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    PHOTOMASK MANUFACTURING DEVICE
    44.
    发明专利
    PHOTOMASK MANUFACTURING DEVICE 失效

    公开(公告)号：JPH04191739A

    公开(公告)日：1992-07-10

    申请号：JP32464990

    申请日：1990-11-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： WATANABE HISASHI ,  TAKAYAMA YUICHIRO ,  TODOKORO YOSHIHIRO ,  INOUE MORIO

    IPC: G03F1/30 ,  G03F1/68 ,  H01L21/027

    Abstract: PURPOSE:To enhance reliability of generated data by judging whether mask data are wiring data or window data, judging whether the number of near-by parallel wirings is an even number or an odd number when the mask data are wiring data, and generating required data respectively. CONSTITUTION:Mask data 1 corresponding to a desired figure, and resolving limit data 2 of a stepper are stored in a storage device, and a preparing means 3 prepares striped pattern data to store them in the storage device. Then, a extracting means 4 reads out data 1 of one layer, a judging means 5 judges whether the data 1 are wiring data or not, a converting means 6 judges whether the number (m) of near-by parallel wirings is an even number or an odd number when the above data are wiring data, and prepares 1/2m pieces of transparent type phase shift mask wiring data when the number of near-by parallel wirings is an even number. When the number of near-by parallel wirings is an odd number, 1/2(m - 1) pieces of the above data are prepared, and one piece of wiring data is added. On the other hand, when the means 5 judges that the mask data are window data, a converting means 7 performs OR graphic logical operation on the striped pattern data and the window data, and generates transparent type phase shift mask window data.

    X-RAY MASK AND ITS MANUFACTURE
    45.
    发明专利
    X-RAY MASK AND ITS MANUFACTURE 失效

    公开(公告)号：JPH02302020A

    公开(公告)日：1990-12-14

    申请号：JP12139289

    申请日：1989-05-17

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO

    IPC: G03F1/22 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE:To easily evaluate sensitivity of a resist by a method wherein, after a plurality of resist regions whose thickness is different have been formed on an X-ray absorber, the resist regions and one part of the X-ray absorber directly under the resists are dry-etched. CONSTITUTION:A plurality of X-ray absorbers 2 whose thickness is different are formed on the surface of an X-ray transmitter 1; it is constituted that this transmitter is held on a mask support body 3. When an X-ray mask is arranged on the surface of a water coated with a resist and an X-ray exposure operation and a developing operation are executed, the resist is formed in such a way that its film thickness is different by a difference in film thickness of the individual X-ray absorbers 2. Consequently, a measured result of the film thickness is drawn as a sensitivity curve; alternatively, different kinds of chips between element patterns are exposed by making use of the X-ray mask as a reticle by using an X-ray stepper; thereby, this assembly can be used as a development monitor when the element patterns are developed.

    FORMATION OF CONDUCTIVE ORGANIC FILM
    48.
    发明专利
    FORMATION OF CONDUCTIVE ORGANIC FILM 失效

    公开(公告)号：JPS6437015A

    公开(公告)日：1989-02-07

    申请号：JP19296687

    申请日：1987-07-31

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

    IPC: H01L21/027 ,  H01L21/30 ,  H01L21/3205 ,  H01L23/52

    Abstract: PURPOSE:To enable a very thin conductive film to be formed while avoiding any metallic pollution by a method wherein a substrate is spin-coated with a water or methylalcohol solution of polystyrene sulfonic acid ammonium and then heat treated. CONSTITUTION:A specified substrate is spin-coated with a thinly melted down polystyrene sulfonic acid ammonium water solution. At this time, it is recommended that the weight ratio of plystyrene sulfonic acid ammonium is specified within the range of 5-30%. Next, the substrate is heat treated at the temperature, e.g., not exceeding 250 deg.C. Through these procedures, a conductive organic film containing metallic impurity not exceeding 1ppm and in no danger of metallic pollution can be formed in extremely thin thickness of 0.1-2mum.

    FORMING METHOD FOR X-RAY MASK
    49.
    发明专利
    FORMING METHOD FOR X-RAY MASK 失效

    公开(公告)号：JPS63278329A

    公开(公告)日：1988-11-16

    申请号：JP11418187

    申请日：1987-05-11

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TAKASU YASUHIRO ,  TAKENAKA HIROSHI ,  TODOKORO YOSHIHIRO

    IPC: G03F1/00 ,  G03F1/22 ,  G03F1/68 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE:To enable forming a protective film without distortion, of a substrate, a transmissive film, and an absorber pattern and to use the changing of a sub strate temperature so as to make stress controllable, by using a mixed gas of nitrogen and diborane to form a boron nitride film on a quartz substrate at substrate temperature of 300 deg.C or more by the use of a plasma CVD method. CONSTITUTION:A BN film 2 is piled on a quartz substrate 1 by the use of a plasma CVD method. The piling of the BN film by the plasma CVD is performed by using a gaseous-nitrogen-based mixture containing 5% diborane. A sputtering method is used to pile a tungsten W film on this BN film 2, and next dry etching is used to perform the patterning of the tungsten film so that a pattern 3 is obtained. A BN film 4 serving as a protective film for the tung sten pattern 3 is piled on the pattern 3 by the use of a plasma CVD method, and next the patterning of a negative photoresist 5 for use of a wet etching mask is performed on a rear of the substrate 1. Accordingly the BN film of 5X10 dyne/cm or less in its tensor stress can be formed and it can be used as an X-ray transmissive film.

    FORMATION OF RESIST PATTERN
    50.
    发明专利
    FORMATION OF RESIST PATTERN 失效

    公开(公告)号：JPS63204724A

    公开(公告)日：1988-08-24

    申请号：JP3849887

    申请日：1987-02-20

    Applicant: MATSUSHITA ELECTRONICS CORP ,  TOSOH CORP

    Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO ,  HASEGAWA MASAZUMI ,  FUKUDA SANJU

    IPC: G03F7/26 ,  G03C1/00 ,  G03C5/00 ,  G03F7/00 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE:To prevent a lower layer resist from charging by simple processing by a method wherein one layer of multilayer-structured resist film formed on a substrate is formed into a high polymer film comprising a salt of an anion radical of polystyrene sulfonic acid and a positive charged radical to electron beam exposure process this multilayer-structured resist film. CONSTITUTION:One layer of multilayered structured resist film formed on a substrate 1 is formed into a high polymer thin film 2 comprising a salt of an anion radical of polystyrene sulfonic acid and a positive charged radical to form a resist pattern by means of electron beam exposure processing the multilayered structured resist film. Polystyrene sulfonic acid ammonium, being conductive and water soluble, is subjected to easy control before it is coated as well as easy coating process while filling the role of a no charged film. Through these procedures, a lower layer resist can be prevented from charging without using an Si thin film at all.

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