Process for the production of microstructure elements

    公开(公告)号:DE4326289A1

    公开(公告)日:1995-02-09

    申请号:DE4326289

    申请日:1993-08-05

    Applicant: BASF AG

    Abstract: The invention relates to a process for the production of microstructure elements having structure depths of from several mu m into the mm region by imagewise irradiation of polymers with X-rays and removal of the regions of the polymers which have been irradiated imagewise, where the polymers, before the imagewise irradiation, are firmly anchored to an electroconductive support in layer thicknesses of from several mu m into the mm region by polymerisation of the monomer(s) making up the polymer in the presence of a polymerisation catalyst, and, if desired, conditioning at temperatures between the glass transition temperature and the melting point of the polymer. The novel process is particularly suitable for the production of microstructure elements having structure depths of from 3 mu m to 2000 mu m and lateral dimensions of less than 10 mu m.

    44.
    发明专利
    未知

    公开(公告)号:DE4229244A1

    公开(公告)日:1994-03-03

    申请号:DE4229244

    申请日:1992-09-02

    Applicant: BASF AG

    Abstract: The invention relates to a process for making microstructures having structure depths ranging from several mu m up into the mm region by imagewise irradiation of polymers with X-rays and removal of the imagewise irradiated regions of the polymers. Before the imagewise irradiation, the polymers, which have layer thicknesses ranging from several mu m up into the mm region are applied under pressure to an electrically conductive base and firmly anchored by melting in a frame and using a pressure ram. The process according to the invention is suitable, in particular, for making microstructures having structure depths of between 3 mu m and 2000 mu m and very fine lateral dimensions of less than 10 mu m.

    45.
    发明专利
    未知

    公开(公告)号:DE4223886A1

    公开(公告)日:1994-01-27

    申请号:DE4223886

    申请日:1992-07-21

    Applicant: BASF AG

    Abstract: The invention relates to a process for making microstructures having structure depths ranging from several mu m up to the mm range by imagewise irradiation of polymers which have been applied to electrically conductive substrates using an adhesive layer, with synchrotron radiation and removal of the imagewise irradiated regions. The adhesive layer is composed of at least two different chemical elements which are applied by simultaneous vapour deposition or cathode sputtering onto the conductive substrate and are selectively or partly removed before the application of the polymer. The process is suitable for making metal or plastic microstructures.

    50.
    发明专利
    未知

    公开(公告)号:DE3678127D1

    公开(公告)日:1991-04-18

    申请号:DE3678127

    申请日:1986-12-19

    Applicant: BASF AG

    Abstract: Relief plates crosslinked by photopolymerization are produced by exposing layers which are crosslinkable by photopolymerization imagewise to actinic light and washing out the noncrosslinked parts of the layers with a developer, by a process in which the developer used contains, as an essential component, a branched or straight-chain, monoolefinically, diolefinically or triolefinically unsaturated acryclic or saturated or monoolefinically, diolefinically or triolefinically unsaturated cyclic aliphatic hydrocarbon, alcohol or ketone of 8 to 15 carbon atoms.

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