公开(公告)号：DE69935495T2

公开(公告)日：2007-11-29

申请号：DE69935495

申请日：1999-04-29

Applicant: ST MICROELECTRONICS SRL

Inventor： BARLOCCHI GABRIELE ,  VILLA FLAVIO ,  CORONA PIETRO

IPC: H01L21/764 ,  B01L3/00 ,  B81C1/00 ,  H01L21/20

Abstract: The process comprises the steps of forming, on a monocrystalline-silicon body (11), an etching-aid region (13) of polycrystalline silicon; forming, on the etching-aid region (13), a nucleus region (17) of polycrystalline silicon, surrounded by a protective structure (26) having an opening (22') extending as far as the etching-aid region (13); TMAH-etching the etching-aid region (13) and the monocrystalline body (11), forming a tub shaped cavity (30); removing the top layer (19) of the protective structure (26); and growing an epitaxial layer (33) on the monocrystalline body (11) and the nucleus region (17). The epitaxial layer, of monocrystalline type (33a) on the monocrystalline body (11) and of polycrystalline type (33b) on the nucleus region (17), closes upwardly the etching opening (22'), and the cavity (30) is thus completely embedded in the resulting wafer (34).

公开(公告)号：DE69937106D1

公开(公告)日：2007-10-25

申请号：DE69937106

申请日：1999-07-09

Applicant: ST MICROELECTRONICS SRL

Inventor： VILLA FLAVIO ,  BARLOCCHI GABRIELE

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/20 ,  H01L21/329 ,  H01L21/763 ,  H01L27/12

公开(公告)号：DE60032113D1

公开(公告)日：2007-01-11

申请号：DE60032113

申请日：2000-02-11

Applicant: ST MICROELECTRONICS SRL

Inventor： MASTROMATTEO UBALDO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

IPC: B01L7/00 ,  A01G9/02 ,  B01J19/00 ,  B01L3/00 ,  B26D1/24 ,  B29C53/04 ,  B29C61/02 ,  B32B3/28 ,  B32B7/02 ,  B32B37/14 ,  B44C3/04 ,  B44C3/08 ,  B44C5/06 ,  B44F1/14

Abstract: The integrated device (1) for microfluid thermoregulation comprises a semiconductor material body (2) having a surface (3); a plurality of buried channels (4) extending in the semiconductor material body (2) at a distance from the surface (3) of the semiconductor material body (2); inlet and outlet ports (5a, 5b) extending from the surface (3) of the semiconductor material body (2) as far as the ends (4a, 4b) of the buried channels (4) and being in fluid connection with the buried channels; and heating elements (10) on the semiconductor material body. Temperature sensors (15) are arranged between the heating elements (10) above the surface (3) of the semiconductor material body (2).

公开(公告)号：DE69930099D1

公开(公告)日：2006-04-27

申请号：DE69930099

申请日：1999-04-09

Applicant: ST MICROELECTRONICS SRL

Inventor： BARLOCCHI GABRIELE ,  VILLA FLAVIO

IPC: H01L21/764 ,  H01L21/20 ,  H01L21/306 ,  H01L21/308 ,  H01L21/762

Abstract: The method allows formation of buried cavities in a wafer (25) of monocrystalline semiconductor material. Initially, at least one cavity (21) is formed in a substrate (10) of monocrystalline semiconductor material, by timed TMAH etching silicon, then the cavity is covered with a material inhibiting epitaxial growth (22); finally, a monocrystalline epitaxial layer (26) is grown above the substrate (10) and the cavities (21). Thereby, the cavity (21) is completely surrounded by monocrystalline material. Starting from this wafer, it is possible to form a thin membrane (52). The original wafer (25) must have a plurality of elongate cavities or channels (21), parallel and adjacent to one another. Trenches (44) are then excavated in the epitaxial layer (26), as far as the channels (21), and the dividers between the channels are removed by timed TMAH etching.

公开(公告)号：DE69828486T2

公开(公告)日：2006-04-27

申请号：DE69828486

申请日：1998-04-03

Applicant: ST MICROELECTRONICS SRL

Inventor： MONTANINI PIETRO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

IPC: H01L21/3065 ,  H01L21/762

公开(公告)号：DE69632950T2

公开(公告)日：2005-08-25

申请号：DE69632950

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FORONI MARIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01L1/18 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  G01L9/00 ,  G01P15/02 ,  G01P15/08 ,  H01L21/306 ,  H01L21/764 ,  H01L29/84 ,  H01L21/00 ,  H01L21/762