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    SPUTTERED CONTAMINATION SHIELDING FOR AN ION SOURCE
    44.
    发明申请
    SPUTTERED CONTAMINATION SHIELDING FOR AN ION SOURCE 审中-公开
    用于离子源的溅射污染屏蔽

    公开(公告)号：WO2005020265A3

    公开(公告)日：2006-04-20

    申请号：PCT/US2004027189

    申请日：2004-08-20

    Applicant: VEECO INSTR INC ,  BURTNER DAVID MATTHEW ,  SIEGFRIED DANIEL E ,  BLACKER RICHARD ,  ALEXEYEV VALERY ,  KEEM JOHN ,  ZELENKOV VSEVOLOD ,  KRIVORUCHKO MARK

    Inventor： BURTNER DAVID MATTHEW ,  SIEGFRIED DANIEL E ,  BLACKER RICHARD ,  ALEXEYEV VALERY ,  KEEM JOHN ,  ZELENKOV VSEVOLOD ,  KRIVORUCHKO MARK

    IPC: H01J20060101 ,  G21K5/10

    CPC classification number: H01J1/00

    Abstract: Shielding (108) associated with an ion source (102), such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate (110). While passing the ion beam through to the target substrate (110), shielding (108) can reduce the total amount of sputtered contaminants impinging the substrate (110) before, during, and/or after passage of the substrate (110) through the envelope of the etching beam. Particularly, a shield configuration (108) that blocks the contaminants from impinging the substrate (110) after the substrate (100) passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate (110) with reduced substrate (110) contamination.

    Abstract translation: 与诸如阳极层源的离子源（102）相关联的屏蔽（108）减少了撞击并保留在目标衬底（110）的表面上的溅射污染物的量和/或浓度。 当通过离子束通过目标衬底（110）时，屏蔽（108）可以减少在衬底（110）穿过信封之前，期间和/或之后撞击衬底（110）的溅射污染物的总量 的蚀刻光束。 特别地，在衬底（100）通过蚀刻光束（即，蚀刻光束的外壳之外）阻挡污染物撞击衬底（110）的屏蔽配置（108）产生更高质量的衬底（110） 具有减少的基底（110）污染。

    PARTICLE SOURCE AND MANUFACTURING METHOD THEREFOR
    46.
    发明公开
    PARTICLE SOURCE AND MANUFACTURING METHOD THEREFOR 有权
    Verfahren zum Herstellen einer Teilchenquelle

    公开(公告)号：EP2575158A1

    公开(公告)日：2013-04-03

    申请号：EP12798587.7

    申请日：2012-06-13

    Applicant: 38th Research Institute, China Electronics Technology Group Corporation

    Inventor： LIU, Huarong

    IPC: H01J37/04

    CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the apex of the metal wire head to be greater than the evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base, wherein the FICE occurs at the lateral side of the metal wire head to form the base, and the field evaporation occurs at the apex of the metal wire head to form the tip; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开内容提供了一种制造颗粒源的方法，包括：将金属线放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面处产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶点处的表面电场，使其大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状，其中FICE出现在侧面 金属丝头的一侧形成基部，并且在金属丝头的顶点处发生场蒸发以形成尖端; 并且当金属丝的头部具有预定的形状时，停止FICE和场蒸发。

    무선통신시스템에서 부채널 구성 장치 및 방법
    49.
    发明公开
    무선통신시스템에서 부채널 구성 장치 및 방법 无效
    无线通信系统中子信道的装置和方法

    公开(公告)号：KR1020100004034A

    公开(公告)日：2010-01-12

    申请号：KR1020080068302

    申请日：2008-07-14

    Applicant: 삼성전자주식회사

    Inventor： 박정호 ,  유화선 ,  강희원 ,  최호규 ,  김태영 ,  조재희 ,  조재원

    IPC: H04J1/00 ,  H04L27/26 ,  H04L29/02 ,  H04B7/26

    CPC classification number: H01J1/00 ,  H04L5/0023 ,  H04W16/02

    Abstract: PURPOSE: An apparatus and method for subchanneling in wireless communication system are provided to be used without the usage limit or the performance deterioration. CONSTITUTION: The controller(920) confirms the FFR rate. In consideration of the FFR rate, the subchannel configuration part(921) assigns sequentially the resources for the resources for the domain in which the frequency reuse factor is N and the frequency reuse factor is the band selection subchannel of one person domain and the resources for the diversity subchannel.

    Abstract translation: 目的：提供无线通信系统中子信道的设备和方法，无需使用限制或性能下降。 规定：控制器（920）确认FFR速率。 考虑到FFR速率，子信道配置部分（921）依次分配用于频域重用因子为N的域的资源的资源，频率重用因子是一个人域的频带选择子信道， 多样性子通道。

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