公开(公告)号：EP2645409A4

公开(公告)日：2016-01-06

申请号：EP11843493

申请日：2011-11-18

Applicant: TANAKA PRECIOUS METAL IND

Inventor： OGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC: H01L21/60

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2201/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.

公开(公告)号：EP2700614A3

公开(公告)日：2014-09-24

申请号：EP13168373.2

申请日：2013-05-17

Applicant: Honeywell International Inc.

Inventor： Supino, Ryan ,  Lodden, Grant H.

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00182 ,  B81C1/00619 ,  B81C2201/019 ,  B81C2201/0194

Abstract: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure (704, 712) in a doped layer (708) proximate a first surface (706) of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure (116) having a first one or more sacrificial features (104) embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.

公开(公告)号：EP2700614A2

公开(公告)日：2014-02-26

申请号：EP13168373.2

申请日：2013-05-17

Applicant: Honeywell International Inc.

Inventor： Supino, Ryan ,  Lodden, Grant H.

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00182 ,  B81C1/00619 ,  B81C2201/019 ,  B81C2201/0194

Abstract: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure (704, 712) in a doped layer (708) proximate a first surface (706) of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure (116) having a first one or more sacrificial features (104) embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.

Abstract translation: 在制造MEMS结构的方法的实施例，提供。 该方法包括在一掺杂层（708）的制造工作结构（704，712）接近一个硅衬底的第一表面（706）。 所述硅衬底的所述第一表面键合到具有嵌入其中的第一一个或多个牺牲特征（104）的第一平面玻璃结构（116）。 因此，该方法包括：蚀刻以去除堆积的硅衬底，worin本体是在硅衬底的第一表面的相反，worin蚀刻除去大部分和叶接合到第一平面玻璃结构工作结构。 因此，该方法包括：蚀刻以从第一平面玻璃结构去除第一一个或多个牺牲特征。

公开(公告)号：WO2016154960A1

公开(公告)日：2016-10-06

申请号：PCT/CN2015/075650

申请日：2015-04-01

Applicant: GOERTEK.INC

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L25/16

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

Abstract translation: MEMS的传输方法，制造方法，器件和电子设备。 一种用于MEMS传输的方法，包括：在激光透明载体的第一表面上沉积激光吸收层; 在激光吸收层上形成MEMS结构; 将MEMS结构附接到接收器; 并从载体的侧面进行激光剥离，以移除载体。 可以以简单，低成本的方式实现高质量MEMS结构的转移。

公开(公告)号：WO2012148604A2

公开(公告)日：2012-11-01

申请号：PCT/US2012/030286

申请日：2012-03-23

Applicant: CLEAN ENERGY LABS, LLC ,  LACKOWSKI, William Martin ,  EVERETT, William Neil ,  PINKERTON, Joseph F.

Inventor： LACKOWSKI, William Martin ,  EVERETT, William Neil ,  PINKERTON, Joseph F.

IPC: B82B3/00

CPC classification number: B82B3/0023 ,  B81B2201/018 ,  B81B2201/036 ,  B81B2203/0109 ,  B81B2207/053 ,  B81C3/001 ,  B81C2201/019 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/051 ,  G01L9/0042 ,  H01H1/0094

Abstract: The present invention relates to thin membranes (such as graphene windows) and methods of aligned transfer of such thin membranes to substrates. The present invention further relates to devices that include such thin membranes.

Abstract translation: 本发明涉及薄膜（例如石墨烯窗）和将这种薄膜对准转移到基底的方法。 本发明还涉及包括这种薄膜的装置。

公开(公告)号：WO2012047071A2

公开(公告)日：2012-04-12

申请号：PCT/KR2011007473

申请日：2011-10-10

Applicant: KOREA ADVANCED INST SCI & TECH ,  LEE KEON JAE ,  PARK KWI IL ,  KOO MIN ,  HWANG GEON TAE

Inventor： LEE KEON JAE ,  PARK KWI IL ,  KOO MIN ,  HWANG GEON TAE

IPC: H02N2/18 ,  H01L41/312

CPC classification number: H02N2/186 ,  B81B2201/032 ,  B81C1/00357 ,  B81C2201/0194 ,  H01L41/312

Abstract: Provided are a method for manufacturing a flexible nanogenerator and a flexible nanogenerator manufactured thereby. The method for manufacturing the flexible nanogenerator of the present invention includes the steps of: laminating a piezoelectric element layer having a piezoelectric material layer on a sacrificial substrate; crystallizing the piezoelectric element layer by thermally processing the piezoelectric element layer at a high temperature; separating unit piezoelectric elements from the sacrificial substrate by removing the sacrificial substrate; and transferring the separated unit piezoelectric elements onto a flexible substrate. The method for manufacturing the flexible nanogenerator and the flexible nanogenerator manufactured thereby of the present invention can continuously produce electric power from the movement of a human body and the like by producing electric power according to the bending of the substrate.

