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    금속 나노입자를 이용하고 환원된 그래핀 산화물에 기반한 양쪽극 기억소자 및 이의 제조방법
    42.
    发明公开
    금속 나노입자를 이용하고 환원된 그래핀 산화물에 기반한 양쪽극 기억소자 및 이의 제조방법 有权
    基于使用金属纳米颗粒的还原型氧化亚氮的AMBI-极性存储器件及其制备AMBI-极性存储器件的方法

    公开(公告)号：KR1020110081683A

    公开(公告)日：2011-07-14

    申请号：KR1020100001960

    申请日：2010-01-08

    Applicant: 서울대학교산학협력단

    Inventor： 홍승훈 ,  명성 ,  이형우

    IPC: H01L29/70

    CPC classification number: H01L29/1606 ,  H01L29/66234 ,  H01L29/73

    Abstract: PURPOSE: A bi-polar memory device based on a reduced graphene oxide using a metal nano-particle and a method for preparation of bi-polar memory device are provided to align large amount of graphene to be absorbed on a substrate by a hydrophobic film and a hydrophile film. CONSTITUTION: In a bi-polar memory device based on a reduced graphene oxide using a metal nano-particle and a method for preparation of bi-polar memory device, an oxide is deposited on a substrate. A graphene oxide layer is deoxidized. A metal electrode, an oxide layer, and a metal nano-particle layer, and a gate electrode are laminated.

    Abstract translation: 目的：提供一种基于使用金属纳米颗粒的还原型石墨烯氧化物的二极性存储器件和用于制备双极性存储器件的方法，以通过疏水膜将大量石墨烯排列在衬底上， 亲水膜。 构成：在基于使用金属纳米颗粒的还原型石墨烯氧化物的双极性存储器件和制备双极存储器件的方法中，在衬底上沉积氧化物。 将氧化石墨烯氧化物脱氧。 层叠金属电极，氧化物层，金属纳米粒子层和栅电极。

    투명 도전막
    43.
    发明公开
    투명 도전막 有权
    透明导电膜

    公开(公告)号：KR1020100022904A

    公开(公告)日：2010-03-03

    申请号：KR1020080114587

    申请日：2008-11-18

    Applicant: 서울대학교산학협력단

    Inventor： 홍승훈 ,  성문규

    IPC: H01B1/04 ,  H01B1/08

    CPC classification number: G06F3/0414 ,  G06F3/045 ,  H01B1/04 ,  H01B1/08

    Abstract: PURPOSE: A transparent conductive film including an indium tin oxide material is provided to improve electric conduction and mechanical stability of a touch screen when applied to a touch screen. CONSTITUTION: A transparent conductive film(100) comprises a carbon nanotube network and an indium tin oxide composite. A method for preparing the transparent conductive film comprises the steps of: providing a transparent substrate(102); arranging a metallic carbon nanotube solution on a transparent substrate; forming a metallic carbon nanotube network layer(104) with the metallic carbon nanotube solution; and arranging an indium tin oxide layer(106) on the metallic carbon nanotube network layer.

    Abstract translation: 目的：提供一种包括氧化铟锡材料的透明导电膜，用于在触摸屏上使用时提高触摸屏的导电性和机械稳定性。 构成：透明导电膜（100）包括碳纳米管网络和氧化铟锡复合物。 制备透明导电膜的方法包括以下步骤：提供透明基材（102）; 在透明基板上设置金属碳纳米管溶液; 用金属碳纳米管溶液形成金属碳纳米管网络层（104）; 以及在所述金属碳纳米管网络层上配置氧化铟锡层（106）。

    그래핀 나노 소자의 제조방법.
    44.
    发明公开
    그래핀 나노 소자의 제조방법. 有权
    一种制造石墨纳米器件的方法

    公开(公告)号：KR1020100016929A

    公开(公告)日：2010-02-16

    申请号：KR1020080076585

    申请日：2008-08-05

    Applicant: 서울대학교산학협력단

    Inventor： 홍승훈 ,  이주형 ,  김태현

    IPC: H01L21/027 ,  B82B3/00 ,  B82Y40/00

    CPC classification number: H01L29/16 ,  B82Y10/00 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  B82B3/0009 ,  B82Y40/00

    Abstract: PURPOSE: A method of fabricating a graphene nano-device is provided to form a graphene nano structure without the damage of a graphene film by using an oxide nano structure aligned as mask to implement the anisotropic etching. CONSTITUTION: A graphene layer(120) is bonded on the substrate(110). The substrate is dipped into the liquid Including sn oxide nanostructure(130). The oxide nano structure of being included in solution is adsorbed in the graphene film. The oxide nano structure of being adsorbed on the graphene film is arranged to the predetermined direction. The anisotropic etching is implemented using the oxide nano structure of being arranged as mask. The oxide nano structure of remaining after the anisotropic etching is removed. The anisotropic etching the ion beam etching which it is proceeded by using the oxide nano structure arranged as mask.

    Abstract translation: 目的：提供一种制造石墨烯纳米器件的方法以通过使用排列为掩模的氧化物纳米结构来形成石墨烯纳米结构而不损害石墨烯膜，以实现各向异性蚀刻。 构成：石墨烯层（120）结合在基底（110）上。 将衬底浸入包括Sn氧化物纳米结构（130）的液体中。 包含在溶液中的氧化物纳米结构被吸附在石墨烯膜中。 吸附在石墨烯膜上的氧化物纳米结构被布置成预定方向。 使用被设置为掩模的氧化物纳米结构来实现各向异性蚀刻。 除去各向异性蚀刻后剩余的氧化物纳米结构。 通过使用排列为掩模的氧化物纳米结构进行离子束蚀刻的各向异性蚀刻。

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