METHOD FOR FABRICATING FIELD EMISSION CATHODE, FIELD EMISSION CATHODE THEREOF, AND FIELD EMISSION LIGHTING SOURCE USING THE SAME
    41.
    发明申请
    METHOD FOR FABRICATING FIELD EMISSION CATHODE, FIELD EMISSION CATHODE THEREOF, AND FIELD EMISSION LIGHTING SOURCE USING THE SAME 有权
    用于制造场发射阴极的方法,其场发射阴极及其场发射照明源

    公开(公告)号:US20140055027A1

    公开(公告)日:2014-02-27

    申请号:US13847884

    申请日:2013-03-20

    Abstract: A method for fabricating field emission cathode, a field emission cathode, and a field emission lighting source are provided. The method includes: forming a catalyst crystallite nucleus layer on the surface of cathode substrate by self-assembly of a noble metal catalyst, growing a composited nano carbon material on the cathode substrate by using a TCVD process, in which the composited nano carbon material includes coil carbon nano tubes and coil carbon nano fibers. The measured quantity of total coil carbon nano tubes and coil carbon nano fibers is higher than 40%. The field emission cathode is fabricated by the aforementioned method, and the field emission lighting source includes the aforementioned field emission cathode.

    Abstract translation: 提供一种用于制造场发射阴极,场致发射阴极和场致发射光源的方法。 该方法包括:通过贵金属催化剂的自组装在阴极基板的表面上形成催化剂微晶核层,通过使用TCVD工艺在复合纳米碳材料上生长复合纳米碳材料,其中复合纳米碳材料包括 线圈碳纳米管和线圈碳纳米纤维。 总线圈碳纳米管和线圈碳纳米纤维的测量量高于40%。 通过上述方法制造场致发射阴极,场发射光源包括上述场发射阴极。

    METHOD FOR FABRICATING PATTERNED SILICON NANOWIRE ARRAY AND SILICON MICROSTRUCTURE
    42.
    发明申请
    METHOD FOR FABRICATING PATTERNED SILICON NANOWIRE ARRAY AND SILICON MICROSTRUCTURE 审中-公开
    用于制作图案硅纳米阵列和硅微结构的方法

    公开(公告)号:US20140030873A1

    公开(公告)日:2014-01-30

    申请号:US13680301

    申请日:2012-11-19

    Abstract: A method for fabricating a patterned silicon nanowire array is disclosed. The method includes: forming a patterned protective layer on silicon nanowire array structures, forming a patterned protective layer on the array of silicon nanowire structures, the patterned protective layer defining a covered region and a uncovered region on the array of silicon nanowire structures; using a selective etching to remove the array of silicon nanowire structures defined on the uncovered region; and removing the patterned protective layer remained on the array of silicon nanowire structures. A method for fabricating a silicon microstructure is also disclosed.

    Abstract translation: 公开了一种制造图案化硅纳米线阵列的方法。 该方法包括:在硅纳米线阵列结构上形成图案化的保护层,在硅纳米线结构阵列上形成图案化保护层,图案化保护层限定硅纳米线结构阵列上的覆盖区域和未覆盖区域; 使用选择性蚀刻去除限定在未覆盖区域上的硅纳米线结构阵列; 并且去除图案化的保护层留在硅纳米线结构的阵列上。 还公开了一种用于制造硅微结构的方法。

    Method for surface treating cold cathode
    43.
    发明授权
    Method for surface treating cold cathode 有权
    冷阴极表面处理方法

    公开(公告)号:US08431181B2

    公开(公告)日:2013-04-30

    申请号:US12650817

    申请日:2009-12-31

    CPC classification number: H01J9/025 H01J2201/3043 H01J2201/30434

    Abstract: A method for surface treating a cold cathode includes the following steps. A cold cathode is provided and the cold cathode includes a plurality of field emitters. A liquid glue is placed on a surface of the cold cathode. The liquid glue is cured to form solid glue on the surface of the cold cathode. The solid glue is removed to allow the plurality of field emitters to stand upright.

