公开(公告)号：KR100937591B1

公开(公告)日：2010-01-20

申请号：KR1020070132339

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균 ,  박정우 ,  김경옥

IPC: H01L31/12

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: 반도체 광전 집적회로 및 그 형성 방법을 제공한다. 이 반도체 광전 집적회로는 기판 상에 배치되고 입력단 및 출력단을 포함하는 광도파로, 광도파로 상에 형성된 광 격자, 및 광 격자 상에 배치된 광 능동 소자를 포함한다.

公开(公告)号：KR100907250B1

公开(公告)日：2009-07-10

申请号：KR1020070127813

申请日：2007-12-10

Applicant: 한국전자통신연구원

Inventor： 이종무 ,  김덕준 ,  권오균 ,  김경옥

IPC: G02B6/12

CPC classification number: G02B6/12007

Abstract: 도파로 구조체가 제공된다. 이 도파로 구조체는 서로 이격되어 슬롯을 정의하는 제 1 및 제 2 패턴들을 구비하는 슬롯형 채널 도파로, 채널 도파로의 적어도 일부를 덮는 제 1 상부막 및 채널 도파로의 나머지를 덮는 제 2 상부막을 구비한다. 이때, 채널 도파로의 온도 계수와 제 2 상부막의 온도 계수의 곱은 음수이다.

公开(公告)号：KR1020090064951A

公开(公告)日：2009-06-22

申请号：KR1020070132339

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균 ,  박정우 ,  김경옥

IPC: H01L31/12

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: A semiconductor optoelectronic integrated circuit and a forming method thereof are provided to increase a degree of integration by arranging an optical active element on an optical grating of an optical waveguide. A semiconductor optoelectronic integrated circuit includes an optical waveguide(105), an optical grating(107), and an optical active element. The optical waveguide is arranged on a substrate. The optical waveguide includes an input terminal and an output terminal. The optical grating is formed on the optical waveguide. The optical active element is formed on the optical grating. The optical active element receives an optical signal from the optical waveguide through the optical grating. The optical active element modulates the received optical signal.

Abstract translation: 提供半导体光电集成电路及其形成方法，以通过将光学有源元件布置在光波导的光栅上来增加集成度。 半导体光电集成电路包括光波导（105），光栅（107）和光有源元件。 光波导布置在基板上。 光波导包括输入端子和输出端子。 光栅形成在光波导上。 光学有源元件形成在光栅上。 光学有源元件通过光栅从光波导接收光信号。 光学有源元件调制接收到的光信号。

公开(公告)号：KR1020090064929A

公开(公告)日：2009-06-22

申请号：KR1020070132314

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  서동우 ,  표정형 ,  김경옥

IPC: H01L21/20

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: A semiconductor device and a forming method thereof are provided to integrate various kinds of semiconductor devices on the same substrate by using a local SOI(Silicon On Insulator) structure. An ion implantation mask is formed on an upper surface of a substrate(110). A buried insulating layer(155) is locally formed within the substrate. An ion implantation layer is formed by performing an ion implantation process using the ion implantation mask. A buried insulating layer is locally formed within the substrate by performing a thermal process. An opening for exposing the buried insulating layer is formed by etching the substrate. A silicon pattern(145) separated from the substrate is formed in at least one direction on the buried insulating layer. A first insulating layer is formed to surround the silicon pattern.

Abstract translation: 提供半导体器件及其形成方法，以通过使用局部SOI（绝缘体上硅）结构将各种半导体器件集成在同一衬底上。 在基板（110）的上表面上形成离子注入掩模。 掩埋绝缘层（155）局部地形成在衬底内。 通过使用离子注入掩模进行离子注入工艺来形成离子注入层。 通过进行热处理，在衬底内局部形成掩埋绝缘层。 通过蚀刻基板形成用于曝光掩埋绝缘层的开口。 在掩埋绝缘层上的至少一个方向上形成与衬底分离的硅图案（145）。 形成第一绝缘层以包围硅图案。

公开(公告)号：KR1020090061873A

公开(公告)日：2009-06-17

申请号：KR1020070128857

申请日：2007-12-12

Applicant: 한국전자통신연구원

Inventor： 임영안 ,  김기수 ,  송정호 ,  권오균 ,  김경옥

IPC: H01S3/0941 ,  H01S3/10

CPC classification number: H01S5/026 ,  H01S5/0215 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/12 ,  H01S5/32333

