公开(公告)号：WO2007146803B1

公开(公告)日：2008-12-18

申请号：PCT/US2007070758

申请日：2007-06-08

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  DHINDSA RAJINDER

Inventor： FISCHER ANDREAS ,  DHINDSA RAJINDER

IPC: C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

Abstract: Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

Abstract translation: 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

公开(公告)号：WO2007100528A3

公开(公告)日：2008-10-23

申请号：PCT/US2007004224

申请日：2007-02-16

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

Abstract: Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

Abstract translation: 概括地说，本发明通过提供改进的室清洁机构来满足这些需要。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

公开(公告)号：WO2008002938A3

公开(公告)日：2008-05-08

申请号：PCT/US2007072158

申请日：2007-06-26

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  PIRKLE DAVID

Inventor： FISCHER ANDREAS ,  PIRKLE DAVID

IPC: G01R23/00 ,  H05B7/16

CPC classification number: H01L21/67069 ,  H01J37/304 ,  H01J37/32935 ,  H01L21/67253

Abstract: Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

Abstract translation: 配置成检测等离子体处理室中的等离子体无约束条件的通用等离子体无约束检测系统及其方法。 检测系统和方法被设计成可以以独立于过程和独立于方法的方式可靠而准确地检测等离子体无约束条件的存在。

公开(公告)号：WO2007146803A2

公开(公告)日：2007-12-21

申请号：PCT/US2007070758

申请日：2007-06-08

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  DHINDSA RAJINDER

Inventor： FISCHER ANDREAS ,  DHINDSA RAJINDER

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

Abstract: Techniques and apparatus for substantially reducing and/or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

Abstract translation: 用于显着减少和/或防止发生等离子体非约束事件的技术和装置，包括屏蔽设置在室部件之间的间隙和沿着具有电介质屏蔽结构的RF电流路径的一个或多个的屏蔽尖锐部件结构 电介质屏蔽结构，并保持相邻的等离子体约束环之间的间隙小于等离子体的最坏情况DeBye长度。

公开(公告)号：WO2005059960A3

公开(公告)日：2007-11-08

申请号：PCT/US2004041433

申请日：2004-12-10

Applicant: LAM RES CORP ,  FISCHER ANDREAS

Inventor： FISCHER ANDREAS

IPC: C23F1/00 ,  H01J37/32 ,  H01L20060101 ,  H01L21/302 ,  H04B1/28

CPC classification number: H01J37/32082 ,  H01J37/32532

Abstract: A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.

Abstract translation: 用于等离子体处理的分段射频（RF）供电电极。 电极包括第一电极，围绕第一电极的第二电极和介于第一电极和第二电极之间的电介质材料。 电介质材料将第一电极与第二电极电隔离。 至少一个双频射频功率源以第一频率和第二频率输出RF功率。 第一频率和第二频率是不同的，使得至少一个射频开关至少将第一频率或第二频率从至少一个双频源引导到第一电极，第二电极或第一电极，以及 第二电极。

公开(公告)号：WO0229849A3

公开(公告)日：2002-06-13

申请号：PCT/US0142536

申请日：2001-10-05

Applicant: LAM RES CORP ,  KUTHI ANDRAS ,  FISCHER ANDREAS

Inventor： KUTHI ANDRAS ,  FISCHER ANDREAS

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32082

Abstract: The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer. The match network is coupled between the modulated RF power generator and the plasma processing chamber to receive and transmit the modulated RF power from the modulated RF power generator to the plasma processing chamber. The match network is further configured to match an impedance of the modulated RF power generator to the internal impedance of the plasma processing chamber.

Abstract translation: 本发明提供了用于在等离子体处理室中使用单频RF功率处理晶片的系统，设备和方法。 等离子体处理系统包括调制RF功率发生器，等离子体处理室和匹配网络。 调制的RF功率发生器被设置为产生调制的RF功率。 等离子体处理室布置成接收用于处理晶片的调制RF功率，并且在等离子体处理期间由内部阻抗表征。 等离子体处理室包括用于将晶片保持就位的静电吸盘，静电吸盘包括设置在晶片下方的第一电极，用于接收调制的RF功率。 等离子体处理室还包括设置在晶片上的第二电极。 调制的RF功率产生用于处理晶片的等离子体和离子轰击能量。 匹配网络耦合在调制的RF功率发生器和等离子体处理室之间，以接收调制的RF功率，并将调制的RF功率从调制的RF功率发生器传送到等离子体处理室。 匹配网络被进一步配置成将调制的RF功率发生器的阻抗匹配到等离子体处理室的内部阻抗。

公开(公告)号：SG11201907625UA

公开(公告)日：2019-09-27

申请号：SG11201907625U

申请日：2018-02-26

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  LILL THORSTEN ,  JANEK RICHARD

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: OO\ O N O N O (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 30 August 2018 (30.08.2018) WIP0 I PCT onion °nolo loomoiloimoliflom (10) International Publication Number WO 2018/157090 Al (51) International Patent Classification: H01L 21/3065 (2006.01) H01L 21/3213 (2006.01) H01L 21/311 (2006.01) (21) International Application Number: PCT/US2018/019784 (22) International Filing Date: 26 February 2018 (26.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,360 27 February 2017 (27.02.2017) US 15/615,691 06 June 2017 (06.06.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: FISCHER, Andreas; 4650 Cushing Parkway, Fremont, CA 94538 (US). LILL, Thorsten; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). JANEK, Richard; 4650 Cushing Parkway, Fremont, CA 94538 (US). (74) Agent: LEE, David, F.; Martine Penilla Group, Llp, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, (54) Title: CONTROL OF DIRECTIONALITY IN ATOMIC LAYER ETCHING A1 2 0 3 ATOP OF 100nm TEOS FLUORINATION 0-BIAS PLASMA LIGAND EXCHANGE Sn(acac) 2 VAPOR PUMP-OUT PLASMA TREATMENT CHAMBER VAPOR TREATMENT CHAMBER FIG. 3 (57) : A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer is effected via a ligand exchange reaction that is configured to volatilize the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation. [Continued on next page] WO 2018/157090 Al I IIIII IIIIIIII II 111111 VIII IIIII VIII IIIII 31100111HOMOVOIS MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

公开(公告)号：SG10201705046SA

公开(公告)日：2017-07-28

申请号：SG10201705046S

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

公开(公告)号：SG10201404083WA

公开(公告)日：2015-02-27

申请号：SG10201404083W

申请日：2014-07-15

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HOLLAND JOHN

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

公开(公告)号：SG10201405522RA

公开(公告)日：2014-10-30

申请号：SG10201405522R

申请日：2007-02-16

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.