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    ASYMMETRIC UNBALANCED ACOUSTICALLY COUPLED RESONATORS FOR SPURIOUS MODE SUPPRESSION
    43.
    发明申请
    ASYMMETRIC UNBALANCED ACOUSTICALLY COUPLED RESONATORS FOR SPURIOUS MODE SUPPRESSION 审中-公开
    不平衡不平衡联合谐振器，用于SPURIOUS模式抑制

    公开(公告)号：WO2015065585A1

    公开(公告)日：2015-05-07

    申请号：PCT/US2014/054034

    申请日：2014-09-04

    Applicant: QUALCOMM INCORPORATED

    Inventor： YUN, Changhan Hobie ,  ZUO, Chengjie ,  VELEZ, Mario Francisco ,  KIM, Daeik Daniel ,  KIM, Jonghae

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

    CPC classification number: H03H9/17 ,  H01L41/047 ,  H03H9/02157 ,  H03H9/13 ,  H03H9/56

    Abstract: A resonator (300) includes a piezoelectric core (132), a set of electrodes (104, 106, 304, 306), and at least one ground terminal (108, 308). The electrodes are arranged on the piezoelectric core (132) and also includes at least one input electrode (104, 304) having a first width and at least one output electrode having a second width (106, 306) that differs from the first width. The ground terminal (108, 308) is also on the piezoelectric core (132).

    Abstract translation: 谐振器（300）包括压电芯（132），一组电极（104,106,304,306）和至少一个接地端子（108,308）。 电极布置在压电芯（132）上，并且还包括具有第一宽度的至少一个输入电极（104,304）和具有与第一宽度不同的第二宽度（106,306）的至少一个输出电极。 接地端子（108,308）也在压电铁芯（132）上。

    RADIO FREQUENCY SWITCH FOR DIVERSITY RECEIVER
    46.
    发明申请
    RADIO FREQUENCY SWITCH FOR DIVERSITY RECEIVER 审中-公开
    无线电频率开关用于多样性接收机

    公开(公告)号：WO2013166486A1

    公开(公告)日：2013-11-07

    申请号：PCT/US2013/039681

    申请日：2013-05-06

    Applicant: QUALCOMM INCORPORATED

    Inventor： ZUO, Chengjie ,  YUN, Changhan ,  LO, Chi Shun ,  VELEZ, Mario F. ,  KIM, Jonghae

    IPC: H04B1/00 ,  H03K17/00 ,  H04B7/08

    CPC classification number: H04B7/0805 ,  H04B1/005 ,  H04B1/16 ,  H04B1/18 ,  H04B7/0825

    Abstract: A diversity receiver switch includes at least one second stage switch configured to communicate with a transceiver. The diversity receiver switch may also include at least one first stage switch coupled between a diversity receiver antenna and the second stage switch(es). The first stage switch(es) may be configured to handle a different amount of power than the second stage switch(es). The diversity receiver switch may include a bank of second stage switches configured to communicate with a transceiver. A first stage switch may be configured to handle more power than each switch in the bank of second stage switches. Alternatively, the diversity receiver switch include a bank of first stage switches coupled between the diversity receiver antenna and a second stage switch. The second stage switch may be configured to handle more power than each of the first stage switches.

    Abstract translation: 分集接收机交换机包括被配置为与收发机通信的至少一个第二级交换机。 分集接收机交换机还可以包括耦合在分集接收机天线和第二级交换机之间的至少一个第一级交换机。 第一级开关可以被配置为处理与第二级开关不同的功率量。 分集接收器开关可以包括被配置为与收发器通信的一组第二级交换机。 第一级开关可以被配置为处理比第二级开关组中的每个开关更多的功率。 或者，分集接收器开关包括耦合在分集接收器天线和第二级开关之间的一组第一级开关。 第二级开关可以被配置为处理比每个第一级开关更多的功率。

    METAL- SEMICONDUCTOR WAFER BONDING FOR HIGH-Q CAPACITORS
    47.
    发明申请
    METAL- SEMICONDUCTOR WAFER BONDING FOR HIGH-Q CAPACITORS 审中-公开
    金属半导体与高Q电容器的结合

    公开(公告)号：WO2013071178A1

    公开(公告)日：2013-05-16

    申请号：PCT/US2012/064539

    申请日：2012-11-09

    Applicant: QUALCOMM INCORPORATED

    Inventor： YUN, Changhan ,  ZUO, Chengjie ,  LO, Chi Shun ,  KIM, Jonghae ,  VELEZ, Mario F.

    IPC: H01G4/33 ,  H01L49/02 ,  H01L21/02 ,  H01L21/20

    CPC classification number: H01L29/66174 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/40 ,  H01L28/75

    Abstract: A method for metal semiconductor wafer bonding for high-Q capacitors or varactors is provided. An exemplary capacitor (210) includes a first plate (310) formed on a glass substrate (305), a second plate (330), and a dielectric layer (315). No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer can be an intrinsic semiconductor. A extrinsic semiconductor layer (325) that is heavily doped contacts the dielectric layer. The dielectric and extrinsic semiconductor layers are sandwiched between the first and second plates. An intermetallic layer is formed between the first plate and the dielectric layer. The intermetallic layer comprising an alloy of the materials of the first plate and the dielectric layer is thermo compression bonded to the first plate and the dielectric layer.

