公开(公告)号：DE10249650A1

公开(公告)日：2004-05-13

申请号：DE10249650

申请日：2002-10-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POPP MARTIN ,  ENDERS GERHARD ,  VOIGT PETER

IPC: H01L21/265 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

Abstract: The method involves applying gate stacks adjacent to each other to a gate dielectric with a semiconducting substrate of first conductor type with constant sum of common stack width and separation of, determining angle for inclined implantation of first conductor type doping with self-adjustment to gate stack edges, whereby a dose variation compensates for a FET starting voltage variation caused by width variation about desired width. The method involves applying gate stacks adjacent to each other to a gate dielectric (5) with a semiconducting substrate (1) of a first conductor type (p) with a constant sum of a common width (b) and separation (c) of the gate stacks, determining an angle (alpha) for inclined implantation (I) of doping of the first conductor type with self-adjustment to the edges of the gate stacks, whereby a dose variation compensates for a FET starting voltage variation caused by a width variation about a desired width.

公开(公告)号：DE10217261A1

公开(公告)日：2003-08-07

申请号：DE10217261

申请日：2002-04-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  GUTSCHE MARTIN ,  POPP MARTIN ,  SEIDL HARALD

IPC: H01L21/8242 ,  H01L27/108

公开(公告)号：DE10131237A1

公开(公告)日：2003-01-23

申请号：DE10131237

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  RICHTER FRANK ,  POPP MARTIN ,  WICH-GLASEN ANDREAS

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/06

Abstract: The invention relates to a transistor that advantageously uses a portion of the surface, which is provided in conventional transistors for insulating the transistors. This enables the enlargement of the channel width to self-adjust without the risk of short-circuits. The inventive field effect transistor is advantageous in that a distinct increase in the channel width that is active for the forward current ION can, compared to conventional transistor structures used up to now, be guaranteed without having to accept a decrease in the attainable integration density. This permits, for example, the forward current ION to increase by 50 % without having to modify the arrangement of the active regions or of the trench insulation.

公开(公告)号：DE10131276A1

公开(公告)日：2003-01-16

申请号：DE10131276

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  RICHTER FRANK ,  POPP MARTIN ,  WICH-GLASEN ANDREAS

IPC: H01L29/423 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow ION can be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.