Abstract: A hybrid laser diode for a single mode operation and a manufacturing method thereof are provided to generate a single mode laser by having a coupling coefficient reducing a diffraction grating formed in a bonding layer with the thin thickness. A hybrid laser diode includes a silicon layer(114), an active pattern, and a bonding layer(500). The active pattern is arranged on the silicon layer. The bonding layer is arranged between the silicon layer and the active pattern. The bonding layer includes diffraction patterns comprising a bragg grating. The diffraction patterns of the bonding layer are formed to define the openings to expose the silicon layer. The openings are arranged with an interval to satisfy a bragg condition corresponding to the wavelength of the light generated in the hybrid laser diode.

Abstract translation: 提供了用于单模操作的混合激光二极管及其制造方法，以通过具有减小形成在薄厚度的接合层中的衍射光栅的耦合系数来生成单模激光器。 混合激光二极管包括硅层（114），有源图案和结合层（500）。 有源图案布置在硅层上。 结合层布置在硅层和活性图案之间。 结合层包括包括布拉格光栅的衍射图案。 形成接合层的衍射图案以限定露出硅层的开口。 这些开口以间隔布置以满足与混合激光二极管中产生的光的波长相对应的布拉格条件。

公开(公告)号：KR1020070061043A

公开(公告)日：2007-06-13

申请号：KR1020060036356

申请日：2006-04-21

Applicant: 한국전자통신연구원

Inventor： 한원석 ,  권오균 ,  송현우 ,  박미란

IPC: H01S5/30

CPC classification number: H01S5/2009 ,  H01L21/761 ,  H01L29/0646 ,  H01L31/141 ,  H01S5/2077

Abstract: A semiconductor laser diode using change of an energy band structure is provided to raise an electric barrier through a critical value changing from type 1 to type 2. A semiconductor laser diode using change of an energy band structure includes an active layer, a cladding layer, a second compound semiconductor layer, and a third compound semiconductor layer. The active layer has a structure of a quantum well. The cladding layer is contacted to one side of the active layer, and is composed of a first compound semiconductor layer. The second compound semiconductor layer is contacted to the other end of the active layer, and forms an energy step for the active layer. The third compound semiconductor layer is inserted into the second semiconductor layer, and separates the second compound semiconductor layer to have a critical point having a non-conductive band energy step of "0" with the second compound semiconductor layer.

Abstract translation: 提供使用能带结构变化的半导体激光二极管，以通过从类型1改变为类型2的临界值来提高电势。使用能带结构的改变的半导体激光二极管包括有源层，包层， 第二化合物半导体层和第三化合物半导体层。 有源层具有量子阱的结构。 包覆层与有源层的一侧接触，由第一化合物半导体层构成。 第二化合物半导体层与活性层的另一端接触，形成有源层的能量步骤。 将第三化合物半导体层插入到第二半导体层中，并且使第二化合物半导体层与第二化合物半导体层分离为具有“0”的非导电带能级的临界点。

公开(公告)号：KR1020070061003A

公开(公告)日：2007-06-13

申请号：KR1020060027972

申请日：2006-03-28

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  박미란 ,  한원석 ,  송현우

IPC: H01L21/306 ,  H01S5/183

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: A method for etching a multi-layer of group III-V semiconductor materials and a method for manufacturing a vertical cavity surface emitting laser device are provided to obtain clearness and smoothness of an etched surface by etching the multi-layer with plasma of a mixed gas including Cl2, Ar, CH4, and H2. A first semiconductor layer(22) is formed with group III-V semiconductors. A second semiconductor layer(24) is formed with group III-V semiconductors that are different from the group III-V semiconductors of the first semiconductor layer. A method for etching a lamination structure including the first and second semiconductor layers includes a process for etching the lamination structure by exposing the lamination structure to plasma of a mixed gas including Cl2, Ar, CH4, and H2.

