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    COLORIMETRIC GAS DETECTOR AND WINDOWED PROCESS CHAMBER
    41.
    发明申请
    COLORIMETRIC GAS DETECTOR AND WINDOWED PROCESS CHAMBER 审中-公开
    彩色气体检测器和窗户过程室

    公开(公告)号：WO2005019797A3

    公开(公告)日：2005-09-22

    申请号：PCT/US2004025339

    申请日：2004-08-05

    Applicant: ADVANCED TECH MATERIALS ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  TOM GLENN M ,  ARNO JOSE I ,  BAUM THOMAS H ,  ROEDER JEFFREY F ,  HILLS JAMES R

    Inventor： MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  TOM GLENN M ,  ARNO JOSE I ,  BAUM THOMAS H ,  ROEDER JEFFREY F ,  HILLS JAMES R

    IPC: G01N21/78 ,  G01N21/00 ,  B01L3/00 ,  B01L3/02 ,  B01L9/00 ,  B01L11/00 ,  G01N15/06 ,  G01N33/00 ,  G01N33/48

    CPC classification number: G01N21/783

    Abstract: A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.

    Abstract translation: 诸如洗涤器，沉积室，热反应器等半导体制造处理室的窗口化室，包括其中具有辐射透射窗口的端口。 内部设置在腔室内的是（i）窗口内表面上的一次性薄膜和/或（ii）以与窗口可视的关系设置的比色介质，使得可以通过窗口察觉比色变化，例如，视觉上 或通过光学感测装置，当比色介质暴露于目标气体种类时。 还公开了一种气体检测制品，其包括在暴露于其中时比色测定至少一种目标气体种类的存在的聚合物材料。

    APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS
    42.
    发明申请
    APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    在半导体处理系统中感测荧光物种的装置和方法

    公开(公告)号：WO2004036175B1

    公开(公告)日：2004-07-22

    申请号：PCT/US0332521

    申请日：2003-10-15

    Applicant: ADVANCED TECH MATERIALS

    Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

    IPC: G01N33/00 ,  G01N9/00

    CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

    Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

    Abstract translation: 一种气体检测器（54）和用于检测含有它的气体中的含氟物质的方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电 基于系统（MEMS）的器件结构和/或独立的金属元件（8），当需要高温感测时，其用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

    REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS
    43.
    发明申请
    REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS 审中-公开
    用超临界二氧化碳/化学配方去除图形化二氧化硅/二氧化硅颗粒污染

    公开(公告)号：WO2004042794A2

    公开(公告)日：2004-05-21

    申请号：PCT/US0334332

    申请日：2003-10-29

    Applicant: ADVANCED TECH MATERIALS

    Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

    IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  H01L

    CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

    Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

    Abstract translation: 一种清洁组合物，用于清洁半导体衬底上小尺寸的颗粒污染物。 清洁组合物含有超临界二氧化碳（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO 2作为清洁试剂的固有缺陷，即SCCO 2的非极性特性及其相关不能溶解存在于晶片衬底上的颗粒污染物中的物质例如无机盐和极性有机化合物， 必须从半导体衬底上去除以进行有效的清洁。 该清洁组合物能够在Si / SiO 2衬底上对具有微粒污染的衬底进行无损，无残留的清洁。

    TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME
    45.
    发明申请
    TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME 审中-公开
    用于监测TUNGSTEN十六进制处理以检测气相相位的TPIR装置，以及使用其的方法和系统

    公开(公告)号：WO2010138930A3

    公开(公告)日：2011-02-17

    申请号：PCT/US2010036747

    申请日：2010-05-28

    Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE I ,  DESPRES JOSEPH ,  LETAJ SHKELQIM ,  LURCOTT STEVEN M ,  BAUM THOMAS H ,  ZOU PENG

    Inventor： ARNO JOSE I ,  DESPRES JOSEPH ,  LETAJ SHKELQIM ,  LURCOTT STEVEN M ,  BAUM THOMAS H ,  ZOU PENG

    IPC: H01L21/66

    CPC classification number: C23C16/52 ,  C23C16/14 ,  C23C16/455 ,  G01N21/3504

    Abstract: Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

    Abstract translation: 用于监测气相沉积装置的装置和方法，其中气体混合物可以在支持这种行为的工艺条件下经历气相成核（GPN）和/或化学侵蚀产品装置。 该装置包括被布置成通过气体混合物的样本传送源辐射的辐射源，以及布置成接收由源辐射与气体混合物样品的相互作用产生的输出辐射的热电堆检测器组件，并且响应地产生指示 发生这种发生时气相成核和/或化学侵蚀的发生。 这种监测装置和方法在钨CVD处理中可用于实现无GPN或化学侵蚀的高速率钨膜生长。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    46.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 审中-公开
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：WO2007106788A3

    公开(公告)日：2007-12-13

    申请号：PCT/US2007063825

    申请日：2007-03-12

    Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  BAUM THOMAS H

    Inventor： XU CHONGYING ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  BAUM THOMAS H

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) 2 , wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    Abstract translation: 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2 N，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1， 其中各自独立地选自氢，C 1 -C 12 - / - C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 C 12 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2-C≡S > 12个烯基，R 1，R 2，R 3，R 3，R 3，R 3，R 3， R 1，R 2和R 3可以彼此相同或不同，并且各自独立地选自氢和C 1〜 并且包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数材料的均匀涂覆 男人 制造闪存等微电子器件。

    COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE
    48.
    发明申请
    COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE 审中-公开
    后处理光刻胶和/或底层抗反射材料无衬底去除的组成和方法

    公开(公告)号：WO2006036368A3

    公开(公告)日：2006-11-16

    申请号：PCT/US2005029510

    申请日：2005-08-19

    Applicant: ADVANCED TECH MATERIALS ,  MINSEK DAVID W ,  BERNHARD DAVID ,  BAUM THOMAS H

    Inventor： MINSEK DAVID W ,  BERNHARD DAVID ,  BAUM THOMAS H

    IPC: C11D7/50

    CPC classification number: C11D7/3209 ,  C11D11/0047 ,  C23C22/63 ,  C23G1/20

    Abstract: An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves high­efficiency removal of photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    Abstract translation: 一种用于从其上具有这种材料的基材去除光致抗蚀剂和/或底部抗反射涂层（BARC）材料的水基组合物和方法。 水基组合物包括季铵碱，至少一种共溶剂和任选的螯合剂。 该组合物在集成电路的制造中实现了光致抗蚀剂和/或BARC材料的高效去除，而对衬底（例如铜）上的金属物质没有不利影响，并且不损害在半导体结构中使用的基于SiOC的电介质材料。

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