphene layer (34) is in contact with the second and the third electrode. The graphene layer is insulated from the first electrode. The graphene layer is a memory layer. The graphene layer has the density of charge trap sites.

    Abstract translation: 目的：提供由一个石墨烯晶体管组成的存储器件及其制造和操作方法，以通过使用石墨烯通道来执行高速操作。 构成：第一，第二和第三电极彼此分离。 石墨烯层（34）与第二和第三电极接触。 石墨烯层与第一电极绝缘。 石墨烯层是记忆层。 石墨烯层具有电荷陷阱位置的密度。

    그래핀을 이용한 광 변조기
    8.
    发明公开
    그래핀을 이용한 광 변조기 审中-实审
    使用石墨的光学调制器

    公开(公告)号：KR1020130042906A

    公开(公告)日：2013-04-29

    申请号：KR1020110107056

    申请日：2011-10-19

    Applicant: 삼성전자주식회사

    Inventor： 조성호 ,  정현종

    IPC: G02B6/12 ,  G02B6/293 ,  G02B26/06

    CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2202/02

    Abstract: PURPOSE: An optical modulator using graphene is provided to increase a modulation depth and reduce the size of the optical modulator by increasing the optical absorption of the graphene through arranging the two graphene connected to an electrode at the center of an optical wave guide. CONSTITUTION: An optical modulator(100) using graphene comprises first and second graphene(141,142) positioned on the upper side of a semiconductor layer(120), a first electrode(161) positioned on the first graphene, and a second electrode(162) positioned on the second graphene. One side of the first graphene and one side of the second graphene are separately positioned. A first ridge part(124) on the semiconductor layer and a second ridge part(150) on the second graphene form an optical wave guide. The first and second graphene are formed at the center of the vertical surface of the optical wave guide.

    Abstract translation: 目的：提供一种使用石墨烯的光调制器，以通过将连接到光波导中心的电极的两个石墨烯布​​置在一起来增加石墨烯的光吸收，从而增加调制深度并减小光调制器的尺寸。 构成：使用石墨烯的光学调制器（100）包括位于半导体层（120）的上侧的第一和第二石墨烯（141,142），位于第一石墨烯上的第一电极（161）和第二电极（162） 位于第二石墨烯上。 第一石墨烯的一侧和第二石墨烯的一侧分开定位。 半导体层上的第一脊部（124）和第二石墨烯上的第二脊部（150）形成光波导。 第一和第二石墨烯形成在光波导的垂直表面的中心。

    그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터
    9.
    发明公开
    그래핀을 포함하는 전극 구조체 및 전계효과 트랜지스터 审中-实审
    包含石墨和电极效应晶体管的电极结构

    公开(公告)号：KR1020130032105A

    公开(公告)日：2013-04-01

    申请号：KR1020110095813

    申请日：2011-09-22

    Applicant: 삼성전자주식회사

    Inventor： 양희준 ,  박성준 ,  정현종 ,  허진성

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/456 ,  H01L29/1606 ,  H01L29/41725 ,  H01L29/45 ,  H01L29/452 ,  H01L29/78 ,  H01L29/66712

    Abstract: PURPOSE: An electrode structure including graphene and a field effect transistor are provided to reduce the energy barrier by putting graphene between a semiconductor layer and metal. CONSTITUTION: Graphene(120) is formed on a semiconductor layer(110). A graphene layer includes an electrode metal(130). The graphene has a single layer or a double layer. The electrode metal has a size of 30nm or less. The graphene is in direct contact with the semiconductor layer.

    Abstract translation: 目的：提供包括石墨烯和场效应晶体管的电极结构，以通过将石墨烯放在半导体层和金属之间来减少能量势垒。 构成：在半导体层（110）上形成石墨烯（120）。 石墨烯层包括电极金属（130）。 石墨烯具有单层或双层。 电极金属的尺寸为30nm以下。 石墨烯与半导体层直接接触。

    그래핀 전자 소자 및 제조방법
    10.
    发明公开
    그래핀 전자 소자 및 제조방법 有权
    石墨电子器件及其制造方法

    公开(公告)号：KR1020120034419A

    公开(公告)日：2012-04-12

    申请号：KR1020100095971

    申请日：2010-10-01

    Applicant: 삼성전자주식회사

    Inventor： 양희준 ,  서순애 ,  이성훈 ,  정현종 ,  허진성

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842 ,  H01L21/324

    Abstract: PURPOSE: A graphene electronic device and a fabricating method thereof are provided to prevent the inherent characteristic of a graphene channel layer from being damaged by forming a passivation layer or a gate oxide on the graphene channel layer after a thermal process. CONSTITUTION: A gate oxide(112) is formed on a silicon substrate(110). A hydrophobic polymer layer(120) is formed on the gate oxide. A graphene channel layer(130) is formed on the hydrophobic polymer layer. A source electrode(142) and a drain electrode(144) are respectively formed on both ends of the graphene channel layer. A passivation layer(150) covering the graphene channel layer is formed between the source electrode and the drain electrode.

    Abstract translation: 目的：提供石墨烯电子器件及其制造方法，以防止在热处理之后在石墨烯通道层上形成钝化层或栅极氧化物来损害石墨烯通道层的固有特性。 构成：在硅衬底（110）上形成栅氧化层（112）。 在栅极氧化物上形成疏水性聚合物层（120）。 在疏水聚合物层上形成石墨烯通道层（130）。 源极电极（142）和漏电极（144）分别形成在石墨烯通道层的两端。 在源电极和漏电极之间形成覆盖石墨烯沟道层的钝化层（150）。

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