公开(公告)号：DE69834499T2

公开(公告)日：2007-04-19

申请号：DE69834499

申请日：1998-12-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PALMISANO GIUSEPPE ,  FERLA GIUSEPPE ,  GIRLANDO GIOVANNI

IPC: H03F1/56 ,  H03F1/22

Abstract: The amplifier stage (50) comprises a first (2) and a second (3) transistor, connected in series to each other between a first (4) and a second (5) reference potential line. The first transistor (2) has a control terminal (10), connected to an input (11) of the amplifier stage (50) through a first inductor (12), a first terminal (15), connected to the second reference potential line (5) through a second inductor (16), and a third terminal (17) connected to a first terminal of the second transistor (3). The second transistor has a second terminal (21) forming an output of the amplifier stage (50), and connected to the first reference potential line (4) through a load resistor (22). To improve the noise figure, a matching capacitor (51) is connected between the control terminal (10) and the first terminal (15) of the first transistor (2).

公开(公告)号：DE69834499D1

公开(公告)日：2006-06-14

申请号：DE69834499

申请日：1998-12-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PALMISANO GIUSEPPE ,  FERLA GIUSEPPE ,  GIRLANDO GIOVANNI

IPC: H03F1/56 ,  H03F1/22

Abstract: The amplifier stage (50) comprises a first (2) and a second (3) transistor, connected in series to each other between a first (4) and a second (5) reference potential line. The first transistor (2) has a control terminal (10), connected to an input (11) of the amplifier stage (50) through a first inductor (12), a first terminal (15), connected to the second reference potential line (5) through a second inductor (16), and a third terminal (17) connected to a first terminal of the second transistor (3). The second transistor has a second terminal (21) forming an output of the amplifier stage (50), and connected to the first reference potential line (4) through a load resistor (22). To improve the noise figure, a matching capacitor (51) is connected between the control terminal (10) and the first terminal (15) of the first transistor (2).

公开(公告)号：ITMI20042244A1

公开(公告)日：2005-02-19

申请号：ITMI20042244

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： FERLA GIUSEPPE ,  FRISINA FERRUCCIO ,  MAGRI ANGELO

公开(公告)号：DE60005541D1

公开(公告)日：2003-10-30

申请号：DE60005541

申请日：2000-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： CAMALLERI CATENO MARCO ,  LORENTI SIMONA ,  CALI DENISE ,  VASQUEZ PATRIZIA ,  FERLA GIUSEPPE

IPC: H01L21/225 ,  H01L21/331 ,  H01L29/73

公开(公告)号：ITMI20042245A1

公开(公告)日：2005-02-19

申请号：ITMI20042245

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： BAZZANO GAETANO ,  FERLA GIUSEPPE ,  FRISINA FERRUCCIO ,  GRIMALDI ANTONIO ,  MAGRI ANGELO

公开(公告)号：ITMI20042243A1

公开(公告)日：2005-02-19

申请号：ITMI20042243

申请日：2004-11-19

Applicant: ST MICROELECTRONICS SRL

Inventor： ARENA GIUSEPPE ,  CAMALLERI MARCO ,  FERLA GIUSEPPE

公开(公告)号：IT1236797B

公开(公告)日：1993-04-02

申请号：IT2242889

申请日：1989-11-17

Applicant: ST MICROELECTRONICS SRL

Inventor： FERLA GIUSEPPE ,  PALARA SERGIO

IPC: H01L21/331 ,  H01L29/73 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/082 ,  H01L29/732 ,  H01L

Abstract: The monolithic vertical-type semiconductor power device comprises an N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which there is obtained aP type insulation pocket (3). Such pocket contains N type regions (4, 15) and P type regions (8) which in turn contain N+ type regions (11, 12; 13; 14) and of P type regions (6, 7, 9, 10) which define circuit components (T1, T2, T5) of the device. Insulation pocket (3) is wholly covered by a first metallisation (21, 30) connected to ground. Such metallisation (21, 30) is in turn protected by a layer of insulating material (18) suitable for allowing the crossing of metal tracks (20) or of a second metallisation (31) for the connection of the different components.

公开(公告)号：DE602005025846D1

公开(公告)日：2011-02-24

申请号：DE602005025846

申请日：2005-11-18

Applicant: ST MICROELECTRONICS SRL

Inventor： MAGRI ANGELO ,  FRISINA FERRUCCIO ,  FERLA GIUSEPPE

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49

公开(公告)号：DE69938541D1

公开(公告)日：2008-05-29

申请号：DE69938541

申请日：1999-06-03

Applicant: ST MICROELECTRONICS SRL

Inventor： SCHILLACI ANTONINO ,  GRIMALDI ANTONIO ,  FERLA GIUSEPPE

IPC: H01L29/78 ,  H01L27/04 ,  H01L27/088 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41

公开(公告)号：DE69910736D1

公开(公告)日：2003-10-02

申请号：DE69910736

申请日：1999-06-03

Applicant: ST MICROELECTRONICS SRL

Inventor： GRIMALDI ANTONIO ,  SCHILLACI ANTONINO ,  FERLA GIUSEPPE

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41