公开(公告)号：EP2943435B1

公开(公告)日：2017-02-22

申请号：EP13818156.5

申请日：2013-12-19

Applicant: Robert Bosch GmbH

Inventor： FEYH, Ando ,  CHEN, Po-jui ,  ULM, Markus

IPC: B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

Abstract: A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.

公开(公告)号：EP3095755A1

公开(公告)日：2016-11-23

申请号：EP16168459.2

申请日：2016-05-04

Applicant: Honeywell International Inc.

Inventor： REINKE, John ,  LODDEN, Grant

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

Abstract translation: 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 在第二材料中形成MEMS器件; 在所述复合衬底中的至少一个上形成至少一个温度感测元件; 和MEMS器件; 并且蚀刻所述复合衬底中的所述第一材料的所述至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个隔热玻璃弯曲件在热隔离台上热隔离。 所述至少一个温度感测元件位于以下各自中的至少一个中：热隔离级; 和MEMS器件。

公开(公告)号：EP2943435A1

公开(公告)日：2015-11-18

申请号：EP13818156.5

申请日：2013-12-19

Applicant: Robert Bosch GmbH

Inventor： FEYH, Ando ,  CHEN, Po-jui ,  ULM, Markus

IPC: B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

Abstract: A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.

Abstract translation: 半导体器件包括衬底，位于衬底上方的第一介电层，移动栅极换能器和校验块。 移动栅极换能器至少部分地形成在衬底内并且至少部分地形成在第一介电层内。 检测质量包括第一电介质层的一部分和硅层的一部分。 硅层位于第一介电层的上方。

公开(公告)号：EP3403992A1

公开(公告)日：2018-11-21

申请号：EP18161337.3

申请日：2018-03-12

Applicant: Honeywell International Inc.

Inventor： ENDEAN, Daniel ,  ROBERTS, Barry A.

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B7/0045 ,  B81B7/02 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/0019 ,  B81C1/00293 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0172 ,  B81C2203/0792

Abstract: Systems and methods for multi-sensor integrated sensor devices are provided. In one embodiment, a sensor device comprises: a substrate having a first surface and an opposing second surface; a plurality of sensor cavities recessed into the substrate; a first sensor die sealed within a first sensor cavity of the plurality of sensor cavities at a first atmospheric pressure level; a second sensor die sealed within a second sensor cavity of the plurality of sensor cavities at a second atmospheric pressure level that is a different pressure than the first atmospheric pressure level; a first plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the first sensor die; and a second plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the second sensor die.

公开(公告)号：EP3095755B1

公开(公告)日：2017-07-26

申请号：EP16168459.2

申请日：2016-05-04

Applicant: Honeywell International Inc.

Inventor： REINKE, John ,  LODDEN, Grant

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

Abstract translation: 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 以第二材料形成MEMS器件; 在至少一个复合衬底上形成至少一个温度传感元件; 和MEMS器件; 以及蚀刻掉复合衬底中的第一材料的至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个热绝缘玻璃挠曲件在热绝缘台上热隔离。 所述至少一个温度感测元件位于热隔离级中的相应的至少一个上： 和MEMS器件。

公开(公告)号：EP3180287A1

公开(公告)日：2017-06-21

申请号：EP15767206.4

申请日：2015-08-07

Applicant: Tronic's Microsystems

Inventor： BOILLOT, François-Xavier

IPC: B81B3/00 ,  G01P15/12

CPC classification number: B81B3/0094 ,  B81B2201/0228 ,  G01P15/123 ,  G01P2015/0831

Abstract: Microelectromechanical device made from a semiconductor substrate and comprising at least a main mass (1) able to move rotationally about an axis of rotation (4) parallel to the plane of the substrate under the effect of a first mechanical force applied. The device further comprises at least one mechanical detection assembly formed by: - an intermediate mass (51, 52) connected to an anchor zone (2) via mechanical connection means (61, 62) allowing the intermediate mass (51, 52) a movement parallel to the plane of the substrate under the effect of a second mechanical force applied inducing a movement of the device along an axis X parallel to the plane of the substrate and perpendicular to the axis of rotation (4); and - of a strain gauge (71, 72) secured to the main mass (1) via a first attachment point (711, 721) and secured to the intermediate mass (51, 52) via a second attachment point (712, 722), the movements of the first attachment point (711, 721) and of the second attachment point (712, 722) being in substantially identical directions with different amplitudes under the effect of the first force applied, and in substantially identical directions with substantially equal amplitudes under the effect of the second force applied.