    Abstract translation: 一种用于表面处理冷阴极的方法包括以下步骤。 设置冷阴极,冷阴极包括多个场致发射体。 将液体胶放置在冷阴极的表面上。 液态胶固化,在冷阴极表面形成固体胶。 去除固体胶以允许多个场发射器直立。

    METHOD FOR SURFACE TREATING COLD CATHODE
    45.
    发明申请
    METHOD FOR SURFACE TREATING COLD CATHODE 有权
    表面处理冷阴极的方法

    公开(公告)号:US20110059671A1

    公开(公告)日:2011-03-10

    申请号:US12650817

    申请日:2009-12-31

    CPC classification number: H01J9/025 H01J2201/3043 H01J2201/30434

    Abstract: A method for surface treating a cold cathode includes the following steps. A cold cathode is provided and the cold cathode includes a plurality of field emitters. A liquid glue is placed on a surface of the cold cathode. The liquid glue is cured to form solid glue on the surface of the cold cathode. The solid glue is removed to allow the plurality of field emitters to stand upright.

    Abstract translation: 一种用于表面处理冷阴极的方法包括以下步骤。 设置冷阴极,冷阴极包括多个场致发射体。 将液体胶放置在冷阴极的表面上。 液态胶固化,在冷阴极表面形成固体胶。 去除固体胶以允许多个场发射器直立。

    FIELD EMISSION ELECTRON GUN AND ELECTRON BEAM APPLIED DEVICE USING THE SAME
    47.
    发明申请
    FIELD EMISSION ELECTRON GUN AND ELECTRON BEAM APPLIED DEVICE USING THE SAME 有权
    现场发射电子枪和使用该电子枪的电子束应用装置

    公开(公告)号:US20080029700A1

    公开(公告)日:2008-02-07

    申请号:US11831989

    申请日:2007-08-01

    Abstract: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

    Abstract translation: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外,还要获得能量扩散比电子枪窄的电子束。 此外,还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于,在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料,用于场发射电子的提取器和用于加速电子的加速器。 此外,还将场致发射电子枪应用于各种电子束施加装置。

    METHOD FOR MANUFACTURING A FIELD EMITTER ELECTRODE USING THE ARRAY OF NANOWIRES
    50.
    发明申请
    METHOD FOR MANUFACTURING A FIELD EMITTER ELECTRODE USING THE ARRAY OF NANOWIRES 审中-公开
    使用纳米阵列制造场致发射体电极的方法

    公开(公告)号:WO2008018701A1

    公开(公告)日:2008-02-14

    申请号:PCT/KR2007/003572

    申请日:2007-07-25

    Abstract: The present invention relates to a method for manufacturing a field emitter electrode, in which nanowires are aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field. More particularly, the present invention relates to a method for manufacturing a field emitter electrode having nanowires aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field, the method comprising the steps of diluting nanowires in a solvent, dispersing the resulting solution on a substrate fixed to the upper part of an electromagnetic field generator, and fixing the nanowires aligned in the direction of an electromagnetic field generated from the electromagnetic field generator. According to the present invention, a high capacity field emitter electrode having high density nanowires aligned according to the direction of a generated electromagnetic field can be fabricated by a simple process and nanowires can be used as positive electrode materials for field emission displays (FEDs), sensors, electrodes, backlights and the like.

    Abstract translation: 本发明涉及一种用于制造场致发射电极的方法,其中纳米线根据所产生的电磁场的方向垂直或垂直或以水平和垂直之间的任意角度水平排列。 更具体地说,本发明涉及一种制造场致发射电极的方法,该场致发射电极具有根据产生的电磁场方向的水平方向,垂直方向或水平方向和垂直方向之间的任意角度排列的纳米线,该方法包括以下步骤: 溶剂,将得到的溶液分散在固定于电磁场发生器上部的基板上,并固定沿电磁场发生器产生的电磁场方向排列的纳米线。 根据本发明,可以通过简单的工艺制造具有根据产生的电磁场方向排列的高密度纳米线的高容量场致发射极,并且可以使用纳米线作为场发射显示器(FED)的正极材料, 传感器,电极,背光灯等。

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