公开(公告)号：WO2004036175A3

公开(公告)日：2004-06-17

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 气体检测器（54）和用于检测含有气体的气体中的含氟物质的方法，例如用HF，NF3等进行蚀刻清洗的半导体加工工具的流出物。优选结构布置中的检测器采用微机电 系统（MEMS）的装置结构和/或自立式金属元件（8），其在需要高温感测时用作感测部件并且可选地作为热源。 独立金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：WO2005072161A3

公开(公告)日：2005-12-29

申请号：PCT/US2005001409

申请日：2005-01-14

Applicant: ADVANCED TECH MATERIALS ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

Inventor： CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: G01N9/00 ,  G01N27/12 ,  G01N33/00

CPC classification number: G01N27/16

Abstract: A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.

Abstract translation: 一种用于检测目标气体种类的气体检测器和方法，例如含有其的气体中的含氟物质，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。一个方面的气体检测器 采用对含氟物质敏感的含镍丝，当需要高温检测时，它们既可以作为传感元件又可作为热源。 气体检测器在一个方面使用可以垂直安装在支撑结构上的细长的气体传感器元件。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应这种气体传感器元件的热膨胀/收缩的结构灵活性。

公开(公告)号：WO2007019342A2

公开(公告)日：2007-02-15

申请号：PCT/US2006030508

申请日：2006-08-07

Applicant: ADVANCED TECH MATERIALS ,  BOGGS KARL ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES

Inventor： BOGGS KARL ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES

IPC: B24B29/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

Abstract: A chemical mechanical polishing process including a single Step I CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

Abstract translation: 化学机械抛光方法，其包括用于平坦化微电子器件结构的单一步骤I CMP浆料制剂，其优选在其上沉积有铜。 该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除， 至少一种附加添加剂。 本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。

公开(公告)号：WO2006101897A2

公开(公告)日：2006-09-28

申请号：PCT/US2006009330

申请日：2006-03-15

Applicant: ADVANCED TECH MATERIALS ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: H01L21/302 ,  C23F1/00 ,  G01L21/30

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

公开(公告)号：WO2004036175B1

公开(公告)日：2004-07-22

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 一种气体检测器（54）和用于检测含有它的气体中的含氟物质的方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电 基于系统（MEMS）的器件结构和/或独立的金属元件（8），当需要高温感测时，其用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：WO2006133249A3

公开(公告)日：2009-04-16

申请号：PCT/US2006022037

申请日：2006-06-06

Applicant: ADVANCED TECH MATERIALS ,  DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES ,  GILES JEFFREY ,  STAWASZ MICHELE ,  BOGGS KARL

Inventor： DARSILLO MICHAEL ,  WRSCHKA PETER ,  WELCH JAMES ,  GILES JEFFREY ,  STAWASZ MICHELE ,  BOGGS KARL

IPC: B44C1/22 ,  C23F1/00 ,  C23F1/10 ,  H01L21/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L21/3212

Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.

Abstract translation: 化学机械抛光（CMP）组合物和用于从其上具有其的微电子器件衬底去除铜和阻挡层材料的单CMP压板工艺。 该方法包括将用于选择性地将铜去除和平面化的步骤I浆料制剂原位转化成用于在单个CMP压板垫上选择性除去阻挡层材料的步骤II浆料制剂。

公开(公告)号：WO2005081931A3

公开(公告)日：2006-02-02

申请号：PCT/US2005005607

申请日：2005-02-23

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  WELCH JAMES

Inventor： DIMEO FRANK JR ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  WELCH JAMES

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/16 ,  G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981

Abstract: A (MEMS)-based gas sensor assembly (35) for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide (4) support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds (16) that are subsequently removable for forming structure layers.

Abstract translation: 一种用于检测含有它的气体中的含氟物质的（MEMS）的气体传感器组件（35），例如用HF，NF3等进行蚀刻清洁的半导体处理工具的流出物。这种气体传感器组件 优选实施例包括具有涂覆在其上的气体感测材料层，优选镍或镍合金层的独立式碳化硅（4）支撑结构。 这种气体传感器组件优选地通过使用牺牲模具（16）的微型模制技术来制造，该模具随后可拆卸以形成结构层。

公开(公告)号：AU2003301333A8

公开(公告)日：2004-05-04

申请号：AU2003301333

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： STAWASZ MICHELE ,  CHEN SHIN ING ,  NEUNER JEFFREY W ,  KING MACKENZIE E ,  ROEDER JEFFREY F ,  WELCH JAMES ,  DIMEO FRANK ,  BAUM THOMAS H ,  CHEN PHILIP S H

IPC: G01N33/00 ,  G01N9/00

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：AU2003301333A1

公开(公告)日：2004-05-04

申请号：AU2003301333

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN SHIN ING ,  ROEDER JEFFREY F ,  DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE

IPC: G01N33/00

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：EP1861868A4

公开(公告)日：2010-11-24

申请号：EP06738395

申请日：2006-03-15

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: H01L21/302

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935