    Abstract translation: 提供了一种用于高Q电容器或变容二极管的金属半导体晶片接合的方法。 示例性电容器（210）包括形成在玻璃基板（305）上的第一板（310），第二板（330）和介电层（315）。 在第一板和玻璃基板之间不使用有机粘合剂，并且电介质层可以是本征半导体。 重掺杂的非本征半导体层（325）接触电介质层。 电介质和非本征半导体层夹在第一和第二板之间。 在第一板和电介质层之间形成金属间层。 包含第一板和电介质层的材料的合金的金属间层被热压接合到第一板和电介质层。

    LAND GRID ARRAY (LGA) PACKAGING OF PASSIVE-ON-GLASS (POG) STRUCTURE
    48.
    发明申请
    LAND GRID ARRAY (LGA) PACKAGING OF PASSIVE-ON-GLASS (POG) STRUCTURE 审中-公开
    被动式玻璃（POG）结构的LAND GRID ARRAY（LGA）包装

    公开(公告)号：WO2018031214A1

    公开(公告)日：2018-02-15

    申请号：PCT/US2017/043136

    申请日：2017-07-20

    Applicant: QUALCOMM INCORPORATED

    Inventor： ZUO, Chengjie ,  VELEZ, Mario Francisco ,  YUN, Changhan Hobie ,  BERDY, David Francis ,  KIM, Daeik Daniel ,  KIM, Jonghae

    IPC: H01L23/15 ,  H01L23/64

    Abstract: A device includes a passive-on-glass (POG) structure and an interface layer. The POG structure includes a passive component and at least one contact pad on a first surface of a glass substrate. The interface layer has a second surface on the first surface of the glass substrate such that the passive component and the at least one contact pad are located between the first surface of the glass substrate and the interface layer. The interface layer includes at least one land grid array (LGA) pad formed on a third surface of the interface layer, where the third surface of the interface layer is opposite the second surface of the interface layer. The interface layer also includes at least one via formed in the interface layer configured to electrically connect the at least one contact pad with the at least one LGA pad.

    Abstract translation: 一种器件包括玻璃上被动式（POG）结构和界面层。 POG结构包括在玻璃基板的第一表面上的无源部件和至少一个接触垫。 界面层在玻璃基板的第一表面上具有第二表面，使得无源部件和至少一个接触垫位于玻璃基板的第一表面和界面层之间。 界面层包括形成在界面层的第三表面上的至少一个岸栅阵列（LGA）焊盘，其中界面层的第三表面与界面层的第二表面相对。 界面层还包括形成在界面层中的至少一个通孔，其构造为将至少一个接触垫与至少一个LGA垫电连接。

    PACKAGE COMPRISING SWITCHES AND FILTERS
    49.
    发明申请
    PACKAGE COMPRISING SWITCHES AND FILTERS 审中-公开
    包装包含开关和过滤器

    公开(公告)号：WO2018031191A1

    公开(公告)日：2018-02-15

    申请号：PCT/US2017/042317

    申请日：2017-07-17

    Applicant: QUALCOMM INCORPORATED

    Inventor： GU, Shiqun ,  ZUO, Chengjie ,  FANELLI, Steve ,  MASARACIOGLU, Husnu Ahmet

    IPC: H01L23/31 ,  H01L21/60 ,  H01L23/538

    Abstract: A package (300) includes a redistribution portion (302), a first portion (204), and a second portion (206). The first portion is coupled to the redistribution portion. The first portion includes a first switch (241) comprising a plurality of switch interconnects (245), and a first encapsulation layer (240) that at least partially encapsulates the first switch. The second portion is coupled to the first portion. The second portion includes a first plurality of filters (261). Each filter includes a plurality of filter interconnects (265). The second portion also includes a second encapsulation layer (260) that at least partially encapsulates the first plurality of filters. The first portion includes a second switch (243) positioned next to the first switch, where the first encapsulation layer at least partially encapsulates the second switch. The second portion includes a second plurality of filters (263) positioned next to the first plurality of filters, where the second encapsulation layer at least partially encapsulates the second plurality of filters.

    Abstract translation: 包装（300）包括再分配部分（302），第一部分（204）和第二部分（206）。 第一部分连接到重新分配部分。 第一部分包括包含多个开关互连（245）的第一开关（241）以及至少部分地封装第一开关的第一封装层（240）。 第二部分连接到第一部分。 第二部分包括第一多个滤波器（261）。 每个滤波器包括多个滤波器互连（265）。 第二部分还包括至少部分地封装第一多个滤光器的第二封装层（260）。 第一部分包括位于第一开关旁边的第二开关（243），其中第一封装层至少部分地封装第二开关。 第二部分包括位于第一多个过滤器旁边的第二多个过滤器（263），其中第二包封层至少部分地包封第二多个过滤器。

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