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    DRIVING DEVICE FOR SCANNING MONOLITHIC INTEGRATED LED ARRAY
    1.
    发明专利
    DRIVING DEVICE FOR SCANNING MONOLITHIC INTEGRATED LED ARRAY 失效

    公开(公告)号：JPH1063226A

    公开(公告)日：1998-03-06

    申请号：JP14853097

    申请日：1997-05-22

    Applicant: MOTOROLA INC

    Inventor： HUANG RONG-TING ,  WRIGHT PHIL ,  AKHBARI FARID ,  HALLMARK JERALD A

    IPC: G09F9/33 ,  G09G3/20 ,  G09G3/32

    Abstract: PROBLEM TO BE SOLVED: To obtain a matrix, in which the novel and improved drive of light emitting devices formed by using digital drivers is executed, by providing a driving device with a data driver and fewer I/O terminals. SOLUTION: A stationary power source 50 is included in a silicon driver integrated circuit and is connected as a power source to a column decoding circuit 12. A constant current synchronizing circuit 51 is included in the silicon driver integrated circuit and is connected as a return circuit of the electric power from a low decoding switch 15. All column decoding switches 12 have common address lines. Consequently, the columns are successively scanned by the column decoders 12 not larger than n/4 (n is the total number of the columns) at one time dependently upon the input signals from the column input selection lines. All low decoding switches 15 have common address lines. Consequently, the I/O terminals necessary for addressing LEDs of respective pixels are decreased and the electric power consumption is reduced.

    Pyroelectric device on a monocrystalline semiconductor substrate
    4.
    发明专利
    Pyroelectric device on a monocrystalline semiconductor substrate 未知

    公开(公告)号：AU2703002A

    公开(公告)日：2002-06-18

    申请号：AU2703002

    申请日：2001-11-29

    Applicant: MOTOROLA INC

    Inventor： OOMS WILLIAM J ,  FINDER JEFFREY M ,  EISENBEISER KURT W ,  HALLMARK JERALD A

    IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L27/16 ,  H01L37/02 ,  H01L21/00

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

    Single crystalline oxide on a semiconductor substrate
    6.
    发明专利
    Single crystalline oxide on a semiconductor substrate 未知

    公开(公告)号：AU2871902A

    公开(公告)日：2002-05-27

    申请号：AU2871902

    申请日：2001-10-24

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  OVERGAARD COREY DANIEL ,  DROOPAD RAVINDRANATH ,  HALLMARK JERALD A ,  OOMS WILLIAM J

    IPC: C30B23/02 ,  H01L20060101 ,  H01L21/316 ,  H01L31/18

    Abstract: A method of forming single crystalline oxides on the surface of a semiconductor substrate includes placing the semiconductor substrate (10) in a vacuum chamber and depositing a thin layer of material (12) including a II metal on the surface (11). At a minimum the layer is thick enough to passivate the surface. An alternative oxidation agent is introduced into the chamber at a partial vapor pressure and at a temperature so as to form a layer (14) of single crystal oxide from the thin layer of material with the layer of single crystal oxide lattice matched to the semiconductor substrate. The surface is monitored by reflection high energy electron diffraction (RHEED) during the oxide growth. In a preferred embodiment single crystal BaO or (Ba,Sr)O is grown on and lattice matched to a silicon substrate.

    Non-volatile memory element on a monocrystalline semiconductor substrate
    9.
    发明专利
    Non-volatile memory element on a monocrystalline semiconductor substrate 未知

    公开(公告)号：AU7355301A

    公开(公告)日：2002-02-05

    申请号：AU7355301

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FINDER JEFFREY M ,  EISENBEISER KURT ,  HALLMARK JERALD A

    IPC: H01L21/02 ,  H01L21/316 ,  H01L21/336 ,  H01L29/24 ,  H01L29/78 ,  H01L21/8246 ,  H01L27/115

    Abstract: High quality epitaxial layers (26) of compound semiconductor materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits (20) the fabrication of thin film non-volatile memory elements on a monocrystalline silicon substrate.

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