公开(公告)号：JP2000277802A

公开(公告)日：2000-10-06

申请号：JP7912299

申请日：1999-03-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKAMURA SHINJI ,  YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO ,  ORITA KENJI

IPC: H01L21/28 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To lower resistivity in p- and n-type ohmic electrodes of a semiconductor device composed of a III-V nitride compound semiconductor. SOLUTION: On a sapphire substrate 1, an undoped GaN buffer layer 2, an undoped GaN layer 3, a p-type doped GaN 4a doped with Mg, which is a p-type impurity, are sequentially grown in crystallized states (a). Then a p-type electrode 9 is formed by sequentially vapor-depositing alloy film 8 made of Ni and Mg and an Au film 6 on the p-type doped GaN film 4a (b). Thereafter, the p-type doped GaN layer 4a is changed into a low-resistance GaN layer 4 by activating Mg contained in the layer 4a by expelling hydrogen from the layer 4a by subjecting it to temperature raising and lowering of the temperature of the substrate 1 between 70 deg.C and room temperature three times.

公开(公告)号：JP2000012950A

公开(公告)日：2000-01-14

申请号：JP4760999

申请日：1999-02-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KAWACHI YASUYUKI ,  NAKANISHI HIDEYUKI ,  YURI MASAAKI ,  YOSHIKAWA AKIO ,  ISHIGURO NAGATAKA

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/026 ,  H01S5/042 ,  H01S5/068 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which has a surge voltage resisting function and good responsiveness to high-frequency superposition and pulse modulation. SOLUTION: A semiconductor laser device is constituted in such a way that a semiconductor laser chip 1, having an anode and a cathode and a field effect transistor 4 are connected in parallel with each other, and the anode of the chip 1 is connected to the drain of the transistor 4. In addition, the gate of the transistor 4 is connected to the drain of the transistor 4, and the cathode of the chip 1 is connected to the source of the transistor 4.

公开(公告)号：JPH11340147A

公开(公告)日：1999-12-10

申请号：JP14267598

申请日：1998-05-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HASHIMOTO TADAAKI ,  YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO

IPC: H01L21/203 ,  H01L21/205 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To obtain the optimum nitriding condition by a simple method by specifying the nitriding time at a specific temperature in a nitriding process and, in addition, the ruggedness of AlN crystalline nuclei formed on the surface of a sapphire substrate. SOLUTION: A buffer layer 2 is deposited on a nitriding sapphire substrate 4 and a GaN crystalline layer 3 is grown on the layer 2. The nitriding time (t) (sec) of the substrate 4 is set at 4.7×10 × exp (1.5×10 /T) when the nitriding temperature is T (k). In addition, the nitriding time (t) is set so that the ruggedness of AlN crystalline nuclei formed on the surface of the substrate 4 may not exceed 10 nm. Consequently, a crystalline layer 3 having high crystallinity can be obtained easily. When the temperature T is 1,000 deg.C, the nitriding time (t) is calculated to be about 62 seconds from the relation. Therefore, the productivity of a nitride semiconductor wafer 11 and, in addition, the crystallinity of a nitride semiconductor can be improved.

公开(公告)号：JPH1154438A

公开(公告)日：1999-02-26

申请号：JP20567397

申请日：1997-07-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YURI MASAAKI ,  UEDA TETSUZO ,  BABA TAKAAKI

IPC: H01L29/20 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To form a cubic-system nitride semiconductor layer of good crystallinity on a substrate, by nitriding one surface of a cubic-system semiconductor layer comprising aluminum, and forming a cubic-system nitride semiconductor layer on the surface. SOLUTION: By heating a substrate 1, in a molecular beam epitaxy device, and a irradiation with As molecular beam, an oxide present on the surface of the substrate 1 is removed. Then, by supplying Ga and Al, a semiconductor layer 2 of AlGaAs is formed. Then, irradiation with dimethylhydrazine is started to begin surface-nitriding of the semiconductor layer 2, and RED pattern representing a crystal state on the surface of a semiconductor layer 2 is monitored with a reflective high-speed electron diffraction device (RHEED), and when the RED pattern representing presence of AlGaAs changes to that representing presence of AlGaN, Ga is supplied in addition to the dimethylhydrazine, for growth of a cubic-system nitride semiconductor layer 3 constituted of GaN.

公开(公告)号：JPH10209051A

公开(公告)日：1998-08-07

申请号：JP1098597

申请日：1997-01-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KONDO OSAMU ,  HASHIMOTO TADAAKI ,  ISHIDA MASAHIRO ,  YURI MASAAKI

IPC: H01L21/205 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a stably carrier concn.- controlled nitride compd. semiconductor which raises the raw material efficiency by accelerating the decomposition of NH3 at forming films by a metal oxide CVD method, suppresses the Mg-H bond formation, and eliminates the need of treatments such as electron beam irradiation and annealing. SOLUTION: A III and V group materials and doping material are introduced to grow a nitride compd. semiconductor on a substrate such that ammonia of the V group material and org. metal compd. shown by R-Mg-Cl (R is org. substituent) of the doping material are fed from the same feed line 10 onto the substrate 2, and a IIIb element-contg. org. metal compd. of the III group material and compd. R-Mg-Cl are fed from a separate feed line 9 onto the substrate.