Abstract translation: 提供一种用于蚀刻III-V族III族半导体材料的多层的方法和用于制造垂直腔表面发射激光器件的方法，以通过用混合气体的等离子体蚀刻多层来获得蚀刻表面的清晰度和平滑度 包括Cl2，Ar，CH4和H2。 第III-V族半导体形成第一半导体层（22）。 第二半导体层（24）由与第一半导体层的III-V族半导体不同的III-V族半导体形成。 蚀刻包括第一和第二半导体层的叠层结构的方法包括通过将层压结构暴露于包括Cl 2，Ar，CH 4和H 2的混合气体的等离子体来蚀刻层压结构的方法。

公开(公告)号：KR100397371B1

公开(公告)日：2003-09-13

申请号：KR1020010069489

申请日：2001-11-08

Applicant: 한국전자통신연구원

Inventor： 신재헌 ,  권오균 ,  한원석 ,  주영구 ,  유병수

IPC: H01S5/183

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

Abstract: A long-wavelength VCSEL is provided. The laser includes a first conductive semiconductor substrate, lower mirror layers that are formed on the semiconductor substrate and are proper to the Bregg-reflection, an active layer formed on the lower mirror layer, a current passage layer that is formed on the active layer as a path through which an electric current flows into the active layer, current blocking layers that are formed on the active layer to encompass the current passage layer and limit the path through which an electric current flows into the active layer, an intra-cavity contact layer formed on a portion of the current passage layer and the current blocking layer, upper mirror layers that are formed on a portion of the intra-cavity contact layer and are proper to the Bragg-reflection, a first electrode formed on the exposed surface of the intra-cavity contact layer and the upper mirror layers, and a second electrode formed on a predetermined surface of the semiconductor substrate

Abstract translation: 提供长波长VCSEL。 该激光器包括第一导电半导体衬底，形成在半导体衬底上并且适合于Bregg反射的下镜层，形成在下镜像层上的有源层，形成在有源层上的电流通过层， 电流流入有源层的路径，形成在有源层上以包围电流通过层并限制电流流入有源层的路径的电流阻挡层，腔内接触层 形成在所述电流通过层和所述电流阻挡层的一部分上的第一电极，形成在所述腔内接触层的一部分上且适于布拉格反射的上镜层，形成在所述第一电极的暴露表面上的第一电极 腔内接触层和上镜层，以及形成在半导体衬底的预定表面上的第二电极

公开(公告)号：KR100395492B1

公开(公告)日：2003-08-25

申请号：KR1020000086751

申请日：2000-12-30

Applicant: 한국전자통신연구원

Inventor： 주영구 ,  유병수 ,  권오균

IPC: H01S5/18

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/005 ,  H01S5/0267 ,  H01S5/18

Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

Abstract translation: 一种用于产生激光束的折叠腔激光器，包括设有分布式布拉格反射器（DBR）的衬底; 在DBR上方形成的用于放大激光束的有源介质; 第一反射镜和第二反射镜，分别形成在所述有源介质的侧面上，用于形成水平腔并将放大的激光束反射到所述DBR; 以及在与DBR相对的基板上形成的微透镜，用于在经过放大后的激光束之后使其散光。

公开(公告)号：KR1020030062110A

公开(公告)日：2003-07-23

申请号：KR1020020002534

申请日：2002-01-16

Applicant: 한국전자통신연구원

Inventor： 유병수 ,  김종희 ,  한원석 ,  권오균 ,  주영구 ,  신재헌

IPC: H01S5/183

Abstract: PURPOSE: A multi-channel long wavelength VCSEL array and a fabricating method thereof are provided to form constantly an interval of a laser oscillation wavelength by controlling a resonant interval. CONSTITUTION: A multi-channel long wavelength VCSEL array includes a semiconductor substrate(10), a bottom mirror(20), an active region(30), a current limit layer(40), a superlattice control layer(50), and a top mirror(60). The bottom mirror is formed on the semiconductor substrate. The active region is formed on the bottom mirror. The current limit layer is formed on the active region in order to limit efficiently the current and enhance the efficiency of the heat transfer. The superlattice control layer is formed on the current limit layer in order to control an interval of laser oscillation wavelength. The top mirror is formed on the superlattice control layer.

Abstract translation: 目的：提供多通道长波长VCSEL阵列及其制造方法，以通过控制谐振间隔来恒定地形成激光振荡波长的间隔。 构成：多通道长波长VCSEL阵列包括半导体衬底（10），底镜（20），有源区（30），限流层（40），超晶格控制层（50）和 顶镜（60）。 底镜形成在半导体衬底上。 有源区形成在底镜上。 在有源区上形成电流限制层，以有效地限制电流并提高传热的效率。 为了控制激光振荡波长的间隔，在电流限制层上形成超晶格控制层。 上镜子形成在超晶格控制层上。