Abstract translation: 从半导体基底和至少包括一个主块（1）能够在旋转（4）平行体系转动轴线移动大约于基板的平面中施加的第一机械力的作用下由微机电装置。 该装置还包括由形成至少一个机械检测组件： - 在通过机械连接装置（61，62）允许所述中间质量（51，52）的移动连接到锚定区（2）中间质量（51,52） 平行于第二机械力的作用下在衬底的应用诱导装置的移动沿轴线X平行于基板的平面和垂直于旋转（4）的轴线的平面; 以及 - 经由第二连接点通过一个第一连接点（711，721）固定到主块（1）和固定到所述中间质量（51，52）的应变计（71，72）的（712，722） 中，第一连接点（711，721）的运动和所述第二连接点（712，722）与所述第一力的应用的作用下不同的幅度是在基本上相同的方向，并在基本上相同的方向上具有基本上相等的幅度 下所施加的第二力的作用。

公开(公告)号：EP3109644A1

公开(公告)日：2016-12-28

申请号：EP16174671.4

申请日：2016-06-15

Applicant: Honeywell International Inc.

Inventor： HORNING, Robert D. ,  LODDEN, Grant

IPC: G01P15/093 ,  G01P21/00 ,  G01P15/08 ,  G01C19/5621 ,  G01C19/5656 ,  G01C25/00 ,  B81B5/00

CPC classification number: G01C19/5726 ,  B81B2201/0228 ,  B81B2201/04 ,  B81B2203/053 ,  G01C19/5621 ,  G01C19/5656 ,  G01C19/574 ,  G01C25/00 ,  G01P15/032 ,  G01P15/093 ,  G01P21/00 ,  G01P2015/0822 ,  G02B6/29331

Abstract: Systems and methods for a time-based optical pickoff for MEMS sensors are provided. In one embodiment, a method for an integrated waveguide time-based optical-pickoff sensor comprises: launching a light beam generated by a light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting changes in an area of overlap between the coupling port and a moving sensor component separated from the coupling port by a gap by measuring an attenuation of the light beam at the optical output port, wherein the moving sensor component is moving in-plane with respect a surface of the first substrate comprising the coupling port and the coupling port is positioned to detect movement of an edge of the moving sensor component.

Abstract translation: 提供了用于MEMS传感器的基于时间的光学拾取的系统和方法。 在一个实施例中，一种用于集成波导时基的光学检测传感器的方法包括：将由光源产生的光束发射到在第一衬底内单片制造的集成波导光学检测器，所述集成波导光学检测器包括： 光输入端口，耦合端口和光输出端口; 并且通过测量光输出端口处的光束的衰减来检测耦合端口与从耦合端口分离的移动传感器部件之间的重叠区域的变化，其中移动传感器部件正在与 相对于包括耦合端口的第一基板的表面和耦合端口被定位成检测移动的传感器部件的边缘的移动。

公开(公告)号：EP1203748A4

公开(公告)日：2005-06-01

申请号：EP00900814

申请日：2000-01-19

Applicant: MITSUBISHI ELECTRIC CORP

Inventor： YOSHIDA YUKIHISA ,  CHABLOZ MARTIAL ,  JIAO JIWEI ,  MATSUURA TSUKASA ,  TSUTSUMI KAZUHIKO

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/125 ,  G02B26/08 ,  H01L29/84

CPC classification number: G01P15/125 ,  B81B2201/0228 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00579 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10T29/49002 ,  Y10T29/49117

Abstract: A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.

公开(公告)号：WO2019139662A1

公开(公告)日：2019-07-18

申请号：PCT/US2018/057236

申请日：2018-10-24

Applicant: INVENSENSE, INC.

Inventor： THOMPSON, Matthew

IPC: G01C19/5712 ,  G01C19/5719 ,  G01C19/5733 ,  G01C19/574 ,  G01P15/125

CPC classification number: G01C19/56 ,  B81B3/0018 ,  B81B2201/0228 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5733 ,  G01C19/574 ,  G01P15/125

Abstract: A microelectromechanical (MEMS) sensor comprises MEMS components located within a MEMS layer and located relative to one or more electrodes. A plurality of proof masses are located within the MEMS layer and are not electrically coupled to each other within the MEMS layer. Both the first proof mass and the second proof mass move relative to at least a common electrode of the one or more electrodes, such that the relative position of each of the proof masses relative to the electrode may be sensed. A sensed parameter may be determined based on the sensed relative positions.

公开(公告)号：WO2016030040A1

公开(公告)日：2016-03-03

申请号：PCT/EP2015/064042

申请日：2015-06-23

Applicant: ROBERT BOSCH GMBH

Inventor： STUMBER, Michael ,  STEIN, Benedikt ,  SCHELLING, Christoph

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0086 ,  B81B2201/01 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00801

Abstract: Es wird ein Schichtmaterial vorgeschlagen, das für die Realisierung von freitragenden Strukturelementen (31) mit Elektrode (7) im Schichtaufbau eines MEMS-Bauelements (102) besonders gut geeignet ist. Erfindungsgemäß soll das freitragende Strukturelement (31) zumindest teilweise aus einer Siliziumcarbonitrid (Si 1-x-y C x N y )-basierten Schicht bestehen.

Abstract translation: 提出了一种片材，其是特别适合于悬臂的结构元件（31）与在MEMS器件（102）的层结构的电极（7）的实施。 根据本发明，自支撑的结构元件（31）以至少部分地由来自硅碳氮化物（1的Si-X-yCxNy）层为基础的。