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    44.
    发明专利
    未知

    公开(公告)号：DE69903200T2

    公开(公告)日：2003-06-12

    申请号：DE69903200

    申请日：1999-01-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34

    Abstract: A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a1 and a2, respectively. The first material is selected such that a1 > ao, where ao is the lattice constant of the substrate (typically InP), and the second material is selected such that a 2 ao. The materials are also selected such that the conduction band discontinuity DELTA Ec between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 mu m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

    46.
    发明专利
    未知

    公开(公告)号：DE69703595D1

    公开(公告)日：2001-01-04

    申请号：DE69703595

    申请日：1997-03-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： SIRTORI CARLO ,  SIVCO DEBORAH LEE ,  CAPASSO FEDERICO ,  FAIST JEROME ,  CHO ALFRED YI ,  HUTCHINSON ALBERT LEE

    IPC: H01S5/00 ,  H01S5/34

    Abstract: The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260K, preferably above 300K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction (3) in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well (15). Among the features typically is also a chirped superlattice in the injection/relaxation region (12) that acts as a Bragg reflector to suppress escape of carriers from the lasing level into the continuum, while facilitating carrier extraction from the ground (2) state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region. An InP top cladding layer is also used to optimize heat dissipation.

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