公开(公告)号：JPH11325916A

公开(公告)日：1999-11-26

申请号：JP30241798

申请日：1998-10-23

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  FORONI MARIO ,  FERRERA MARCO ,  MONTANINI PIETRO

IPC: G01C19/56 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

Abstract: PROBLEM TO BE SOLVED: To realize a vibration type integrated angular velocity sensor having high level performance and reliability at a low cost and its manufacturing method. SOLUTION: This angular velocity sensor device comprises a pair of mobile masses 2a, 2b which are formed in the epitaxial layer and are anchored to one another and to remainder of the device by anchorage elements. The mobile masses 2a, 2b are symmetrical with one another, and have mobile excitation electrodes 6a which are intercalated with respective fixed excitation electrodes 7a1 , 7a2 and mobile detection electrodes 6b which are intercalated with fixed detection electrodes 7b1 , 7b2 . The mobile and fixed excitation electrodes extend in a first direction, and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

公开(公告)号：DE69626972D1

公开(公告)日：2003-04-30

申请号：DE69626972

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  FORONI MARIO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P15/00

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.

公开(公告)号：DE69632950D1

公开(公告)日：2004-08-26

申请号：DE69632950

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FORONI MARIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01L1/18 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  G01L9/00 ,  G01P15/02 ,  G01P15/08 ,  H01L21/306 ,  H01L21/764 ,  H01L29/84 ,  H01L21/00 ,  H01L21/762

公开(公告)号：DE69626972T2

公开(公告)日：2004-01-08

申请号：DE69626972

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  FORONI MARIO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P15/00

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.

公开(公告)号：DE69632950T2

公开(公告)日：2005-08-25

申请号：DE69632950

申请日：1996-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FORONI MARIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01L1/18 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  G01L9/00 ,  G01P15/02 ,  G01P15/08 ,  H01L21/306 ,  H01L21/764 ,  H01L29/84 ,  H01L21/00 ,  H01L21/762