公开(公告)号：MY146073A

公开(公告)日：2012-06-29

申请号：MYPI20052713

申请日：2005-06-15

Applicant: LAM RES CORP

Inventor： DORDI YEZDI N ,  REDEKER FRED C ,  BOYD JOHN M ,  MARASCHIN ROBERT ,  WOODS CARL

IPC: C25D5/06

Abstract: AN ELECTROPLATING APPARATUS FOR ELECTROPLATING A SURFACE OF A WAFER IS PROVIDED. THE WAFER (W) IS CAPABLE OF BEING ELECTRICALLY CHARGED AS A CATHODE. THE ELECTROPLATING APPARATUS INCLUDES A PLATING HEAD (110) CAPABLE OF BEING POSITIONED EITHER OVER OR UNDER THE SURFACE OF A WAFER AND CAPABLE OF BEING ELECTRICALLY CHARGED AS IN ANODE. THE PLATING HEAD IS CAPABLE OF ENABLING METALLIC PLATING BETWEEN THE SURFACE OF THE WAFER AND THE PLATING HEAD WHEN THE WAFER AND PLATING HEAD ARE CHARGED. THE PLATING HEAD FURTHER COMPRISES A VOLTAGE SENSOR PAIR (126, 128) CAPABLE OF SENSING A VOLTAGE PRESENT BETWEEN THE PLATING HEAD AND THE SURFACE OF THE WAFER, AND A CONTROLLER CAPABLE OF RECEIVING DATA FROM THE VOLTAGE SENSOR PAIR. THE DATA RECEIVED FROM THE VOLTAGE SENSOR PAIR IS USED BY THE CONTROLLER TO MAINTAIN A SUBSTANTIALLY CONSTANT VOLTAGE TO BE APPLIED BY THE ANODE WHEN THE PLATING HEAD IS PLACED IN POSITIONS OVER THE SURFACE OF THE WAFER. A METHOD OF ELECTROPLATING A WAFER IS ALSO PROVIDED.

公开(公告)号：SG177215A1

公开(公告)日：2012-01-30

申请号：SG2011092590

申请日：2007-12-05

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  BOYD JOHN M ,  REDEKER FRITZ C ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  YOON HYUNGSUK ALEXANDER

Abstract: An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.Figure 1

公开(公告)号：SG166109A1

公开(公告)日：2010-11-29

申请号：SG2010071355

申请日：2006-06-15

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non- Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer. Fig. 3B