Abstract translation: 提供了一种制造柔性纳米发电机的方法和由此制造的柔性纳米发电机。 本发明的柔性纳米发电体的制造方法包括：在牺牲基板上层叠具有压电体层的压电元件层的工序; 通过在高温下对压电元件层进行热处理来使压电元件层结晶化; 通过去除牺牲衬底将单元压电元件与牺牲衬底分离; 并将分离的单元压电元件转移到柔性基板上。 根据本发明制造的柔性纳米发电机及其制造的柔性纳米发电机的方法可以通过根据基板的弯曲产生电力而从人体的运动等连续地产生电力。

公开(公告)号：WO2011046986A2

公开(公告)日：2011-04-21

申请号：PCT/US2010/052403

申请日：2010-10-12

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  BULOVIC, Vladimir ,  PACKARD, Corinne E. ,  WOOD, Vanessa C.

Inventor： BULOVIC, Vladimir ,  PACKARD, Corinne E. ,  WOOD, Vanessa C.

IPC: G01L1/14 ,  B81C1/00

CPC classification number: G01L1/146 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C1/0046 ,  B81C2201/0194

Abstract: The disclosure is generally directed to fabrication steps, and operation principles for microelectromechanical (MEMS) transducers. In one embodiment, the disclosure relates to a texture morphing device. The texture morphing device includes: a plurality of supports arranged on a substrate to support a deformable mirror, an ITO layer; and a Distributed Bragg Reflector (DBR ) layer. A pair of adjacent supports form a cavity with the ITO layer and the deformable mirror. When the height of the cavity changes responsive to an external pressure, the internal reflection within the cavity is changed. The change in the height of the cavity causes the exterior texture to morph. Similar principles are disclosed for constructing sensor and actuators.

Abstract translation: 本公开一般涉及用于微机电（MEMS）换能器的制造步骤和操作原理。 在一个实施例中，本公开涉及纹理变形设备。 纹理变形设备包括：多个支撑件，设置在衬底上以支撑可变形镜，ITO层; 和分布式布拉格反射器（DBR）层。 一对相邻的支架与ITO层和可变形反射镜形成空腔。 当腔的高度响应于外部压力而改变时，腔内的内部反射被改变。 空腔高度的变化导致外部纹理变形。 公开了用于构建传感器和致动器的类似原理。

公开(公告)号：US09944512B2

公开(公告)日：2018-04-17

申请号：US15520618

申请日：2015-11-09

Applicant: TRONIC'S MICROSYSTEMS

Inventor： Joël Collet

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81B3/0051 ,  B81C1/00182 ,  B81C1/00333 ,  B81C2201/0194 ,  B81C2203/051 ,  G01L9/0042

Abstract: An electromechanical device includes a stack formed of an insulating layer interposed between two solid layers, and a micromechanical structure of predetermined thickness suspended above a recess of predetermined depth, the recess and the micromechanical structure forming one of the two solid layers of the stack, and the insulating layer forming the bottom of the recess.

公开(公告)号：US09929054B2

公开(公告)日：2018-03-27

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L31/18 ,  B23K26/00 ,  B23K26/08 ,  H01L31/0224 ,  H01L31/068 ,  B23K26/70 ,  B23K26/082 ,  B23K26/0622 ,  B81C1/00 ,  B42D25/00 ,  B23K26/244 ,  H01L33/00 ,  B23K101/40 ,  H01L25/065 ,  B23K103/00

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

公开(公告)号：US09783414B2

公开(公告)日：2017-10-10

申请号：US15386014

申请日：2016-12-21

Applicant: QUALCOMM INCORPORATED

Inventor： Michael A. Stuber

IPC: H01L21/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/008 ,  B81B2203/0127 ,  B81C1/00269 ,  B81C2201/0194 ,  B81C2203/037 ,  H01L21/2007 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/481 ,  H01L25/00 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2224/9202 ,  H01L2924/00

Abstract: A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.