公开(公告)号：DE102005060942A1

公开(公告)日：2007-01-11

申请号：DE102005060942

申请日：2005-12-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN

IPC: G02B27/18 ,  G02B17/00 ,  G03B21/00

公开(公告)号：DE102005018336A1

公开(公告)日：2006-08-31

申请号：DE102005018336

申请日：2005-04-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN

IPC: G02B6/00 ,  G02B6/42 ,  H01L33/58 ,  H01L33/60

Abstract: The fiber has an uneven light aperture (6) and even side surfaces (4, 5), where the side surfaces are arranged directly down stream of the aperture. A large portion of the electromagnetic radiation generated by the light source enters into the fiber due to the unevenness of the aperture. An exit surface has a curvature that is e.g. spherical or elliptical. The fiber includes a dielectric material, which is made of polycarbonate.

公开(公告)号：DE102004047324A1

公开(公告)日：2006-04-13

申请号：DE102004047324

申请日：2004-09-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ENGL MORITZ ,  HUBER RAINER ,  SAILER MICHAEL ,  REILL JOACHIM ,  HOFMANN MARKUS ,  GROETSCH STEFAN ,  LANG KURT-JUERGEN ,  WANNINGER MARIO

IPC: H01L33/00 ,  F21K99/00 ,  F21S8/10 ,  H01L23/427 ,  H01L23/46

公开(公告)号：DE102004036157A1

公开(公告)日：2006-02-16

申请号：DE102004036157

申请日：2004-07-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ENGL MORITZ ,  GROETSCH STEFAN ,  KROMOTIS PATRICK ,  BOGNER GEORG

IPC: H01L33/60

Abstract: An optoelectronic component emitting electromagnetic radiation, comprising a housing body which has a cavity, the cavity being fashioned trenchlike and in the cavity a plurality of semiconductor chips being arranged in a linear arrangement. Two neighboring semiconductor chips have a distance from one another which is less than or equal to one-and-a-half lateral edge lengths of the semiconductor chips and greater than or equal to 0 μm. In addition, an illumination module comprising such a component is disclosed.

公开(公告)号：DE10324909A1

公开(公告)日：2005-01-05

申请号：DE10324909

申请日：2003-05-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KROMOTIS PATRICK ,  GROETSCH STEFAN

IPC: F21K99/00 ,  H01L25/075 ,  H01L33/60 ,  H01L33/00

Abstract: The invention proposes a housing for at least two radiation-emitting components, particularly LEDs, comprising a system carrier ( 1 ) and a reflector arrangement ( 2 ) disposed on said system carrier ( 1 ), the reflector arrangement comprising a number of reflectors each of which serves to receive at least one radiation-emitting component and which are fastened to one another by means of a holding device ( 4 ).

公开(公告)号：DE10234704A1

公开(公告)日：2004-02-19

申请号：DE10234704

申请日：2002-07-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN

IPC: H01S5/024 ,  H01L23/473 ,  H01S5/40 ,  H01S5/42 ,  B81B1/00

Abstract: Semiconductor device comprises a semiconductor component (12), especially a power laser diode billet, arranged on a cooling element (20). The cooling element contains a channel (26) for introducing a coolant and has microstructures in a region (32) for effective heat transfer to the coolant. The semiconductor component is completely overlapped by the region of the cooling channel having the microstructures and an intermediate support (16) is arranged on the cooling element so that it compensates for the different thermal expansions on the component and stresses arising on the cooling element between the component and cooling element. Preferably the intermediate support has a high elastic modulus and a high heat conductivity, preferably 1.5 times higher than copper. The component is joined to the intermediate support using a hard solder (14), preferably made from a gold-tin (AuSn) solder. The intermediate support is made from molybdenum (Mo), tungsten (W), a copper-molybdenum (CuMo) alloy or a copper-tungsten (CuW) alloy, or a diamond-metal matrix containing diamond-Cu, diamond-cobalt (Co) or diamond-aluminium (Al).

公开(公告)号：DE59808159D1

公开(公告)日：2003-06-05

申请号：DE59808159

申请日：1998-02-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN

IPC: G02B6/42 ,  H01S3/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022

Abstract: A laser device includes a component emitting laser radiation and at least one element for beam guidance or beam projection, which are disposed in a common housing. The element for beam guidance or beam projection is attached in the housing through the use of silicone.

公开(公告)号：DE59903581D1

公开(公告)日：2003-01-09

申请号：DE59903581

申请日：1999-09-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ACKLIN BRUNO ,  SPAETH WERNER ,  GROETSCH STEFAN

IPC: H01L23/28 ,  G02B6/42 ,  H01L23/473 ,  H01S5/022 ,  H01S5/024 ,  H01S5/40

Abstract: A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

公开(公告)号：AT228723T

公开(公告)日：2002-12-15

申请号：AT99953663

申请日：1999-09-01

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ACKLIN BRUNO ,  SPAETH WERNER ,  GROETSCH STEFAN

IPC: H01L23/28 ,  G02B6/42 ,  H01L23/473 ,  H01S5/022 ,  H01S5/024 ,  H01S5/40

Abstract: A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

公开(公告)号：DE10040450A1

公开(公告)日：2002-03-07

申请号：DE10040450

申请日：2000-08-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN ,  ACKLIN BRUNO

IPC: H01L21/301 ,  H01L21/48 ,  H01S5/024 ,  H01L23/36

Abstract: Cooling element comprises an electrically insulating plate-like support (1) having two main surfaces. A number of regions (2) are formed on the first main surface for receiving a semiconductor body. An Independent claim is also included for a process for the manufacture of semiconductor elements with cooling elements comprising structuring the cooling element, applying several semiconductor bodies to the cooling element and contacting the semiconductor body, and detaching the semiconductor components. Preferred Features: The regions are in the form of a matrix and are formed on the main surfaces of the support by metallic surfaces. The support is made of AlN or BN. The metallic surfaces are made of copper. The semiconductor body is a GaAs laser diode or GaAs high power laser diode.