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    Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers
    42.
    发明专利
    Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers 未知

    公开(公告)号：DE10227850A1

    公开(公告)日：2004-01-15

    申请号：DE10227850

    申请日：2002-06-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LUYKEN JOHANNES R ,  SEITZ MARKUS ,  PREECE JON ,  WEBER WERNER ,  SCHMID GUENTER

    IPC: C07D213/22 ,  G11C13/02 ,  H01L27/28 ,  H01L51/30 ,  H01L51/20 ,  H01L51/40 ,  H01L51/00 ,  G11C11/21 ,  C07D213/00

    Abstract: A circuit element comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between the first and second conductive layers, whereby the bis-pyridinium molecules of the monomolecular layer are immobilized on the electrically conductive layer as at least one discrete region. A circuit element (I) comprises a first layer of an electrically insulating substrate material with a first electrically conductive material comprising at least one discrete region that is embedded into or applied onto the substrate; a second layer with a second electrically conductive material and a monomolecular layer of redox-active bis-pyridinium molecules situated between the first and second layers, whereby the bis-pyridinium molecules of the monomolecular layer are immobilized on the electrically conductive layer as at least one discrete region and are in electrical contact with the second electrical material of the second layer and electrically inert molecules are immobilized on the first layer to form a matrix that surrounds at least one discrete region of the monomolecular layer of bispyridinium molecules. Independent claims are included for: (1) a process for the production of a circuit element (I) by application and/or embedding of a first electrically conductive material to at least one discrete position on/in the substrate material; immobilization of a monomolecular layer of redox-active bispyridinium molecules onto at least one discrete region of the first electrically conductive material; immobilization of electrically inert molecules onto the first layer of electrically insulating material that surround at least one region with the monomolecular layer of bis-pyridinium molecules; application of a second layer with a second electrically conductive material onto the layer of the electrically inert molecules and the bis-pyridinium molecules, whereby the bispyridinium molecules of the monomolecular layer are in contact with the second electrically material of the second layer; (2) bispyridinium compounds of formula (1) with the exclusion of N,N'-dimethyl-4,6,9,10-tetrahydro-2,7-diazapyreniumdiiodide; 1,1',2,2'-tetramethyl-4,4'-bispyridinium; 1,1',2-trimethyl-4,4'-bispyridinium; N,N'-dimethyl-2,7-diazapyrenium; N-methyl-N'-(p-toloyl)-2,7-diazapyrenium, 1,1'-dimethyl-2-phenyl-6-(p-toloyl)-4,4'-bispyridium diperchlorate; 1,1'-dimethyl-2-phenyl-4,4'-bispyridium diperchlorate; 6-(phenyl)-1,1',2-trimethyl-4,4'-bispyridium diperchlorate; 6-(phenyl)-1,1',2-trimethyl-4,4'-bispyridium diperchlorate or 1,1'-dimethyl-2-phenyl-6-(2,5-dichloro-3-thienyl)-4,4'-bispyridiumdiperchlorate. (1) Xa, XbS, N or O; Ra, Rbalkyl, aryl, alkylaryl, alkenyl, halogen, CN, OCN, COOH, COOR1>, CONHR1>, NO2, OH, OR1>, NH2, NHR1>, NR'R, SH or SR1>; R'R : alkyl, aryl, alkylaryl, alkenyl or alkinyl or Ra and Rb together form a bridge between the two aromatic ring systems comprising 1-3 atoms of C, S, N or O bonded by single, double or triple bonds and optionally substituted by Re; RcR a and Rb; Y : CH2, O, S, NH, NR1>, COO, CONH, CHCH, CC or aryl; Aa, ZbCH3, -CHCH2, SH, -SS-, SiCl3, Si(OR)3, SiR(OR')(OR), SiR(OR')2, Si(R'R)NH2, Si(R'2)NH2, COOH, SO3, PO3H or NH2; n, q : 0-12; j, k : 0-6; p., m : 0-12.

    43.
    发明专利
    未知

    公开(公告)号：DE59610179D1

    公开(公告)日：2003-04-03

    申请号：DE59610179

    申请日：1996-11-06

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LAUTERBACH CHRISTL ,  WEBER WERNER

    IPC: H01L21/58 ,  H01L21/768 ,  H01L21/98 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065 ,  H01L27/00

    Abstract: PCT No. PCT/DE96/02108 Sec. 371 Date May 19, 1998 Sec. 102(e) Date May 19, 1998 PCT Filed Nov. 6, 1996 PCT Pub. No. WO97/19462 PCT Pub. Date May 29, 1997A vertically integrated semiconductor component is provided with component levels disposed on different substrates. The substrates are joined by a connecting layer of benzocyclobutene and an electrical connection is provided between component levels by a vertical contact structure. A low-stress gluing is provided by the benzocyclobutene connecting layer.

    44.
    发明专利
    未知

    公开(公告)号：DE59903868D1

    公开(公告)日：2003-01-30

    申请号：DE59903868

    申请日：1999-09-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WEBER WERNER ,  THEWES ROLAND ,  PLASA GUNTHER

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/08 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

    Abstract: The magnetoresistive memory provides for an improvement in interference immunity even though only a small chip area is used. Word lines are situated vertically between two complementary bit lines, a magnetoresistive memory system of a regular location is situated between a bit line and a word line, and an appertaining magnetoresistive layer system of a complementary memory location is situated between the complementary bit line and the word line in the vertical direction.

    MEMS-Bauelemente und Verfahren zur Herstellung derselben
    49.
    发明专利
    MEMS-Bauelemente und Verfahren zur Herstellung derselben 未知

    公开(公告)号：DE102008062499B4

    公开(公告)日：2013-05-16

    申请号：DE102008062499

    申请日：2008-12-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： RABERG WOLFGANG ,  SCHOEN FLORIAN ,  WEBER WERNER ,  WINKLER BERNHARD

    IPC: B81B7/02 ,  B81C1/00

    Abstract: Verfahren zum Herstellen eines Mikroelektromechanisches-System-Bauelements (MEMS-Bauelements), wobei das Verfahren folgende Schritte umfasst: Bereitstellen eines Arbeitsstücks (102; 202), wobei das Arbeitsstück ein Substrat (104), eine auf dem Substrat (104) angeordnete vergrabene Oxidschicht (106, 206, 306, 406) und ein auf der vergrabenen Oxidschicht (106, 206, 306, 406) angeordnetes erstes halbleitendes Material (108, 208, 308, 408) aufweist, wobei das erste halbleitende Material (108, 208, 308, 408) eine obere Oberfläche aufweist; Bilden zumindest eines Grabens (110, 210, 310, 410) in dem ersten halbleitenden Material (108, 208, 308, 408), wobei eine obere Oberfläche der vergrabenen Oxidschicht (106, 206, 306, 406) an dem Boden des zumindest einen Grabens (110, 210, 310, 410) freigelegt wird, wobei der zumindest eine Graben (110, 210, 310, 410) eine erste Seitenwand und eine der ersten Seitenwand gegenüberliegende zweite Seitenwand aufweist; Bilden einer Isoliermaterialschicht (240; 115; 215; 315; 415; 515) auf der oberen Oberfläche des ersten halbleitenden Materials...

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