公开(公告)号：JPH05243611A

公开(公告)日：1993-09-21

申请号：JP4534992

申请日：1992-03-03

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NOMA JUNJI ,  YURI MASAAKI ,  OTA KAZUNARI

IPC: H01L33/30 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To obtain a GaAlAs high luminance light-emitting diode which emits light with a wavelength of 620 to 630nm by making the wavelength of the emitted light into short wavelength without increasing Al mixed crystal ratio of an active layer with the use of the quantum size effect due to reduction of the thickness of the active layer which serves as a light-emitting region. CONSTITUTION:On a substrate 1 of Ga1-xAlxAs (x=0.4-0.65), a Ga0.2Al0.8As clad layer 2, a Ga0.65Al0.35As, a clad layer 3 having 4nm thickness, a Ga0.2Al0.8As clad layer 4, and a Ga0.35Al0.65As contact layer 5 are grown successively. Then, ohmic electrodes 6 and 7 are formed. This constitution enables the wavelength to turn into short wavelength without increasing Al mixed crystal ratio of the active layer 3 due to the quantum size effect of the active layer 3 which serves as a light-emitting region. Therefore, a GaAlAs high luminance light- emitting diode which emits light of 620 to 630nm wavelength without lowering the light-emitting efficiency can be easily obtained.

公开(公告)号：JPH04269884A

公开(公告)日：1992-09-25

申请号：JP3057291

申请日：1991-02-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YURI MASAAKI ,  OTA KAZUNARI

IPC: H01S5/00

Abstract: PURPOSE:To relax the confinement of light in the transverse direction while the spread of carriers in the transverse direction is being suppressed and to realize a low threshold value and a low noise simultaneously by a method wherein, at a ridge waveguide-type semiconductor laser devide, a part which is close to a current constriction layer at a clad layer on the side of a ridge is set to a low carrier concentration. CONSTITUTION:The carrier concentration of a p-AlGaAs layer 6 is made smaller than the carrier concentration of a p-Al0.5Ga0.5As clad layer 4. Thereby, while the spread of carriers in the transverse direction is being suppressed, an n-GaAs current constriction layer 7 can be made distant from an active region. As a result, the confinement of light in the transverse direction is relaxed, and it is possible to manufacture a semiconductor laser which is resistant to a returned-light noise without increasing a threshold current.

公开(公告)号：JPH04266079A

公开(公告)日：1992-09-22

申请号：JP2731091

申请日：1991-02-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YURI MASAAKI

IPC: H01S5/00 ,  H01S5/323

Abstract: PURPOSE:To achieve a small vertical spread angle thetav which is equal to or less than 20 deg. with a high light entrapment coefficient GAMMAv in a semiconductor laser device. CONSTITUTION:Low refractive index layers 13 and 17 are provided at one portion of a region where a distance from an activation layer 15 is shorter than an oscillation wavelength within each region of a first clad layer 12 and a second clad layer 18.

公开(公告)号：JPH04179181A

公开(公告)日：1992-06-25

申请号：JP30435990

申请日：1990-11-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YURI MASAAKI ,  HIROSE MASANORI

IPC: H01S5/00

Abstract: PURPOSE:To control an etching process accurately in depth so as to form a ridge uniform in shape and excellent in reproducibility by a method wherein a depletion layer is controlled in thickness by a reverse bias voltage. CONSTITUTION:A silicon nitride film 7 is formed on a part of the surface of a semiconductor surface which serves as a ridge region, an ohmic electrode 8 covered with the silicon nitride film 7 is formed on the peripheral part of the semiconductor, and an ohmic electrode 9 is provided onto all the rear of the semiconductor. Then, a current is made to flow between the ohmic electrode 8 at a positive potential and an electrolytic solution electrode 13 at a negative potential while the surface of the semiconductor is kept in contact with an electrolytic solution 10. At this point, a reverse bias voltage is applied between the ohmic electrodes 8 and 9 by another direct current voltage power supply. By this setup, a depletion layer is formed in the interface of a P-type AlGaAs layer 5 with an AlGaAs active layer 4. Elements such as Ga, Al and as constituting the surface of the semiconductor are dissolved as positive ions into an electrolytic solution by an electric field induced between the semiconductor and the electrolytic solution, so that etching proceeds. When the surface is etched to the depletion layer, positive charge is not supplied form the inside of the semiconductor, and etching is completed.