公开(公告)号：SG101423A1

公开(公告)日：2004-01-30

申请号：SG200003946

申请日：2000-07-14

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OVERGAARD COREY DANIEL ,  RAMDANI JAMAL ,  CURLESS JAY A ,  HALLMARK JERALD A ,  OOMS WILLIAM J ,  WANG JUN

IPC: C23C14/08 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/20 ,  H01L29/20

公开(公告)号：DE69811553T2

公开(公告)日：2003-08-14

申请号：DE69811553

申请日：1998-04-15

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01L21/20 ,  H01S5/00 ,  H01S5/183 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  E21B37/00

Abstract: A VCSEL for emitting long wavelength light including a GaAs (111) substrate element (12), a first mirror stack (14) with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region (20) with an active structure (23) sandwiched between a first cladding region (24) adjacent the first mirror stack (14) and a second cladding region (25), the active structure (23) including a nitride based quantum well (35, 36, & 37), and a second mirror stack (26) lattice matched to the second cladding region (25) and having mirror pairs in a GaAs/AlGaAs material system.

公开(公告)号：DE69811553D1

公开(公告)日：2003-04-03

申请号：DE69811553

申请日：1998-04-15

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01L21/20 ,  H01S5/00 ,  H01S5/183 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  E21B37/00

Abstract: A VCSEL for emitting long wavelength light including a GaAs (111) substrate element (12), a first mirror stack (14) with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region (20) with an active structure (23) sandwiched between a first cladding region (24) adjacent the first mirror stack (14) and a second cladding region (25), the active structure (23) including a nitride based quantum well (35, 36, & 37), and a second mirror stack (26) lattice matched to the second cladding region (25) and having mirror pairs in a GaAs/AlGaAs material system.

公开(公告)号：AU2002246857A1

公开(公告)日：2002-11-25

申请号：AU2002246857

申请日：2001-12-20

Applicant: MOTOROLA INC

Inventor： DEMKOV ALEXANDER A ,  RAMDANI JAMAL ,  HILT LYNDEE L

IPC: H01L21/205 ,  C30B25/18 ,  H01L21/20 ,  H01L21/36

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

公开(公告)号：AU2002251927A1

公开(公告)日：2002-10-15

申请号：AU2002251927

申请日：2002-02-11

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  HILT LYNDEE L

IPC: C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/316 ,  H01L21/318 ,  H01L21/36 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/06 ,  C30B25/20 ,  C30B23/02 ,  H01L33/00

Abstract: High quality cubic boron nitride layers can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the nitride layer. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon wafer (102) by an amorphous interface layer of silicon oxide (108). The amorphous interface layer (108) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (104).

公开(公告)号：AU3241802A

公开(公告)日：2002-07-01

申请号：AU3241802

申请日：2001-11-19

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  HILT LYNDEE L

IPC: H01L21/205 ,  H01L21/20 ,  H01L21/36 ,  C30B25/18 ,  C30B29/52

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

公开(公告)号：AU1340102A

公开(公告)日：2002-06-11

申请号：AU1340102

申请日：2001-10-18

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  HILT LYNDEE L ,  DEMKOV ALEXANDER A

IPC: H01L21/205 ,  H01L21/20 ,  H01L21/36

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

公开(公告)号：AU8714201A

公开(公告)日：2002-04-08

申请号：AU8714201

申请日：2001-09-07

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  HILT LYNDEE ,  DROOPAD RAVINDRANATH ,  OOMS WILLIAM JAY

IPC: G02B6/12 ,  G02B6/13 ,  G02F1/03 ,  G02F1/035 ,  H01L21/20 ,  G02B6/00

Abstract: High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

公开(公告)号：AU7700101A

公开(公告)日：2002-02-05

申请号：AU7700101

申请日：2001-07-19

Applicant: MOTOROLA INC

Inventor： EL-ZEIN NADA ,  RAMDANI JAMAL ,  EISENBEISER KURT ,  DROOPAD RAVINDRANATH

IPC: H01L21/20 ,  H01L21/8258 ,  H01L27/06 ,  H01L29/88 ,  H01L29/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：AU7700001A

公开(公告)日：2002-02-05

申请号：AU7700001

申请日：2001-07-19

Applicant: MOTOROLA INC

Inventor： FINDER JEFFREY M ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  OOMS WILLIAM JAY

IPC: H01L27/20 ,  H01L41/22 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H01L21/00

Abstract: High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.