公开(公告)号：EP0975085A1

公开(公告)日：2000-01-26

申请号：EP98830446.5

申请日：1998-07-22

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: H02N1/00 ,  G11B21/02

CPC classification number: H02N1/004 ,  G11B21/02

Abstract: An electrostatic transport structure (25) is formed by a plurality of concentric conductive regions (26a, 26b, 26c) to which biasing pulse trains (V1, V2, V3) are supplied. Each biased conductive region generates an electric field attracting any dielectric particles. The pulse trains supplied to immediately adjacent conductive regions are phase-shifted of a predetermined time and in a direction linked to the desired direction of movement for the electrostatic particles. Voltage pulses are sent to each conductive region delayed with respect to voltage pulses sent to an immediately preceding conductive region in the direction of desired movement and advanced with respect the voltage pulses sent to an immediately successive conductive region.

Abstract translation: 静电传输结构（25）由导电同心区域（26A，26B，26C），以哪个偏压脉冲串（V1，V2，V3）的供给的多个形成。 电场的每个偏压导电区基因率吸引任何介电粒子。 脉冲序列提供至立即相邻的导电区域被相移的规定的时间和在链接到运动的用于静电粒子所需的方向的方向。 电压脉冲被发送到发送到立即preceding-导电区域中移动的方向和期望的高级相对于传送到在立即连续导电区域内的电压脉冲相对于电压脉冲延迟每个导电区域。

公开(公告)号：EP0913921A1

公开(公告)日：1999-05-06

申请号：EP97830556.3

申请日：1997-10-29

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Vigna, Benedetto

IPC: H02N1/00

CPC classification number: H02N1/006

Abstract: The integrated microactuator (1) has a stator (3) and a rotor (4) having a circular extension with radial arms (23, 6) which support electrodes (24, 12) extending in a substantially circumferential direction and interleaved with one another. For the manufacture, first a sacrificial region (34) is formed on a silicon substrate (2); an epitaxial layer (37) is then grown; the circuitry electronic components (45) and the biasing conductive regions (26, 43) are formed; subsequently a portion of substrate (2) beneath the sacrificial region (34) is removed, forming an aperture extending through the entire substrate; the epitaxial layer (37) is excavated to define and separate from one another the rotor (4) and the stator (3), and finally the sacrificial region (34) is removed to release the mobile structures from the remainder of the chip.

Abstract translation: 集成的微型致动器（1）具有定子（3）和（4）具有径向臂的圆形延伸的转子（23，6），其支持电极（24，12）在基本上圆周方向和交错的存在而形成。 用于制造，第一牺牲区域（34）形成在硅衬底（2）上; 外延层（37）然后生长; 该电路的电子元件（45）和所述偏压的导电区域（26，43）被形成; 随后基片（2）所述牺牲区域（34）的下方的部分被去除，孔穿过整个基片延伸形成; 外延层（37）被挖出来定义和彼此分开的转子（4）和定子（3），最后牺牲区域（34）被去除，以从该芯片的其余部分释放移动的结构。

公开(公告)号：EP0892390A1

公开(公告)日：1999-01-20

申请号：EP97830369.1

申请日：1997-07-18

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G11B5/265 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  G11B5/55 ,  G11B5/48 ,  G11B5/596

CPC classification number: G11B5/3922 ,  G11B5/2654 ,  G11B5/3103 ,  G11B5/3183 ,  G11B5/3948 ,  G11B5/3958 ,  G11B5/4886 ,  G11B5/5526 ,  G11B5/553

Abstract: A head (130) for a disk storage device having a plurality of tracks (117) divided into memory cells (234) comprises means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) in succession, the means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) including at least two partial reading means (206a, 230a, 250a; 206b, 230b, 250b) each for reading a portion (234a; 234b) of each memory cell (234), the portions (234a; 234b) being arranged transversely relative to the longitudinal axis (233) of the corresponding track (117).

Abstract translation: 一种用于具有划分为存储单元（234）的多个磁道（117）的磁盘存储装置的磁头（130），包括用于依次读取存储单元（234）的装置（205,230a，230b，250a，250b） 用于读取包括至少两个部分读取装置（206a，230a，250a; 206b，230b，250b）的存储单元（234）的装置（205,230a，230b，250a，250b），每个部分读取装置用于读取部分（234a; 234b） 每个存储单元（234）的部分（234a; 234b）相对于对应轨道（117）的纵向轴线（233）横向布置。

公开(公告)号：EP0890998A1

公开(公告)日：1999-01-13

申请号：EP97830339.4

申请日：1997-07-07

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Villa, Flavio

IPC: H01L41/00 ,  G01L9/00

CPC classification number: G01L9/0042 ,  G01L9/0054

Abstract: The pressure sensor comprises a semiconductor material single crystal substrate (21); a semiconductor material layer (28) on the substrate (21); an air gap (55) arranged between the substrate (21) and the semiconductor material layer (28); and at least an opening (53) extending between the lower outer surface (52) of the substrate (21) and the air gap (55). The semiconductor material layer (28) is formed by a polycrystalline region (29) forming a diaphragm over the air gap (55) and by a monocrystalline region (30) elsewhere. Piezoresistive elements (46) extend over the semiconductor material layer (28), insulated therefrom by a dielectric layer (45), at a lateral delimitation edge of the diaphragm (29) and are connected one another so as to form a Wheatstone bridge the unbalancing whereof allows the pressure exerted onto the sensor to be measured.

Abstract translation: 该压力传感器包括半导体材料的单晶基板（21）; 半导体材料层（28）在基板（21）; 在基板（21）和所述半导体材料层（28）之间设置空气间隙（55）; 并且在开口（53）的（21）的下部外表面（52）之间延伸与所述气隙（55）至少基材。 半导体材料层（28）由上方形成空气间隙（55）的隔膜的多晶区域（29）和由一个单晶区域（30）的其他地方形成。 压阻元件（46）上延伸的半导体材料层（28），在隔膜（29）的横向定界边缘由介电层（45）由绝缘那里和相互连接，从而形成惠斯登电桥的不平衡 允许WHEREOF施加到传感器上的压力进行测量。

公开(公告)号：EP0890978A1

公开(公告)日：1999-01-13

申请号：EP97830345.1

申请日：1997-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Ferrera, Marco ,  Montanini, Pietro

IPC: H01L21/00 ,  G01P15/00 ,  G01C19/00

CPC classification number: H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

Abstract translation: 为了提高形成的地震质量的悬挂结构（40）具有钨芯（26），所述传感器具有高密度的敏感性。 为了制造它，氧化硅的牺牲层（21），一多晶硅层（24），钨层（26）和碳化硅层（28）被连续超过单晶硅体沉积（1）; 悬浮结构（40）通过选择性地去除碳化硅（28），钨（26）和多晶硅（24）的层所定义; 覆盖钨层（26）的未覆盖端碳化硅的间隔件（30“）被形成; 和牺牲层（21）随后被移除。